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Infineon Technologies BF1005SE6433XT
- Part No.:
- BF1005SE6433XT
- Manufacturer:
- Infineon Technologies
- Category:
- Single FETs, MOSFETs
- Package:
- TO-253-4, TO-253AA
- Datasheet:
-
BF1005SE6433XT.pdf
- Description:
- RF MOSFET 5V SOT143
- Quantity:
- Payment:
- Shipping:
Inventory:8,003
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Product details
Overview
BF1005SE6433XT from Infineon Technologies is a silicon N-channel tetrode MOSFET designed for low-noise, high-gain RF input stages up to 1 GHz. It features integrated biasing (VG2S = 4 V self-bias), 5 V operating voltage, 22 dB typical power gain at 800 MHz, 1.6–2.1 dB noise figure, and RoHS-compliant SOT143 package. Used in UHF LNA front-ends for automotive keyless entry receivers.
For engineers reviewing the BF1005SE6433XT datasheet, BF1005SE6433XT pinout, BF1005SE6433XT application, or BF1005SE6433XT equivalent, key selection criteria include verified 800 MHz small-signal gain (20–22 dB), gate-controlled gain range (40–50 dB), thermal resistance ≤370 K/W, and AEC-Q101 qualification for automotive RF signal conditioning.
Technical Context
This tetrode MOSFET employs dual-gate architecture with Gate 1 (RF input) and Gate 2 (gain control/bias) enabling independent signal injection and transconductance tuning. Its 2.4 pF typical Cg1ss and 1.3 pF Cdss support stable broadband matching up to 1 GHz while maintaining low noise performance under 5 V operation.
The device operates in self-biased mode (IDSO = 8–16 mA at VG2S = 4 V) with pinch-off voltage VG2S(p) = −1 V, allowing precise DC bias setting without external resistors. ESD sensitivity (HBM Class 1B) mandates handling per JEDEC JS-001.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Operating Frequency | Up to 1 GHz - validated for UHF receiver input stages including 315/433 MHz keyless entry and TPMS. |
| Power Gain (Gp) | 20–22 dB at 800 MHz - enables single-stage amplification without cascading, reducing board area and insertion loss. |
| Noise Figure (F) | 1.6–2.1 dB at 800 MHz - meets stringent SNR requirements for weak-signal automotive remote reception. |
| Gain Control Range (∆Gp) | 40–50 dB - supports AGC implementation via VG2S sweep from 0 to 4 V for dynamic range management. |
| Drain Current (IDSO) | 8–16 mA at VG2S = 4 V - defines quiescent operating point for thermal stability in compact SOT143 packages. |
| Thermal Resistance (Rthchs) | ≤370 K/W - limits junction-to-solder-point temperature rise to <10°C at 200 mW dissipation, critical for sealed RF modules. |
| AEC-Q101 Qualification | Qualified per AEC-Q101 Grade 2 - ensures reliability for automotive under-hood and body-control RF applications. |
Pinout & Package
SOT143 package: 4-pin plastic surface-mount, 1.3 mm × 1.7 mm footprint, 0.95 mm height, lead-free terminations, tape-and-reel packaging (3,000 pcs/reel, ø180 mm).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (S) | Source | Common reference node for both gates and drain; tied to ground plane for RF stability and thermal conduction. |
| 2 (D) | Drain | RF output node; requires 50 Ω matching network and DC blocking before downstream mixer or IF stage. |
| 3 (G2) | Gate 2 (Bias/Control) | DC bias input controlling IDSO and transconductance; 0–4 V sweep enables analog gain control without external FETs. |
| 4 (G1) | Gate 1 (RF Input) | High-impedance RF signal input; 2.4 pF Cg1ss necessitates careful microstrip layout to avoid resonance above 1 GHz. |
Key Features
| Feature | Design Value |
|---|---|
| Dual-gate tetrode architecture | Enables simultaneous RF signal injection (G1) and gain/bias control (G2), eliminating need for external bias networks in LNAs. |
| Integrated self-biasing | Operates at IDSO = 8–16 mA with VG2S = 4 V only - reduces component count and PCB area in space-constrained RF modules. |
| Low-noise RF performance | 1.6–2.1 dB NF at 800 MHz allows detection of sub-µV signals in automotive key fob receivers with >60 dB dynamic range. |
| AEC-Q101 Grade 2 qualification | Validated for −40°C to +125°C operation and mechanical shock/vibration - suitable for body electronics mounting near doors or trunks. |
| ESD-protected structure | HBM Class 1B (≥2 kV) - withstands assembly handling and in-system ESD events common in vehicle manufacturing environments. |
Applications
| Automotive Keyless Entry Receiver | TPMS Sensor Front-End |
|---|---|
Use Scenario: 315 MHz or 433 MHz RF signal amplification in passive entry/ignition (PEPS) control units. IC Role / Device Role / Timing Role: Low-noise amplifier (LNA) stage directly following antenna matching network and before mixer. Use Value: 22 dB gain and 1.6 dB NF enable reliable detection of weak key fob signals at >10 m distance, even with metal shielding. | Use Scenario: Amplifying low-amplitude pressure/temperature sensor telemetry bursts transmitted at 433 MHz from tire valve stems. IC Role / Device Role / Timing Role: First active gain stage in ultra-low-power TPMS receiver IC subsystem. Use Value: Self-biased 13 mA IDSO minimizes standby current while delivering sufficient gain for short-duration burst detection. |
| Remote Keyless Go (RKE) Module | UHF RFID Reader Front-End |
