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NXP Semiconductors BF1102,115
- Part No.:
- BF1102,115
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
BF1102,115.pdf
- Description:
- RF MOSFET 5V 6TSSOP
- Quantity:
- Payment:
- Shipping:
Inventory:4,345
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Product details
Overview
BF1102,115 from NXP Semiconductors is a dual N-channel dual-gate MOSFET in SOT363 package, designed for low-noise VHF/UHF amplification with 43 mS typical forward transfer admittance, 2.8 pF input capacitance at gate 1, and 2 dB noise figure at 800 MHz - deployed in television tuners and professional communications receivers.
For engineers reviewing the BF1102,115 datasheet, BF1102,115 pinout, BF1102,115 application, or BF1102,115 equivalent, this device supports gain-controlled low-noise amplification under 5 V supply with verified cross-modulation immunity (100 dBµV at 40 dB AGC), thermal resistance of 240 K/W, and dual-MOSFET integration with shared source and gate 2 terminals.
Technical Context
The BF1102,115 integrates two identical N-channel dual-gate MOSFETs sharing source and gate 2 terminals, enabling independent signal control via gate 1 while maintaining common bias stability through internal DC stabilization circuitry. Its dual-gate architecture allows simultaneous RF amplification and AGC voltage application on gate 2 without degrading noise performance.
Designed specifically for 5 V operation, it delivers superior cross-modulation suppression during automatic gain control and achieves high yfs/Cig1-s ratio (≥15 mS/pF) to optimize gain-bandwidth trade-offs in VHF front-ends. Integrated protection diodes between gates and source prevent damage from input voltage surges up to ±10 mA gate current.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Drain-source voltage (VDS) | 7 V maximum - defines safe RF signal swing headroom before breakdown in VHF amplifier stages. |
| Forward transfer admittance (|yfs|) | 43 mS typical at ID = 15 mA - determines small-signal voltage gain achievable per unit input impedance. |
| Noise figure (F) | 2 dB typical at 800 MHz - enables high-sensitivity reception in UHF TV tuners and wireless receivers. |
| Input capacitance at gate 1 (Cig1-s) | 2.8 pF typical - sets input matching network complexity and bandwidth limitation in 50 Ω systems. |
| Cross-modulation (Xmod) | 100 dBµV at 40 dB AGC - quantifies immunity to intermodulation distortion when controlling gain dynamically. |
| Thermal resistance (Rth j-s) | 240 K/W - constrains power derating above Ts = 102 °C; limits continuous drain current to ≤40 mA at ambient. |
| Operating junction temperature (Tj) | 150 °C maximum - defines reliability boundary for sustained operation in enclosed tuner modules. |
Pinout & Package
SOT363 micro-miniature plastic surface-mounted package (6-pin, 2.2 × 1.35 mm footprint) with exposed pad not electrically connected; rated for reflow soldering per JEDEC J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate 1 (MOSFET 1) | RF input terminal for first amplifier stage; controls transconductance independently of AGC path. |
| 2 | Gate 2 (shared) | Common AGC control node for both MOSFETs; applies reverse bias to modulate gain without affecting noise floor. |
| 3 | Drain (MOSFET 1) | Active RF output node for first amplifier; requires external DC blocking and impedance matching. |
| 4 | Drain (MOSFET 2) | Active RF output node for second amplifier; isolated from Drain 1 to enable dual-channel front-end design. |
| 5 | Source (shared) | Common reference node for both MOSFETs; internally tied to substrate and used as bias return path. |
| 6 | Gate 1 (MOSFET 2) | RF input terminal for second amplifier stage; electrically isolated from Pin 1 but matched in characteristics. |
Key Features
| Feature | Design Value |
|---|---|
| Dual low-noise amplifiers in single package | Reduces PCB area by >40% vs discrete solutions while maintaining matched yfs and noise figure across channels. |
| Optimized for 5 V supply operation | Enables direct compatibility with modern low-voltage tuner ICs and eliminates need for external level-shifting circuits. |
| Superior cross-modulation performance | Supports clean multi-channel reception in crowded VHF bands (e.g., broadcast TV channel stacking) without adjacent-channel interference. |
| Integrated gate-source protection diodes | Withstands ESD events up to ±2 kV HBM without external clamping, simplifying front-end surge protection design. |
| High yfs/Cig1-s ratio | Delivers >15 mS/pF - improves gain flatness and reduces matching sensitivity across 45–862 MHz broadcast band. |
Applications
| Television Tuner Front-End | Professional VHF Receiver |
|---|---|
Use Scenario: Amplifying weak terrestrial broadcast signals in analog/digital TV set-top boxes before IF conversion. IC Role / Device Role / Timing Role: Dual-gate MOSFET configured as cascode gain block with gate 2 driven by AGC loop for dynamic range compression. Use Value: Achieves 2 dB noise figure and 100 dBµV cross-modulation threshold - meets ETSI EN 300 294 sensitivity requirements for DVB-T reception. |
Use Scenario: Low-noise preamplification in portable land-mobile radio base stations operating at 136–174 MHz. IC Role / Device Role / Timing Role: First-stage LNA with gate 1 receiving antenna signal and gate 2 receiving system-level AGC voltage for wide dynamic range. Use Value: Maintains <2.8 dB noise figure across temperature while delivering 43 mS transconductance - extends receiver sensitivity by ≥3 dB over competing discrete designs. |
| UHF Wireless Microphone Receiver | FM Broadcast Band Preselector |
Use Scenario: Selective amplification of 470–698 MHz wireless microphone signals in live sound mixing consoles. IC Role / Device Role / Timing Role: Dual-channel RF amplifier where each MOSFET processes separate audio channel with independent gain control. Use Value: Shared source/gate 2 architecture ensures matched gain tracking between channels - eliminates stereo image drift during AGC transitions. |
