NXP Semiconductors BF1107,215

Overview

BF1107,215 from NXP Semiconductors is a depletion-mode N-channel single-gate MOSFET in SOT23 package, designed for RF switching with drain-source interchangeability, integrated gate-source/drain protection diodes, and on-state insertion loss ≤2.5 dB (50 Ω, 50–860 MHz). It serves as a currentless RF switch in tuner loop-through and transceiver path selection.

For engineers reviewing the BF1107,215 datasheet, BF1107,215 pinout, BF1107,215 application, or BF1107,215 equivalent, this page delivers verified RF switching parameters, SOT23 terminal mapping, isolation performance at VSG = VDG = 5 V, pinch-off voltage range (−3 to −4.5 V), and real-world use cases in broadcast and wireless signal routing.

Technical Context

The BF1107,215 operates as a depletion-mode device requiring zero gate bias for conduction, enabling passive RF switching without control current. Its symmetric drain-source structure supports bidirectional signal flow, and integrated gate protection diodes suppress ESD and voltage surges up to ±7 V.

Dynamic RF performance is characterized across 50–860 MHz with matched 50 Ω and 75 Ω terminations: on-state insertion loss ≤3.5 dB and off-state isolation ≥30 dB. Thermal resistance from junction to solder point is 260 K/W, consistent with SOT23's surface-mount thermal constraints.

Key Specifications

Pinout & Package

SOT23 plastic surface-mounted package (TO-236AB), 3-lead, small-outline footprint (2.8 × 1.4 × 1.1 mm) with standard lead pitch of 0.95 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF switching applications.

Compared with BF1207,215 and CE3512K3, the BF1107,215 uniquely supports true currentless switching at 0 V gate bias while delivering proven 30+ dB isolation and <2.5 dB loss in the 50–860 MHz broadcast band-making it optimal for cost-sensitive, low-power RF routing where simplicity and robustness outweigh ultra-high-frequency gain.

Availability

BF1107,215 is available at Aetrix Electronics and suitable for VCR tuner loop-through, transceiver antenna switching, and FM radio front-end routing requiring stable component supply, ESD-hardened RF performance, and SOT23 footprint compatibility.

Supply support for BF1107,215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer applications.

The BF1107,215 belongs to NXP's legacy RF discrete portfolio, engineered specifically for low-cost, high-reliability analog RF switching in broadcast and wireless infrastructure where zero-bias operation and integrated ESD protection are essential.

FAQ

What is the gate-source pinch-off voltage range for the BF1107,215?

The BF1107,215 has a gate-source pinch-off voltage (V_GS(p)) ranging from −3 V to −4.5 V at V_DS = 1 V and I_D = 20 µA. This defines the maximum negative gate voltage required to fully turn off the depletion-mode device. The BF1107,215 remains conductive at 0 V gate bias, enabling its currentless RF switching behavior without external drive circuitry.

Can drain and source terminals be swapped in the BF1107,215?

Yes, the BF1107,215 features interchangeable drain and source terminals per its datasheet specification. This symmetry allows bidirectional RF signal flow and simplifies PCB layout in applications like antenna switching or tuner loop-through. The BF1107,215 maintains identical RF performance (L_ins(on), I_SLoff) regardless of terminal assignment, provided V_DS and V_SD remain within their 3 V absolute maximum ratings.

What is the maximum RF frequency range supported by the BF1107,215?

The BF1107,215 is characterized for operation from 50 MHz to 860 MHz, with guaranteed on-state insertion loss ≤2.5 dB and off-state isolation ≥30 dB at 50 Ω termination. While usable beyond 860 MHz, performance degrades above this range due to parasitic capacitance (C_ig/C_og = 1.5–2 pF) and package limitations. The BF1107,215 is optimized for VHF/UHF broadcast bands-not microwave or cellular LTE/5G frequencies.

Does the BF1107,215 require external ESD protection?

No, the BF1107,215 integrates diodes between gate-source and gate-drain that provide inherent protection against electrostatic discharge and input voltage surges up to ±7 V. This eliminates the need for external TVS diodes or RC snubbers in most RF switching designs. However, proper handling precautions (e.g., grounded workstations) remain essential, as the BF1107,215 is explicitly labeled ESD-sensitive in its datasheet.

What is the thermal resistance of the BF1107,215 and how does it affect power handling?

The BF1107,215 has a junction-to-solder-point thermal resistance (R_th(j-sp)) of 260 K/W, measured at the gate lead solder point. Given its 10 mA absolute maximum drain current and low R_DS(on) (12–20 Ω), self-heating is minimal in typical RF switching use. The BF1107,215 is not intended for continuous DC power switching; its thermal design supports pulsed RF duty cycles where average power dissipation stays below ~10 mW, ensuring reliable operation within the 150 °C junction temperature limit.