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NXP Semiconductors BF1105WR,135
- Part No.:
- BF1105WR,135
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- SC-82A, SOT-343
- Datasheet:
-
BF1105WR,135.pdf
- Description:
- RF MOSFET 5V CMPAK-4
- Quantity:
- Payment:
- Shipping:
Inventory:2,909
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Product details
Overview
BF1105WR,135 from NXP Semiconductors is an enhancement-type N-channel dual-gate MOSFET with source and substrate internally connected, designed for low-noise RF amplification up to 1 GHz. It features forward transfer admittance of 31 mS (typ), input capacitance at gate 1 of 2.2 pF (typ), noise figure of 1.7 dB (typ) at 800 MHz, and operates from a 5 V supply in VHF/UHF tuner front-ends.
For engineers reviewing the BF1105WR,135 datasheet, BF1105WR,135 pinout, BF1105WR,135 application, or BF1105WR,135 equivalent, key selection considerations include its self-biasing architecture for AGC stability, dual-gate isolation for cross-modulation suppression, SOT343R package compatibility, and verified 800 MHz noise performance under 5 V/12 mA bias conditions.
Technical Context
The BF1105WR,135 implements a short-channel dual-gate structure with integrated diodes between each gate and source for ESD protection. Its internal self-biasing circuit sets a nominal drain current of 8–16 mA at VG2-S = 4 V and VDS = 5 V, enabling stable operation without external bias networks in tuner IF stages.
Dual-gate topology provides independent control of gain (via gate 1) and channel conduction (via gate 2), supporting AGC functionality while maintaining low noise figure (1.7–2.5 dB) and high power gain (20 dB at 800 MHz). Gate 2-source threshold voltage is 0.3–1.2 V, ensuring reliable turn-on with standard 4 V AGC control levels.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 7 V maximum - defines absolute upper limit for drain-source voltage swing in 5 V supply systems |
| |yfs| | 31 mS typical - enables high small-signal gain with minimal input drive in VHF/UHF LNA stages |
| Cig1-ss | 2.2 pF typical - low gate-1 input capacitance preserves Q-factor in tuned input matching networks |
| F | 1.7 dB typical at 800 MHz - meets stringent noise requirements for UHF TV tuner front-end amplifiers |
| Xmod | 100 dBμV at 40 dB AGC - quantifies strong immunity to cross-modulation distortion in multi-channel broadcast reception |
| Tj | 150 °C maximum - supports continuous operation in compact tuner modules with limited thermal dissipation |
| Ptot | 200 mW at Tamb ≤ 80 °C - constrains PCB layout to ensure adequate copper area for thermal relief |
Pinout & Package
SOT343R plastic surface-mounted package (4 leads, reverse pinning); dimensions: 2.2 × 1.35 × 0.9 mm (L × W × H); thermal resistance Rth j-a = 350 K/W in free air.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Source | Common reference node for both gates and drain; internally tied to substrate for enhanced RF grounding |
| 2 | Drain | RF output node; requires DC blocking and impedance-matching network for 50 Ω system interface |
| 4 | Gate 2 | AGC control terminal; accepts 0–4 V analog voltage to modulate transconductance without affecting noise figure |
| 3 | Gate 1 | RF input terminal; high-impedance node requiring careful layout to minimize parasitic coupling and maintain Cig1-ss integrity |
Key Features
| Feature | Design Value |
|---|---|
| Integrated gate-source diodes | Protect against ±10 mA gate surge currents during tuning transients or ESD events |
| Self-biasing architecture | Eliminates need for external bias resistors, reducing component count and board space in tuner IF modules |
| Dual-gate isolation | Crss = 25–40 fF ensures minimal signal feedthrough from gate 2 (AGC) to gate 1 (RF input) |
| Low Cig2-ss | 1.6 pF typical at gate 2 - maintains high AGC loop bandwidth without destabilizing control response |
| Enhancement-mode operation | Guarantees zero drain current at VG2-S = 0 V, enabling fail-safe shutdown during AGC loss |
Applications
| Television Tuner Front-End | Professional UHF Receiver |
|---|---|
Use Scenario: Amplifying weak terrestrial broadcast signals in analog/digital TV tuners operating at 47–862 MHz. IC Role / Device Role / Timing Role: Low-noise RF amplifier stage with AGC-controlled gain using gate 2, directly interfacing antenna input and mixer. Use Value: 1.7 dB noise figure and 100 dBμV cross-modulation level enable robust reception of low-SNR channels in dense urban environments. | Use Scenario: Signal conditioning in portable UHF two-way radios and spectrum analyzers requiring wide dynamic range. IC Role / Device Role / Timing Role: First-stage LNA with independent gain control, where gate 1 receives RF and gate 2 accepts analog AGC voltage from RSSI detector. Use Value: Self-biasing design ensures stable 12 mA quiescent current across temperature, preserving gain flatness and noise performance over −20 to +70 °C. |
| VHF Broadcast Receiver | RF Test Equipment Input Stage |
Use Scenario: High-selectivity preselector amplifier in FM radio receivers covering 87.5–108 MHz band. IC Role / Device Role / Timing Role: Dual-gate amplifier configured with gate 1 as resonant input and gate 2 as DC bias control, rejecting image frequencies via tuned input network. Use Value: 2.2 pF gate-1 input capacitance allows precise LC tank design for <100 kHz bandwidth, minimizing adjacent-channel interference. | Use Scenario: Input buffer in calibrated RF signal generators and vector network analyzers requiring repeatable small-signal linearity. IC Role / Device Role / Timing Role: Fixed-gain, low-distortion amplifier stage with gate 2 grounded and gate 1 driven by precision 50 Ω source. Use Value: 31 mS forward transfer admittance delivers >38 dB power gain at 200 MHz, enabling accurate amplitude calibration without cascaded stages. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-gate MOSFET amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BF1105R,115 | SOT143R package (3.0 × 1.4 mm); pin 1 = source, pin 2 = drain, pin 4 = gate 2, pin 3 = gate 1 - same electrical specs but different pinout and larger footprint | Requires PCB layout revision due to reversed pinning and 25% larger body size; suitable only for new designs targeting legacy footprint compatibility | Select BF1105R,115 only when SOT143R mechanical constraints dominate, accepting higher thermal resistance (Rth j-a not specified, but larger package implies lower dissipation capability) |
| BF998,115 | Higher |yfs| (45 mS typ), lower F (1.4 dB typ at 800 MHz), but no integrated self-biasing - requires external bias network | Delivers superior noise/gain trade-off but increases BOM count and layout complexity; not drop-in compatible due to missing internal bias path | Choose BF998,115 when ultimate noise performance justifies added design effort and board space for discrete bias components |
Compared with BF1105R,115, the BF1105WR,135 offers smaller SOT343R footprint and verified cross-modulation performance at 40 dB AGC; versus BF998,115, it trades 3 dB lower noise figure for guaranteed self-biasing stability and reduced external component dependency in production tuner modules.
