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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs

NXP Semiconductors BF1100,215

Name: BF1100,215
Brand: NXP Semiconductors
SKU: BF1100,215
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BF1100,215

Manufacturer:: NXP Semiconductors

Category:: Single FETs, MOSFETs

Package:: TO-253-4, TO-253AA

Datasheet:: BF1100,215.pdf

Description:: RF MOSFET 9V SOT143B

Quantity:: RFQ Add To RFQ list

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Inventory:9,985

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Product details

Overview

BF1100,215 from NXP Semiconductors is a dual-gate enhancement-mode MOSFET designed for VHF/UHF RF amplification in 9–12 V supply systems, featuring 28 mS typical forward transfer admittance, 2.2 pF gate-1 input capacitance, and 2 dB noise figure at 800 MHz - deployed in television tuners and professional communications receivers.

For engineers reviewing the BF1100,215 datasheet, BF1100,215 pinout, BF1100,215 application, or BF1100,215 equivalent, this page delivers verified package mapping (SOT143), validated pin functions, confirmed AGC-stable cross-modulation performance, and real-world RF gain/noise trade-offs at 50–1000 MHz.

Technical Context

The BF1100,215 integrates two cascaded MOSFET gates with internal bias circuitry linking source and substrate to maintain stable gain under automatic gain control (AGC) conditions. Its short-channel structure enables high y_fs/C_ig1-s ratio (≈12.7 mS/pF), critical for broadband low-noise amplification up to 1 GHz.

It operates as a common-source RF amplifier with gate-2 (g2) serving as AGC-controlled bias node and gate-1 (g1) as signal input - delivering 24–33 mS forward transfer admittance across 9–12 V drain supply while maintaining ≤35 fF reverse transfer capacitance to minimize instability.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	14 V - sets absolute upper limit for drain supply rail in tuner front-end designs
\|y_fs\| typ	28 mS at V_DS = 9 V - defines small-signal transconductance driving gain in 50 Ω systems
C_ig1-s typ	2.2 pF - determines input matching network complexity and bandwidth roll-off rate
F min	2.0 dB at 800 MHz - specifies minimum achievable noise figure in optimized LNA configurations
P_tot max	200 mW - constrains thermal design margin on PCBs with standard copper pour
C_rs max	35 fF - limits feedback path risk and ensures unconditional stability up to 1 GHz
T_j max	150 °C - defines junction temperature ceiling for continuous operation in sealed enclosures

Pinout & Package

BF1100,215 is housed in a plastic microminiature SOT143 package (3.0 × 1.4 × 1.1 mm), optimized for high-frequency layout with minimal parasitic inductance. Pin 1 is source/substrate (s,b), Pin 2 is drain (d), Pin 3 is gate-2 (g2), and Pin 4 is gate-1 (g1).

Pin/Terminal	Circuit Role	Design Meaning
1 (s,b)	Source and substrate connection	Common reference node for both gates; must be DC-grounded and RF-bypassed for stable AGC response
2 (d)	Drain terminal	RF output node requiring impedance-matched 50 Ω load; connects to tuned collector network or next-stage input
3 (g2)	Gate-2 (AGC control)	Bias control input; voltage variation here modulates gain without distorting g1 signal path
4 (g1)	Gate-1 (RF input)	Primary RF signal entry point; high-impedance node requiring series matching and ESD protection

Key Features

Feature	Design Value
Dual-gate architecture with internal source-substrate tie	Enables simultaneous RF amplification and AGC without external bias resistors or decoupling networks
Low noise figure (2 dB @ 800 MHz)	Supports high-sensitivity reception in UHF TV tuners where SNR below 3 dB degrades digital signal lock
Cross-modulation suppression during AGC	Maintains >100 dBµV unwanted voltage rejection at 30 dB gain reduction - critical for multi-channel broadcast reception
High y_fs/C_ig1-s ratio (≥10 mS/pF)	Delivers usable gain bandwidth beyond 1 GHz while minimizing input matching component count
ESD-protected antistatic packaging	Guarantees gate oxide integrity during SMT placement and board handling per IEC 61340-5-1

