NXP Semiconductors BF1100R,235

Overview

BF1100R,235 from NXP Semiconductors is a dual-gate enhancement-mode MOSFET in SOT143R package, designed for VHF/UHF RF amplification with 28 mS typical forward transfer admittance, 2.2 pF gate-1 input capacitance, and 2 dB noise figure at 800 MHz - deployed in television tuners and professional communications receivers.

For engineers reviewing the BF1100R,235 datasheet, BF1100R,235 pinout, BF1100R,235 application, or BF1100R,235 equivalent, key selection criteria include AGC-compatible cross-modulation performance, 9–12 V supply operation, low-noise gain control up to 1 GHz, and thermal derating behavior above 40 °C ambient.

Technical Context

The BF1100R,235 integrates two cascaded MOSFET gates (G1 and G2) with source and substrate internally tied, enabling independent AGC voltage application to gate 2 while preserving gain stability. Its short-channel structure delivers high y_fs/C_ig1-s ratio for broadband RF amplification.

It operates as a low-noise, high-linearity RF amplifier under 9 V or 12 V drain supply, with gate-1 threshold voltage between 0.3 V and 1.0 V and gate-2 threshold between 0.3 V and 1.2 V - optimized for stable transconductance across junction temperatures up to 150 °C.

Key Specifications

Pinout & Package

SOT143R plastic microminiature surface-mount package (3.0 × 1.4 × 1.1 mm), optimized for RF layout with minimized lead inductance and grounded substrate connection.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-gate MOSFET amplifier applications.

Compared with BF1100,235 and BF998,215, the BF1100R,235 trades slightly higher thermal resistance (550 K/W) for superior AGC linearity and cross-modulation suppression - making it the preferred choice in broadcast-grade tuners where signal fidelity under dynamic range compression is critical.

Availability

BF1100R,235 is available at Aetrix Electronics and suitable for television tuner front-ends, UHF professional receivers, and VHF broadcast monitoring systems requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for BF1100R,235 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in high-performance analog, RF, and mixed-signal solutions for automotive, industrial, and consumer markets.

The BF1100R,235 belongs to NXP's legacy RF transistor product line, engineered specifically for high-fidelity, low-noise amplification in broadcast and professional communications equipment operating from VHF through low-UHF bands.

FAQ

What is the maximum operating junction temperature for BF1100R,235?

The BF1100R,235 has a maximum operating junction temperature of +150 °C, as specified in its limiting values table. This rating applies under all operating conditions, including continuous RF drive at 12 V drain supply and 10 mA drain current. Thermal design must ensure junction temperature remains below this limit using the device's 550 K/W junction-to-ambient thermal resistance and appropriate PCB copper area.

How does BF1100R,235 differ from BF1100,235 in thermal performance?

The BF1100R,235 uses the SOT143R package with 550 K/W junction-to-ambient thermal resistance, compared to the BF1100,235's SOT143 package at 500 K/W. This results in earlier power derating - BF1100R,235 is rated for full 200 mW only up to 40 °C ambient, whereas BF1100,235 maintains full rating up to 50 °C ambient. Both share identical electrical specifications.

What AGC voltage range is recommended for gate 2 of BF1100R,235?

The BF1100R,235 is characterized for optimal cross-modulation performance with gate 2 (g2) biased at 4 V, as confirmed in static and dynamic test conditions across datasheet Figures 5–18. The gate-2-source breakdown voltage exceeds 13.2 V, allowing controlled AGC swing up to ±4 V around the 4 V nominal bias without risk of conduction or leakage increase.

Can BF1100R,235 be used in 1 GHz applications despite its 800 MHz noise figure spec?

Yes - the BF1100R,235 maintains usable gain up to 1 GHz, as verified by forward transfer admittance curves (Fig.21, Fig.25) and scattering parameters (Tables 1 & 3). While its minimum noise figure is specified at 800 MHz, its 28 mS |y_fs| and low C_rs (25–35 fF) support stable amplification at 1 GHz, particularly in non-critical noise applications like local oscillator buffering or driver stages.

What is the gate-1 threshold voltage range for BF1100R,235 at 12 V drain supply?

At V_DS = 12 V and I_D = 20 µA, the BF1100R,235 exhibits a gate-1-source threshold voltage (V_G1-S(th)) between 0.3 V and 1.0 V, per the Static Characteristics table. This tight range ensures predictable turn-on behavior in RF amplifier bias networks using fixed resistive dividers or active gate controllers.