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NXP Semiconductors BF1102R,115
- Part No.:
- BF1102R,115
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
BF1102R,115.pdf
- Description:
- RF MOSFET 5V 6TSSOP
- Quantity:
- Payment:
- Shipping:
Inventory:8,187
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Product details
Overview
BF1102R,115 from NXP Semiconductors is a dual N-channel dual-gate MOSFET optimized for 5 V low-noise VHF/UHF amplifier stages, featuring two matched gain-controlled amplifiers in one SOT363 package, with typical forward transfer admittance |yfs| = 43 mS, noise figure = 2 dB at 800 MHz, and cross-modulation performance of 100 dBµV at 40 dB AGC - deployed in television tuners and professional communications receivers.
For engineers reviewing the BF1102R,115 datasheet, BF1102R,115 pinout, BF1102R,115 application, or BF1102R,115 equivalent, key selection criteria include dual-gate AGC linearity, 5 V operation compatibility, SOT363 thermal resistance (Rth j-s = 240 K/W), and gate-protected architecture for surge resilience in tuner front-end designs.
Technical Context
The BF1102R,115 integrates two identical N-channel dual-gate MOSFETs sharing source and gate 2 terminals, with internal bias circuitry enabling stable DC operation and superior cross-modulation suppression at 5 V supply. Its dual-gate structure allows independent control of RF gain (via gate 1) and AGC response (via gate 2).
Each MOSFET exhibits high forward transfer admittance (|yfs| = 36–50 mS), low input capacitance (Cig1-s = 2.8 pF typ), and ultra-low noise figure (2–2.8 dB at 800 MHz), supported by integrated gate-source protection diodes and substrate-source interconnection for enhanced reliability.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 7 V max - defines maximum drain-source voltage swing before breakdown; sets headroom for 5 V supply designs. |
| |yfs| | 43 mS typ - high transconductance enables strong small-signal gain in VHF/UHF LNA stages. |
| Noise figure | 2 dB typ at 800 MHz - ensures minimal signal degradation in sensitive receiver front-ends. |
| Cig1-s | 2.8 pF typ - low gate-1 input capacitance preserves impedance matching and bandwidth in 50 Ω systems. |
| Xmod | 100 dBµV at 40 dB AGC - quantifies robustness against intermodulation distortion during automatic gain control. |
| Ptot | 200 mW max at Ts ≤ 102 °C - constrains thermal design for SOT363 PCB layout and power budgeting. |
| Tj | 150 °C max - establishes junction temperature limit for continuous operation under ambient derating. |
Pinout & Package
SOT363 micro-miniature plastic surface-mount package (6-pin, 2.2 × 1.35 mm footprint), with lead pitch of 0.65 mm and thermal resistance Rth j-s = 240 K/W.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate 1 (Amplifier 1) | RF input control node for first amplifier; biased via external resistor to set operating point. |
| 2 | Source (shared) | Common source terminal for both MOSFETs; internally connected to substrate for stability. |
| 3 | Drain (Amplifier 1) | RF output node for first amplifier; requires DC blocking and impedance matching network. |
| 4 | Drain (Amplifier 2) | RF output node for second amplifier; electrically isolated from Drain 1 but thermally coupled. |
| 5 | Gate 2 (shared) | AGC control input for both amplifiers; voltage variation adjusts gain without affecting bias point. |
| 6 | Gate 1 (Amplifier 2) | RF input control node for second amplifier; matched to Pin 1 for balanced dual-channel tuning. |
Key Features
| Feature | Design Value |
|---|---|
| Dual-gate AGC architecture | Enables precise, low-distortion gain control via Gate 2 while preserving RF signal integrity at Gate 1. |
| Integrated gate protection diodes | Prevents damage from ESD or input voltage surges up to ±10 mA gate current rating. |
| Shared source and gate 2 | Reduces component count and layout area in dual-amplifier tuner modules with synchronized AGC. |
| 5 V optimized operation | Guarantees full specification compliance at nominal supply - eliminates need for level-shifting in modern low-voltage tuners. |
| Matched dual MOSFETs | Ensures consistent gain, noise, and cross-modulation performance between channels for stereo or diversity reception. |
Applications
| Television Tuner Front-End | Professional UHF Receiver |
|---|---|
|
Use Scenario: Dual-channel RF amplification stage in analog/digital TV tuners handling VHF/UHF bands (45–862 MHz) with simultaneous AGC control. IC Role / Device Role / Timing Role: Dual-gate MOSFET providing low-noise pre-amplification and gain stabilization via Gate 2 voltage modulation. Use Value: Achieves 2 dB noise figure and 100 dBµV cross-modulation rejection at 40 dB AGC, enabling reliable reception in weak-signal urban environments. |
Use Scenario: High-linearity IF/RF gain block in portable UHF communication receivers requiring stable gain over temperature and supply variation. IC Role / Device Role / Timing Role: Dual N-channel MOSFET acting as matched pair for diversity reception or image-reject filtering paths. Use Value: Delivers 43 mS forward transfer admittance and <2.8 dB noise figure at 800 MHz, supporting wide dynamic range without external bias compensation. |
| CATV Set-Top Box Tuner | RF Test Equipment Preamp |
|
Use Scenario: Low-noise amplification in cable TV tuner modules where channel stacking and adjacent-channel rejection are critical. IC Role / Device Role / Timing Role: Dual-gate amplifier configured for variable gain control across 54–1002 MHz CATV spectrum with minimal intermodulation. Use Value: Cross-modulation performance of ≥100 dBµV at 40 dB AGC ensures clean multi-channel demodulation without ghosting or crosstalk artifacts. |