Availability
BF1105WR,135 is available at Aetrix Electronics and suitable for television tuner front-ends, professional UHF receivers, and VHF broadcast receiver designs requiring stable component supply across long-lifecycle consumer electronics programs.
Supply support for BF1105WR,135 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company specializing in high-performance RF, analog, and mixed-signal solutions for communications, automotive, and industrial markets.
The BF1105WR,135 belongs to NXP's legacy dual-gate MOSFET product line engineered specifically for low-noise, AGC-capable RF amplification in broadcast and professional wireless equipment operating below 1 GHz.
FAQ
What is the maximum drain-source voltage rating for BF1105WR,135?
The BF1105WR,135 has a maximum drain-source voltage (VDS) rating of 7 V, as defined in the Absolute Maximum Ratings table. This limit applies under all operating conditions and must not be exceeded to prevent permanent device damage. The BF1105WR,135 is intended for use in 5 V supply systems, where this margin accommodates transient voltage spikes during tuner switching or ESD events.
Does BF1105WR,135 require external bias components?
No, the BF1105WR,135 incorporates an internal self-biasing circuit that establishes a nominal drain current of 8–16 mA at VG2-S = 4 V and VDS = 5 V. This eliminates the need for external bias resistors or current sources in standard tuner amplifier configurations, simplifying design and improving thermal stability compared to discrete-bias alternatives.
What is the noise figure specification for BF1105WR,135 at 800 MHz?
The BF1105WR,135 exhibits a typical noise figure (F) of 1.7 dB at 800 MHz, measured under conditions of YS = YS opt, VDS = 5 V, VG2-S = 4 V, and ID = 12 mA. The maximum specified noise figure is 2.5 dB under identical conditions, making the BF1105WR,135 suitable for demanding UHF receiver front-end applications.
How is the pinout arranged on the SOT343R package of BF1105WR,135?
The BF1105WR,135 uses the SOT343R package with reverse pinning: Pin 1 = source, Pin 2 = drain, Pin 4 = gate 2, Pin 3 = gate 1 (top view, marking side up). This differs from the SOT143B (BF1105) and SOT143R (BF1105R) variants, requiring dedicated land patterns and verification against MSB842 package drawing before PCB layout.
Can BF1105WR,135 be used in 1 GHz applications?
The BF1105WR,135 is characterized for low-noise amplification up to 1 GHz, with documented power gain of 20 dB at 800 MHz and scattering parameters provided through 1000 MHz. While usable near 1 GHz, its forward transfer admittance drops above 800 MHz, and noise figure degrades beyond specification - system-level validation is required for 900–1000 MHz operation in production designs.
BF1105WR,135 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- SC-82A, SOT-343
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N-Channel Dual Gate
- Frequency:
- 800MHz
- Gain:
- 20dB
- Voltage - Test:
- 5 V
- Current Rating (Amps):
- 30mA
- Noise Figure:
- 1.7dB
- Current - Test:
- -
- Power - Output:
- -
- Voltage - Rated:
- 7 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- CMPAK-4
BF1105WR,135 FAQ
1.How can I place an order for BF1105WR,135 through Aetrix?
Please submit a Request for Quotation (RFQ) for BF1105WR,135 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BF1105WR,135 reliable?
The price and inventory of BF1105WR,135 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BF1105WR,135 is usually 5 days.
3.What payment methods are accepted for BF1105WR,135?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BF1105WR,135 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BF1105WR,135?
BF1105WR,135 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BF1105WR,135 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BF1105WR,135?
For technical support, including BF1105WR,135 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BF1105WR,135 requirements.
6.How does Aetrix verify that BF1105WR,135 is sourced from the original manufacturer or authorized distributors?
All BF1105WR,135 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BF1105WR,135 meets industry standards.
7.What is the process for return or replacement of BF1105WR,135?
All BF1105WR,135 units undergo pre-shipment inspection (PSI). If there is an issue with BF1105WR,135, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BF1105WR,135 part is unused and in its original packaging.
Return procedure for BF1105WR,135:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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