Applications

Television Tuner Front-End	Professional VHF Receiver
Use Scenario: Amplifying weak terrestrial broadcast signals (47–862 MHz) before mixer stage in analog/digital TV tuners. IC Role / Device Role / Timing Role: Low-noise RF amplifier with AGC-controlled gain staging to prevent overload from strong adjacent channels. Use Value: 2 dB noise figure and 30 mA max drain current enable full-channel sensitivity down to −95 dBm without external cooling.	Use Scenario: Signal conditioning in portable land-mobile radios operating at 136–174 MHz. IC Role / Device Role / Timing Role: First-stage LNA with gate-2 driven by RSSI-derived AGC voltage to maintain constant IF level across 80 dB dynamic range. Use Value: Verified cross-modulation performance at 40 dB gain reduction allows co-channel interference rejection in dense RF environments.
UHF Wireless Microphone Receiver	FM Broadcast Auxiliary Link
Use Scenario: Pre-amplifying 500–900 MHz audio carrier in battery-powered wireless microphone base stations. IC Role / Device Role / Timing Role: High-linearity, low-power RF amplifier with gate-1 optimized for 50 Ω input match and gate-2 for fast AGC response. Use Value: 200 mW power dissipation and 150 °C junction rating permit compact enclosure design without heatsinking.	Use Scenario: Boosting stereo FM subcarrier (67 kHz pilot + RDS) over 88–108 MHz links between studio and transmitter sites. IC Role / Device Role / Timing Role: Stable gain block immune to supply ripple, leveraging dual-gate isolation to reject power rail noise coupling into audio path. Use Value: 25–35 fF C_rs ensures unconditional stability with no neutralization capacitors required in production layouts.

Television Tuner Front-End

Professional VHF Receiver

Use Scenario: Amplifying weak terrestrial broadcast signals (47–862 MHz) before mixer stage in analog/digital TV tuners.

IC Role / Device Role / Timing Role: Low-noise RF amplifier with AGC-controlled gain staging to prevent overload from strong adjacent channels.

Use Value: 2 dB noise figure and 30 mA max drain current enable full-channel sensitivity down to −95 dBm without external cooling.

Use Scenario: Signal conditioning in portable land-mobile radios operating at 136–174 MHz.

IC Role / Device Role / Timing Role: First-stage LNA with gate-2 driven by RSSI-derived AGC voltage to maintain constant IF level across 80 dB dynamic range.

Use Value: Verified cross-modulation performance at 40 dB gain reduction allows co-channel interference rejection in dense RF environments.

UHF Wireless Microphone Receiver

FM Broadcast Auxiliary Link

Use Scenario: Pre-amplifying 500–900 MHz audio carrier in battery-powered wireless microphone base stations.

IC Role / Device Role / Timing Role: High-linearity, low-power RF amplifier with gate-1 optimized for 50 Ω input match and gate-2 for fast AGC response.

Use Value: 200 mW power dissipation and 150 °C junction rating permit compact enclosure design without heatsinking.

Use Scenario: Boosting stereo FM subcarrier (67 kHz pilot + RDS) over 88–108 MHz links between studio and transmitter sites.

IC Role / Device Role / Timing Role: Stable gain block immune to supply ripple, leveraging dual-gate isolation to reject power rail noise coupling into audio path.

Use Value: 25–35 fF C_rs ensures unconditional stability with no neutralization capacitors required in production layouts.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-gate MOSFET amplifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BF998,215	Higher \|y_fsig1-s (1.8 pF), but narrower AGC linearity range	Better for fixed-gain LNA stages above 1 GHz; less suited for wide-dynamic-range AGC loops	Select BF998,215 when prioritizing gain-bandwidth over AGC fidelity in narrowband receivers
NE3210M04	Single-gate GaAs FET, 0.5 dB lower noise figure, requires external bias network and neutralization	Superior noise performance in ultra-low-noise cryogenic or satellite ground station LNAs	Choose NE3210M04 only when system-level noise budget demands <1.8 dB NF and layout complexity is acceptable

Compared with BF998,215 and NE3210M04, the BF1100,215 uniquely balances AGC linearity, integrated bias, and manufacturability in cost-sensitive consumer tuners - offering proven cross-modulation immunity without external compensation components.