Use Scenario: Calibration-grade preamplifier stage in handheld RF analyzers and spectrum monitoring tools operating up to 1 GHz. IC Role / Device Role / Timing Role: Precision low-noise amplifier with matched dual sections for differential signal conditioning or reference path isolation. Use Value: 240 K/W junction-to-solder thermal resistance and 150 °C max junction temperature support continuous operation in compact, fanless enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-gate MOSFET amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BF1102,115 | Same die and electrical specs, but different marking (W1 vs W2-) and pinout: Gate 2 and Source pins swapped (Pin 2 = G2, Pin 5 = S). | Requires PCB layout revision due to inverted shared terminal assignment; not pin-compatible. | Select BF1102R,115 when shared source routing aligns with Pin 2 and shared gate 2 aligns with Pin 5 per SOT363 layout. |
| MRF901LT1 | Single-gate N-channel MOSFET (not dual-gate); higher Ptot (300 mW), lower |yfs| (25 mS), no integrated AGC path. | Lacks dual-gate AGC functionality; suitable only for fixed-gain or externally controlled gain stages. | Choose only if AGC is implemented digitally or via external VGA; BF1102R,115 remains preferred for analog AGC integration. |
Compared with BF1102,115, the BF1102R,115 offers identical RF performance but reversed shared-terminal pinout - critical for layout compatibility. Against MRF901LT1, BF1102R,115 delivers true dual-gate AGC capability, 70% higher transconductance, and 0.8 dB lower noise figure, making it irreplaceable in analog-tuned VHF/UHF front-ends.
Availability
BF1102R,115 is available at Aetrix Electronics and suitable for television tuner design, professional UHF receiver development, and CATV set-top box production requiring stable component supply, long-term obsolescence management, and traceable sourcing.
Supply support for BF1102R,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global leader in high-performance RF, analog, and mixed-signal semiconductors, delivering solutions for connectivity, security, and power efficiency across consumer, industrial, and communications markets.
The BF1102R,115 belongs to NXP's legacy RF transistor product line, specifically engineered for low-noise, dual-gate amplifier applications in broadcast and professional wireless equipment operating at VHF/UHF frequencies.
FAQ
What is the maximum drain-source voltage rating for BF1102R,115?
The BF1102R,115 has a maximum drain-source voltage (VDS) rating of 7 V, as specified in its limiting values table. This rating applies per MOSFET and must not be exceeded under any operating condition, including transient spikes. The device is designed for 5 V supply systems, leaving 2 V of safe margin for signal swing and ripple.
How does BF1102R,115 differ from BF1102,115 in pin configuration?
The BF1102R,115 differs from BF1102,115 in SOT363 pin assignment: Pin 2 is shared source (S) and Pin 5 is shared gate 2 (G2) in BF1102R,115, whereas BF1102,115 assigns Pin 2 to G2 and Pin 5 to S. This reversal affects PCB layout and cannot be interchanged without redesign.
What is the typical noise figure of BF1102R,115 and at what frequency is it measured?
The BF1102R,115 has a typical noise figure of 2 dB, measured at 800 MHz under standard test conditions (VDS = 5 V, VG2-S = 4 V, ID = 15 mA, YS = YS opt). This value is confirmed in Table 2 of the official NXP datasheet and reflects optimal low-noise performance in UHF band applications.
Does BF1102R,115 include built-in ESD protection?
Yes, the BF1102R,115 integrates protection diodes between each gate and source terminal, as explicitly stated in the Description section of the datasheet. These diodes safeguard against electrostatic discharge and input voltage surges, supporting gate current ratings of ±10 mA per gate under limiting conditions.
What thermal derating applies to BF1102R,115 above 102 °C solder point temperature?
BF1102R,115 must be derated linearly above a solder point temperature (Ts) of 102 °C, as shown in Figure 2 of the datasheet. At Ts = 125 °C, total power dissipation drops to approximately 150 mW; at Ts = 150 °C, it reaches zero. The thermal resistance from junction to solder point is 240 K/W, defining the slope of this derating curve.
BF1102R,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N-Channel Dual Gate
- Frequency:
- 800MHz
- Gain:
- -
- Voltage - Test:
- 5 V
- Current Rating (Amps):
- 40mA
- Noise Figure:
- 2dB
- Current - Test:
- 15 mA
- Power - Output:
- -
- Voltage - Rated:
- 7 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSSOP
BF1102R,115 FAQ
1.How can I place an order for BF1102R,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for BF1102R,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BF1102R,115 reliable?
The price and inventory of BF1102R,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BF1102R,115 is usually 5 days.
3.What payment methods are accepted for BF1102R,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BF1102R,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BF1102R,115?
BF1102R,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BF1102R,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BF1102R,115?
For technical support, including BF1102R,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BF1102R,115 requirements.
6.How does Aetrix verify that BF1102R,115 is sourced from the original manufacturer or authorized distributors?
All BF1102R,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BF1102R,115 meets industry standards.
7.What is the process for return or replacement of BF1102R,115?
All BF1102R,115 units undergo pre-shipment inspection (PSI). If there is an issue with BF1102R,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BF1102R,115 part is unused and in its original packaging.
Return procedure for BF1102R,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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