NXP Semiconductors BF1100WR,115

Overview

BF1100WR from NXP Semiconductors is a dual-gate enhancement-mode MOSFET in SOT343R package, designed for VHF/UHF RF amplification with 28 mS forward transfer admittance, 2.2 pF input capacitance at gate 1, and 2 dB noise figure at 800 MHz - deployed in television tuners and professional communications receivers.

For engineers reviewing the BF1100WR datasheet, BF1100WR pinout, BF1100WR application, or BF1100WR equivalent, this page delivers verified electrical parameters, AGC-optimized cross-modulation performance, gate-specific breakdown voltages, thermal resistance data (R_{th j-a} = 350 K/W), and real-world RF gain behavior up to 1 GHz.

Technical Context

This dual-gate MOSFET integrates an internal bias circuit linking source and substrate to stabilize cross-modulation during automatic gain control (AGC). Gate 1 serves as RF input with low input capacitance (2.2 pF), while gate 2 functions as AGC control node with 4 V typical bias voltage.

It operates at 9–12 V supply, supports 10 mA drain current under standard test conditions, and achieves 28 mS |y_fs| with minimal reverse transfer capacitance (25–35 fF), enabling high isolation and stable broadband amplification from 50 MHz to 1 GHz.

Key Specifications

Pinout & Package

Package: SOT343R - plastic surface-mounted microminiature package with reverse pinning (pin 1 = source/bulk, pin 4 = gate 1), 1.35 × 1.15 mm footprint, 0.7 mm height, and 0.5 mm lead pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-gate MOSFET amplifier applications.

Compared with BF998 and NE3501M04, the BF1100WR uniquely balances AGC controllability, VHF/UHF noise performance, and proven reliability in broadcast tuner designs - making it irreplaceable where analog gain control and cross-modulation immunity are mandatory.

Availability

BF1100WR is available at Aetrix Electronics and suitable for television tuner front ends, professional UHF receivers, CATV signal distribution, RF test equipment preamplifiers, and VHF communication modules requiring stable component supply across long-lifecycle consumer and industrial programs.

Supply support for BF1100WR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company specializing in high-performance RF, analog, and mixed-signal solutions for automotive, industrial, and consumer applications.

The BF1100WR belongs to NXP's legacy RF transistor portfolio, engineered specifically for analog VHF/UHF signal amplification with integrated AGC optimization - targeting broadcast, communications, and test instrumentation markets.

FAQ

What is the maximum recommended drain-source voltage for BF1100WR?

The BF1100WR has an absolute maximum drain-source voltage (V_DS) rating of 14 V, as specified in the Limiting Values table. Operation above this voltage risks permanent device failure. For reliable long-term use, design should maintain V_DS ≤ 12 V under all conditions including transients and ripple, especially when paired with 9–12 V supply rails in tuner applications.

How does gate 2 (g2) function in BF1100WR AGC operation?

In the BF1100WR, gate 2 serves as the AGC control terminal and is typically biased at 4 V. Varying the gate 2 voltage modulates the channel conductivity without significantly affecting noise figure, enabling smooth gain reduction (up to 50 dB) while maintaining cross-modulation performance - a key feature validated in Figure 4 and Figure 5 of the datasheet.

Is BF1100WR pin-compatible with other SOT343R dual-gate MOSFETs like BF998?

No, the BF1100WR is not pin-compatible with BF998 despite sharing the SOT343R package. The BF1100WR uses reverse pinning (pin 1 = source/bulk), whereas BF998 uses standard pinning (pin 1 = gate 1). Swapping them without PCB revision will result in incorrect connections and functional failure.

What is the typical noise figure of BF1100WR and at what frequency is it measured?

The BF1100WR achieves a typical noise figure (F) of 2 dB at 800 MHz, measured under conditions of V_DS = 9 V, V_G2-S = 4 V, I_D = 10 mA, and with source and load impedances tuned to G_Sopt and B_Sopt. This value is confirmed in Table 2 and Figure 19 of the datasheet and reflects its suitability for UHF receiver front ends.

Can BF1100WR be used in 1 GHz applications?

Yes, the BF1100WR supports operation up to 1 GHz, as confirmed by scattering parameter data (Tables 1 and 3) showing |S₂₁| = 2.167 at 1000 MHz (V_DS = 9 V). However, gain rolls off above 800 MHz, and noise figure increases slightly; system-level validation is required for 1 GHz designs, particularly regarding stability and matching network losses.