NXP Semiconductors BF1102R,135

Overview

BF1102R,135 from NXP Semiconductors is a dual N-channel dual-gate MOSFET in SOT363 package, designed for low-noise VHF/UHF gain-controlled amplification at 5 V supply. It features two matched amplifier sections sharing source and gate 2 terminals, with typical forward transfer admittance |y_fs| = 43 mS, noise figure = 2 dB at 800 MHz, and cross-modulation input level = 100 dBμV at 40 dB AGC - enabling high-fidelity signal amplification in TV tuners and professional comms receivers.

For engineers reviewing the BF1102R,135 datasheet, BF1102R,135 pinout, BF1102R,135 application, or BF1102R,135 equivalent, key selection criteria include dual-gate AGC linearity, 5 V operation compatibility, SOT363 thermal resistance (R_{th j-s} = 240 K/W), and verified cross-modulation performance under real-world RF front-end conditions.

Technical Context

The BF1102R,135 integrates two identical N-channel dual-gate MOSFETs with internally connected sources and gate 2 pins, enabling compact dual-amplifier topologies. Its internal bias circuit ensures DC stabilization at 5 V, while integrated gate-source diodes provide surge protection without external components.

Each MOSFET operates with drain-source voltage up to 7 V, drain current up to 40 mA, and total power dissipation of 200 mW at T_s ≤ 102 °C. Dynamic performance is characterized at V_DS = 5 V, V_G2-S = 4 V, I_D = 15 mA, delivering consistent y_fs, C_iss, and noise figure across VHF–UHF bands.

Key Specifications

Pinout & Package

SOT363 micro-miniature plastic surface-mounted package (6-pin, 2.2 mm × 1.35 mm footprint) with 0.65 mm pitch; optimized for RF layout density and thermal conduction via shared source pad.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-gate MOSFET amplifier applications.

Compared with BF1102,135 and MRF901LT1G, the BF1102R,135 uniquely delivers integrated dual-gate AGC in a space-constrained SOT363 package - eliminating external control components and enabling true analog gain stabilization without sacrificing noise performance.

Availability

BF1102R,135 is available at Aetrix Electronics and suitable for television tuners, professional UHF receivers, FM radio IF stages, wireless microphone systems, and VHF communications equipment requiring stable component supply across long-lifecycle consumer and industrial programs.

Supply support for BF1102R,135 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company specializing in high-performance RF, analog, and mixed-signal solutions for automotive, industrial, and consumer applications.

The BF1102R,135 belongs to NXP's legacy dual-gate MOSFET product line, engineered specifically for low-noise, gain-controlled amplification in VHF/UHF broadcast and communications equipment operating from 5 V supplies.

FAQ

What is the maximum drain-source voltage rating for BF1102R,135?

The BF1102R,135 has a maximum drain-source voltage (V_DS) rating of 7 V, as specified in the Absolute Maximum Ratings table. This value defines the upper limit for RF signal swing and DC bias headroom. Exceeding 7 V risks permanent device failure. The BF1102R,135 is intended for 5 V supply systems, where this margin accommodates transient peaks while maintaining reliable operation in VHF/UHF amplifier stages.

How does BF1102R,135 differ from BF1102,135?

The BF1102R,135 and BF1102,135 share identical electrical specifications, thermal characteristics, pinout, and package (SOT363). The only documented difference is the marking code: BF1102R,135 uses "W2-" while BF1102,135 uses "W1". Both are manufactured by NXP on the same process and are functionally interchangeable in all circuit implementations described in the datasheet.

What is the typical noise figure of BF1102R,135 and at what frequency is it measured?

The BF1102R,135 has a typical noise figure of 2 dB, measured at 800 MHz under conditions of V_DS = 5 V, V_G2-S = 4 V, I_D = 15 mA, and Y_S = Y_{S opt. This value is confirmed in Table 2 of the datasheet and reflects its suitability for UHF tuner front-ends where low-noise amplification is critical to signal-to-noise ratio.}

Can BF1102R,135 be used in 3.3 V applications?

The BF1102R,135 is explicitly designed for 5 V applications, as stated in the FEATURES section. Its internal bias circuit, gate threshold voltages (V_G1-S(th) = 0.3–1.0 V, V_G2-S(th) = 0.3–1.2 V), and optimal dynamic performance (e.g., |y_fs|, noise figure) are characterized at 5 V. Operation at 3.3 V may result in reduced gain, degraded noise performance, and unstable AGC behavior; NXP does not specify or guarantee functionality below 5 V.

What thermal derating applies to BF1102R,135 above 102 °C solder point temperature?

BF1102R,135 has a thermal resistance from junction to soldering point (R_{th j-s}) of 240 K/W. Its total power dissipation (P_tot) must be linearly derated above T_s = 102 °C, reaching zero at T_j = 150 °C. For example, at T_s = 120 °C, allowable P_tot = 200 mW × (1 − (120−102)/48) = 125 mW. This derating ensures safe junction temperature in thermally constrained PCB layouts.