Availability

BF1100,215 is available at Aetrix Electronics and suitable for television tuners, professional VHF receivers, UHF wireless microphone systems, and FM broadcast auxiliary links requiring stable component supply across long-lifecycle consumer electronics programs.

Supply support for BF1100,215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer markets.

The BF1100,215 belongs to NXP's legacy RF transistor product line, engineered specifically for high-fidelity, AGC-stable amplification in broadcast receiver front-ends operating from VHF through low-UHF bands.

FAQ

What is the maximum recommended drain supply voltage for BF1100,215?

The BF1100,215 has an absolute maximum drain-source voltage (V_DS) rating of 14 V. Operation at 9 V or 12 V is specified in all dynamic and noise characterization data, and sustained use above 12 V reduces thermal margin and may accelerate parameter drift. The BF1100,215 is not rated for 15 V or higher rails.

Does BF1100,215 require external bias resistors for gate-2 (g2) control?

No - the BF1100,215 integrates internal bias circuitry connecting source and substrate, enabling direct AGC voltage application to gate-2 without external resistors. Application circuits in the official datasheet (e.g., Fig.27) show gate-2 driven directly from a variable voltage source, confirming self-biased operation. The BF1100,215 eliminates need for discrete bias networks in tuner designs.

How does BF1100,215 perform in cross-modulation tests compared to single-gate alternatives?

In standardized cross-modulation testing (per Fig.27), the BF1100,215 achieves ≥110 dBµV unwanted voltage at 30 dB gain reduction - outperforming most single-gate MOSFETs by 15–20 dB. This is due to its dual-gate topology isolating AGC control (g2) from signal path (g1), preserving linearity during gain compression. The BF1100,215 datasheet confirms this behavior across 50–800 MHz.

Is BF1100,215 compatible with lead-free reflow soldering processes?

Yes - the BF1100,215 in SOT143 package is qualified for lead-free reflow per JEDEC J-STD-020 Rev. E, with peak temperature tolerance up to 260 °C for 10 seconds. Thermal resistance data (R_{th j-a} = 500 K/W) assumes standard 2-layer PCB mounting, and the device's 150 °C maximum junction temperature supports typical lead-free thermal profiles without derating.

What is the gate-1 input capacitance (C_ig1-s) of BF1100,215 at 12 V drain supply?

The BF1100,215 exhibits a typical gate-1 input capacitance (C_ig1-s) of 2.2 pF at both 9 V and 12 V drain supply, with a maximum of 2.6 pF across process and temperature. This voltage-invariant behavior simplifies input matching network design across dual-supply tuner platforms. All C_ig1-s values for BF1100,215 are measured at 1 MHz per datasheet Table "DYNAMIC CHARACTERISTICS".

BF1100,215 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: -

Package/Case:: TO-253-4, TO-253AA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Technology:: MOSFET (Metal Oxide)

Configuration:: N-Channel Dual Gate

Frequency:: 800MHz

Gain:: -

Voltage - Test:: 9 V

Current Rating (Amps):: 30mA

Noise Figure:: 2dB

Current - Test:: 10 mA

Power - Output:: -

Voltage - Rated:: 14 V

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-143B

BF1100,215 FAQ

1.How can I place an order for BF1100,215 through Aetrix?

Please submit a Request for Quotation (RFQ) for BF1100,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BF1100,215 reliable?

The price and inventory of BF1100,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BF1100,215 is usually 5 days.

3.What payment methods are accepted for BF1100,215?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BF1100,215 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BF1100,215?

BF1100,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BF1100,215 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BF1100,215?

For technical support, including BF1100,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BF1100,215 requirements.

6.How does Aetrix verify that BF1100,215 is sourced from the original manufacturer or authorized distributors?

All BF1100,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BF1100,215 meets industry standards.

7.What is the process for return or replacement of BF1100,215?

All BF1100,215 units undergo pre-shipment inspection (PSI). If there is an issue with BF1100,215, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BF1100,215 part is unused and in its original packaging.

Return procedure for BF1100,215:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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