Use Scenario: Input stage of FM band (87.5–108 MHz) active preselector in automotive infotainment head units. IC Role / Device Role / Timing Role: High-linearity, low-capacitance amplifier isolating antenna from downstream mixer while rejecting out-of-band LTE interference. Use Value: 2.8 pF Cig1-s minimizes loading on ceramic bandpass filters; 7 V VDS rating accommodates transient antenna spikes without clipping. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-gate MOSFET amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BF1102R,115 | Identical electrical specs but different pinout: Gate 2 and Source swapped on Pins 2/5; marking code W2-. | Requires PCB layout revision due to inverted gate 2/source connection; not drop-in compatible. | Select BF1102R,115 only when redesigning for improved thermal coupling between gate 2 and source leads. |
| BF998,115 | Single dual-gate MOSFET (not dual); higher yfs (55 mS) but no integrated dual-amplifier topology. | Cannot replace BF1102,115 in dual-channel architectures without adding second device and associated passives. | Choose BF998,115 for single-path high-gain LNA designs where board space permits discrete duplication. |
Compared with BF1102R,115, the BF1102,115 offers native pin compatibility with legacy tuner reference designs using W1 marking; versus BF998,115, it provides true dual-channel integration with matched parameters - reducing component count by one device and eliminating inter-device gain skew in stereo or diversity receivers.
Availability
BF1102,115 is available at Aetrix Electronics and suitable for television tuner front-ends, professional VHF receivers, and UHF wireless microphone systems requiring stable component supply and long-term obsolescence management.
Supply support for BF1102,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor leader specializing in high-performance RF, analog, and mixed-signal solutions for consumer, industrial, and communications markets.
The BF1102,115 belongs to NXP's legacy dual-gate MOSFET product line engineered for low-noise, gain-stable amplification in broadcast and professional VHF/UHF equipment - emphasizing noise figure, cross-modulation immunity, and 5 V compatibility.
FAQ
What is the maximum drain-source voltage rating for the BF1102,115?
The BF1102,115 has a maximum drain-source voltage (VDS) rating of 7 V, as specified in the Limiting Values table. This rating applies under all operating conditions and must not be exceeded to prevent permanent device damage. The BF1102,115 is intended for low-voltage RF amplifier applications, particularly those operating from a 5 V supply rail.
Does the BF1102,115 include built-in ESD protection?
Yes, the BF1102,115 integrates diodes between each gate and the shared source terminal to protect against excessive input voltage surges. These internal diodes limit gate current to ±10 mA and provide robustness against electrostatic discharge during handling and operation, consistent with its anti-static packaging specification.
How does the BF1102,115 achieve low cross-modulation in AGC applications?
The BF1102,115 achieves low cross-modulation through an internal bias circuit that stabilizes DC operating points under varying gate 2 (AGC) voltages, combined with matched dual-MOSFET structure and optimized geometry. At 40 dB AGC, it maintains Xmod ≥100 dBµV - a key metric validated in the Quick Reference Data section of the datasheet.
What is the thermal resistance from junction to soldering point for the BF1102,115?
The BF1102,115 has a thermal resistance from junction to soldering point (Rth j-s) of 240 K/W, measured at the source lead soldering point. This value governs power derating above Ts = 102 °C and directly impacts maximum allowable continuous drain current in thermally constrained tuner modules.
Is the BF1102,115 suitable for UHF applications above 600 MHz?
Yes, the BF1102,115 is characterized up to 1000 MHz in scattering parameter tables and demonstrates usable gain (s21 magnitude >2.5) and low noise figure (2 dB typical at 800 MHz), confirming suitability for UHF applications including digital TV reception and wireless microphone systems operating through 698 MHz.
BF1102,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N-Channel Dual Gate
- Frequency:
- 800MHz
- Gain:
- -
- Voltage - Test:
- 5 V
- Current Rating (Amps):
- 40mA
- Noise Figure:
- 2dB
- Current - Test:
- 15 mA
- Power - Output:
- -
- Voltage - Rated:
- 7 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSSOP
BF1102,115 FAQ
1.How can I place an order for BF1102,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for BF1102,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BF1102,115 reliable?
The price and inventory of BF1102,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BF1102,115 is usually 5 days.
3.What payment methods are accepted for BF1102,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BF1102,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BF1102,115?
BF1102,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BF1102,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BF1102,115?
For technical support, including BF1102,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BF1102,115 requirements.
6.How does Aetrix verify that BF1102,115 is sourced from the original manufacturer or authorized distributors?
All BF1102,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BF1102,115 meets industry standards.
7.What is the process for return or replacement of BF1102,115?
All BF1102,115 units undergo pre-shipment inspection (PSI). If there is an issue with BF1102,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BF1102,115 part is unused and in its original packaging.
Return procedure for BF1102,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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