Use Scenario: Bidirectional 315/433 MHz communication between vehicle and smart key during approach authentication. IC Role / Device Role / Timing Role: Receive-path LNA with AGC capability via VG2S control voltage. Use Value: 40–50 dB gain control range accommodates varying signal strengths from near-field (<0.5 m) to far-field (>5 m) key positions. | Use Scenario: Signal conditioning in handheld or fixed UHF RFID readers operating at 860–960 MHz. IC Role / Device Role / Timing Role: High-linearity, low-noise preamplifier for tag response demodulation. Use Value: 30 mS typ. gfs and stable 2.4 pF Cg1ss support wideband impedance matching across global UHF bands without retuning. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-gate RF amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BFP181 | Single-gate LNA; higher NF (2.5 dB), no VG2S gain control; SOT143 package. | Lacks analog AGC capability; suited only for fixed-gain architectures. | Select when system-level gain control is implemented digitally post-LNA. |
| NE85633 | Discrete dual-gate MOSFET; higher IDSS (1.2 mA), lower gfs (18 mS); TO-92 package. | Through-hole mounting; unsuitable for automated SMT production or high-frequency layout. | Choose only for prototyping or legacy through-hole designs below 500 MHz. |
Compared with BFP181 and NE85633, BF1005SE6433XT uniquely delivers integrated gain control, AEC-Q101 qualification, and optimized 800 MHz noise/gain trade-off - making it the only qualified SMT solution for production automotive UHF receivers requiring analog AGC.
Availability
BF1005SE6433XT is available at Aetrix Electronics and suitable for automotive keyless entry systems, TPMS receivers, and UHF RFID reader front-ends requiring stable component supply, AEC-Q101 compliance, and repeatable RF performance across temperature.
Supply support for BF1005SE6433XT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and RF solutions, with headquarters in Munich and global R&D and manufacturing facilities.
BF1005SE6433XT belongs to Infineon's RF transistor product line, engineered specifically for high-reliability, low-noise UHF amplification in automotive wireless access systems.
FAQ
What is the maximum recommended drain-source voltage for continuous operation?
The absolute maximum VDS is 8 V, but the device is characterized and intended for 5 V operation in RF amplifier applications. Exceeding 5 V may degrade noise figure and gain linearity without improving RF output power, and risks exceeding the 200 mW total power dissipation limit at ambient temperatures above 76 °C.
Can Gate 1 be used for DC biasing instead of Gate 2?
No - Gate 1 is optimized for RF signal injection and has higher input capacitance and lower breakdown rating (+V(BR)G1SS = 8–12 V). The datasheet explicitly warns against applying external DC voltage to Gate 1 in active mode, as it compromises noise performance and risks gate oxide damage. Gate 2 is the designated bias/control terminal.
Is the BF1005SE6433XT pin-compatible with the BF1005SR variant?
No - BF1005SE6433XT uses SOT143 with pinout 1=S, 2=D, 3=G2, 4=G1, while BF1005SR uses SOT143R with reversed pinout (1=S, 2=D, 3=G1, 4=G2). Layouts are not interchangeable; using the wrong variant causes functional failure due to swapped gate connections.
Does this part require external ESD protection in circuit design?
While the device incorporates on-chip ESD protection rated to HBM Class 1B (≥2 kV), Infineon recommends adding discrete 0402-size TVS diodes (e.g., NUP4105) at the G1 and D pins in automotive environments where cable discharge events exceed 8 kV. This ensures robustness against ISO 10605-2008 test conditions.
BF1005SE6433XT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- TO-253-4, TO-253AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N-Channel
- Frequency:
- 800MHz
- Gain:
- 22dB
- Voltage - Test:
- 5 V
- Current Rating (Amps):
- 25mA
- Noise Figure:
- 1.6dB
- Current - Test:
- -
- Power - Output:
- -
- Voltage - Rated:
- 8 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT-143-3D
BF1005SE6433XT FAQ
1.How can I place an order for BF1005SE6433XT through Aetrix?
Please submit a Request for Quotation (RFQ) for BF1005SE6433XT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BF1005SE6433XT reliable?
The price and inventory of BF1005SE6433XT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BF1005SE6433XT is usually 5 days.
3.What payment methods are accepted for BF1005SE6433XT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BF1005SE6433XT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BF1005SE6433XT?
BF1005SE6433XT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BF1005SE6433XT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BF1005SE6433XT?
For technical support, including BF1005SE6433XT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BF1005SE6433XT requirements.
6.How does Aetrix verify that BF1005SE6433XT is sourced from the original manufacturer or authorized distributors?
All BF1005SE6433XT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BF1005SE6433XT meets industry standards.
7.What is the process for return or replacement of BF1005SE6433XT?
All BF1005SE6433XT units undergo pre-shipment inspection (PSI). If there is an issue with BF1005SE6433XT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BF1005SE6433XT part is unused and in its original packaging.
Return procedure for BF1005SE6433XT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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