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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs

NXP Semiconductors BF1100R,215

Name: BF1100R,215
Brand: NXP Semiconductors
SKU: BF1100R,215
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BF1100R,215

Manufacturer:: NXP Semiconductors

Category:: Single FETs, MOSFETs

Package:: SOT-143R

Datasheet:: BF1100R,215.pdf

Description:: RF MOSFET 9V SOT143R

Quantity:: RFQ Add To RFQ list

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Inventory:7,912

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Product details

Overview

BF1100R,215 from NXP Semiconductors is a dual-gate enhancement-mode MOSFET in SOT143R package, designed for VHF/UHF RF amplification in 9–12 V supply systems. It delivers 28 mS forward transfer admittance (|y_fs|), 2.2 pF input capacitance at gate 1, and 2 dB noise figure at 800 MHz - enabling low-noise gain-controlled amplifier stages in TV tuners and professional communications receivers.

For engineers reviewing the BF1100R,215 datasheet, BF1100R,215 pinout, BF1100R,215 application, or BF1100R,215 equivalent, key selection criteria include AGC-compatible cross-modulation performance, thermal resistance of 550 K/W (junction-to-ambient), and validated operation up to 150 °C junction temperature in high-reliability RF front-end designs.

Technical Context

The BF1100R,215 integrates two cascaded MOSFET gates with internal bias circuitry linking source and substrate, enabling stable gain control under automatic gain control (AGC) conditions. Its short-channel structure yields high |y_fs|/C_ig1-s ratio (≈12.7 mS/pF), critical for broadband VHF/UHF amplification.

Gate 1 serves as RF input with 2.2–2.6 pF capacitance and <50 nA cutoff current; Gate 2 functions as AGC control terminal with 0.3–1.2 V threshold voltage and ±10 mA absolute max current. Drain-source voltage is rated to 14 V with 30 mA max continuous drain current.

Key Specifications

Parameter	Value and Actual Design Meaning
\|y_fs\|	28 mS typical - enables high small-signal gain in 50 Ω RF amplifier stages up to 1 GHz
C_ig1-s	2.2 pF typical - low input capacitance preserves impedance matching and bandwidth in VHF/UHF front-ends
Noise Figure	2 dB at 800 MHz - supports sensitive receiver applications requiring minimal signal degradation
V_DS max	14 V - compatible with standard 9 V and 12 V RF supply rails without derating
P_tot	200 mW - sufficient for low-power tuner IF/RF amplifiers with thermal derating above 40 °C ambient
T_j max	150 °C - ensures reliability in enclosed consumer and professional RF equipment
R_{th j-a}	550 K/W - defines thermal design margin for PCB layout on standard FR-4 with minimal copper area

Pinout & Package

SOT143R plastic microminiature package (2.8 × 1.4 × 0.95 mm), surface-mount, with gull-wing leads and marked %MZ. Designed for high-frequency RF layout with minimized lead inductance and controlled parasitic coupling between gates.

Pin/Terminal	Circuit Role	Design Meaning
1 (s,b)	Source and substrate connection	Common reference node for both gates; must be DC-grounded and RF-bypassed for stable bias and noise performance
2 (d)	Drain	RF output node; requires impedance-matching network and DC blocking capacitor in amplifier configurations
3 (g2)	Gate 2	AGC control input; biased at 4 V typical; modulates gain while maintaining low cross-modulation distortion
4 (g1)	Gate 1	RF input terminal; high-impedance node requiring 50 Ω source termination and ESD protection per handling caution

Key Features

Feature	Design Value
Dual-gate architecture with internal bias	Enables stable gain control during AGC without external bias networks, reducing component count in tuner IF stages
Low noise figure (2 dB @ 800 MHz)	Meets sensitivity requirements for UHF terrestrial TV reception and narrowband professional comms receivers
Superior cross-modulation performance	Validated via Fig.6: >110 dBµV unwanted voltage at 40 dB gain reduction - critical for multi-channel broadcast systems
High \|y_fs\|/C_ig1-s ratio	≈12.7 mS/pF - delivers wideband gain flatness from 50–1000 MHz without peaking compensation
ESD-protected antistatic packaging	Prevents gate oxide damage during SMT assembly; gate-source voltage must remain within ±10 mA current limits

Applications

Television Tuner Front-End	Professional UHF Receiver
Use Scenario: Amplifying weak VHF/UHF broadcast signals prior to mixer stage in analog/digital TV tuners. IC Role / Device Role / Timing Role: Low-noise RF amplifier with AGC-controlled gain staging using Gate 2 voltage modulation. Use Value: 2 dB noise figure and 28 mS \|y_fs\| ensure adequate signal-to-noise ratio for QAM64/256 demodulation in marginal reception areas.	Use Scenario: First-stage RF amplification in portable land-mobile radios operating at 400–500 MHz. IC Role / Device Role / Timing Role: Dual-gate gain-controlled preamplifier where Gate 2 adjusts dynamic range in response to RSSI feedback. Use Value: Verified cross-modulation suppression (>110 dBµV at 40 dB gain reduction) prevents adjacent-channel interference in dense spectrum environments.
RF Signal Generator Output Stage	Test Equipment IF Amplifier
Use Scenario: Final gain block in benchtop RF signal generators delivering calibrated output up to 1 GHz. IC Role / Device Role / Timing Role: Stable, low-distortion amplifier with fixed Gate 2 bias and RF input at Gate 1. Use Value: 14 V V_DS rating and 200 mW power dissipation support continuous-wave output into 50 Ω loads without thermal runaway.	Use Scenario: Intermediate frequency amplification in spectrum analyzers and vector signal analyzers. IC Role / Device Role / Timing Role: High-linearity, low-noise IF gain stage with precise gain setting via Gate 2 voltage. Use Value: 2.2 pF C_ig1-s minimizes loading on preceding filter networks, preserving selectivity and shape factor in 10–50 MHz IF bands.

Television Tuner Front-End

Professional UHF Receiver

Use Scenario: Amplifying weak VHF/UHF broadcast signals prior to mixer stage in analog/digital TV tuners.

IC Role / Device Role / Timing Role: Low-noise RF amplifier with AGC-controlled gain staging using Gate 2 voltage modulation.

Use Value: 2 dB noise figure and 28 mS |y_fs| ensure adequate signal-to-noise ratio for QAM64/256 demodulation in marginal reception areas.

Use Scenario: First-stage RF amplification in portable land-mobile radios operating at 400–500 MHz.

IC Role / Device Role / Timing Role: Dual-gate gain-controlled preamplifier where Gate 2 adjusts dynamic range in response to RSSI feedback.

Use Value: Verified cross-modulation suppression (>110 dBµV at 40 dB gain reduction) prevents adjacent-channel interference in dense spectrum environments.

RF Signal Generator Output Stage

Test Equipment IF Amplifier

Use Scenario: Final gain block in benchtop RF signal generators delivering calibrated output up to 1 GHz.

IC Role / Device Role / Timing Role: Stable, low-distortion amplifier with fixed Gate 2 bias and RF input at Gate 1.

Use Value: 14 V V_DS rating and 200 mW power dissipation support continuous-wave output into 50 Ω loads without thermal runaway.

Use Scenario: Intermediate frequency amplification in spectrum analyzers and vector signal analyzers.

IC Role / Device Role / Timing Role: High-linearity, low-noise IF gain stage with precise gain setting via Gate 2 voltage.

Use Value: 2.2 pF C_ig1-s minimizes loading on preceding filter networks, preserving selectivity and shape factor in 10–50 MHz IF bands.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-gate MOSFET amplifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BF998,215	Higher \|y_fs\| (35 mS typ), lower C_ig1-s (1.7 pF), SOT143 package (not R variant)	Better high-frequency gain flatness above 800 MHz but reduced thermal margin (R_{th j-a} = 500 K/W vs. 550 K/W)	Select BF998,215 when prioritizing 1–2 GHz bandwidth over AGC linearity at elevated ambient temperatures
NE3210M04	GaAs pHEMT, 0.5 µm gate, 15 dB gain @ 900 MHz, 0.6 dB NF, SOT343 package	Superior noise and gain at 800–1000 MHz but requires negative gate bias and lacks integrated AGC path	Choose NE3210M04 for ultra-low-noise front-ends where external AGC circuitry is acceptable and cost premium is justified

Compared with BF1100R,215, BF998,215 offers higher RF gain but less robust thermal derating above 40 °C, while NE3210M04 delivers GaAs-level noise performance at the expense of added bias complexity and no native dual-gate AGC functionality.

Availability

BF1100R,215 is available at Aetrix Electronics and suitable for television tuner front-ends, professional UHF receivers, and RF test equipment requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for BF1100R,215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer applications.

The BF1100R,215 belongs to NXP's legacy RF transistor product line, engineered specifically for high-linearity, low-noise VHF/UHF amplification in broadcast and professional communications equipment with integrated AGC capability.

FAQ

What is the maximum operating junction temperature for BF1100R,215?

The BF1100R,215 has a maximum operating junction temperature of +150 °C, as specified in the Limiting Values table. This rating applies under all operating conditions and must be maintained via appropriate PCB thermal design - especially given its 550 K/W junction-to-ambient thermal resistance. Derating begins above 40 °C ambient temperature per Fig.3 power derating curves.

How does BF1100R,215 differ from BF1100 in terms of thermal performance?

The BF1100R,215 uses the SOT143R package with higher thermal resistance: R_{th j-a} = 550 K/W versus 500 K/W for BF1100 (SOT143). Its power dissipation remains 200 mW but is limited to ambient temperatures up to 40 °C, compared to 50 °C for BF1100. This reflects mechanical differences in leadframe geometry and solder joint thermal path.

Can BF1100R,215 be used in 5 V supply applications?

The BF1100R,215 is specifically characterized and optimized for 9–12 V supply operation per its Features section and Static Characteristics data. While V_DS rating allows 5 V use, key parameters like |y_fs|, noise figure, and AGC linearity are not guaranteed below 9 V. The device may function but will not meet published specifications.

What is the purpose of the interconnected source and substrate (pin 1) in BF1100R,215?

In BF1100R,215, pin 1 connects both source and substrate to provide a common reference that stabilizes threshold voltage across temperature and improves cross-modulation performance during AGC. This internal connection eliminates need for external substrate biasing and enhances repeatability in mass-produced tuner modules.

Is BF1100R,215 pin-compatible with BF998,215?

Yes - BF1100R,215 and BF998,215 share identical SOT143R pinout (pin 1 = s,b; pin 2 = d; pin 3 = g2; pin 4 = g1) and mechanical footprint per MBC844 outline drawing. However, electrical characteristics differ significantly: BF998,215 has higher |y_fs| and lower C_ig1-s, requiring circuit re-optimization despite physical compatibility.

BF1100R,215 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: -

Package/Case:: SOT-143R

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Technology:: MOSFET (Metal Oxide)

Configuration:: N-Channel Dual Gate

Frequency:: 800MHz

Gain:: -

Voltage - Test:: 9 V

Current Rating (Amps):: 30mA

Noise Figure:: 2dB

Current - Test:: 10 mA

Power - Output:: -

Voltage - Rated:: 14 V

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-143R

BF1100R,215 FAQ

1.How can I place an order for BF1100R,215 through Aetrix?

Please submit a Request for Quotation (RFQ) for BF1100R,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BF1100R,215 reliable?

The price and inventory of BF1100R,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BF1100R,215 is usually 5 days.

3.What payment methods are accepted for BF1100R,215?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BF1100R,215 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BF1100R,215?

BF1100R,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BF1100R,215 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BF1100R,215?

For technical support, including BF1100R,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BF1100R,215 requirements.

6.How does Aetrix verify that BF1100R,215 is sourced from the original manufacturer or authorized distributors?

All BF1100R,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BF1100R,215 meets industry standards.

7.What is the process for return or replacement of BF1100R,215?

All BF1100R,215 units undergo pre-shipment inspection (PSI). If there is an issue with BF1100R,215, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BF1100R,215 part is unused and in its original packaging.

Return procedure for BF1100R,215:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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