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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs

NXP Semiconductors BF1107,235

Name: BF1107,235
Brand: NXP Semiconductors
SKU: BF1107,235
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BF1107,235

Manufacturer:: NXP Semiconductors

Category:: Single FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BF1107,235.pdf

Description:: RF MOSFET 3V SOT23

Quantity:: RFQ Add To RFQ list

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Inventory:2,845

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Product details

Overview

BF1107 from NXP Semiconductors is a depletion-mode N-channel single-gate MOSFET in SOT23 package, designed as a currentless RF switch for high-isolation signal routing. It delivers ≤2.5 dB on-state insertion loss (50 Ω, 50–860 MHz), ≥30 dB off-state isolation, and −3 to −4.5 V gate-source pinch-off voltage, enabling passive loop-through switching in VCR tuners and transceiver front-ends.

For engineers reviewing the BF1107 datasheet, BF1107 pinout, BF1107 application, or BF1107 equivalent, this page provides verified RF switching specifications, validated SOT23 terminal mapping, confirmed interchangeability of drain/source terminals, and real-world selection guidance for RF signal path design.

Technical Context

The BF1107 operates as a depletion-mode device requiring no gate bias current to maintain conduction-ideal for zero-power RF switching. Its integrated gate-source and gate-drain diodes provide ESD protection up to ±7 V, while symmetric drain-source structure enables bidirectional RF signal handling without polarity constraints.

Dynamic performance is characterized across 50–860 MHz with fixed 50 Ω or 75 Ω terminations; on-state loss and off-state isolation are specified under defined VSG/VDG conditions, and input/output capacitance varies predictably between 0.9 pF (VGS = −5 V) and 2.0 pF (VGS = 0 V).

Key Specifications

Parameter	Value and Actual Design Meaning
Device Type	Depletion-mode N-channel MOSFET - conducts at VGS = 0 V; requires negative gate voltage to turn off
On-State Insertion Loss	≤2.5 dB @ 50 MHz–860 MHz, RS = RL = 50 Ω - ensures minimal RF power loss in active signal path
Off-State Isolation	≥30 dB @ 50 MHz–860 MHz, RS = RL = 50 Ω - blocks unwanted RF coupling between ports during switch-off
Pinch-Off Voltage VGS(p)	−3 to −4.5 V @ ID = 20 µA - defines minimum gate-source voltage needed to fully deplete channel
Drain-Source On-Resistance	12–20 Ω @ VGS = 0 V, ID = 1 mA - determines series impedance in conducting state at low-frequency DC bias points
Input Capacitance Cig	1.5–2.0 pF @ VGS = 0 V, f = 1 MHz - directly impacts impedance matching and bandwidth in RF layout
ESD Sensitivity	HBM Class 1B (±2 kV) - mandates ESD-safe handling per IEC 61340-5-1 during assembly and test

Pinout & Package

SOT23 plastic surface-mounted package (JEDEC TO-236AB); 3-lead, 1.3 mm × 2.9 mm footprint; thermal resistance Rth(j-sp) = 260 K/W to solder point.

Pin/Terminal	Circuit Role	Design Meaning
1	Drain	RF signal input/output port; interchangeable with Pin 2 per datasheet - supports bidirectional signal routing
2	Source	RF signal input/output port; electrically identical to Pin 1 - eliminates orientation dependency in layout
3	Gate	Control terminal; accepts DC bias (0 V to −5 V) to modulate RF conduction; protected by integrated diodes

Key Features

Feature	Design Value
Currentless RF switching	No gate drive current required - eliminates bias network losses and simplifies control interface
Integrated gate protection diodes	Gate-source and gate-drain diodes rated to ±7 V - suppresses ESD transients without external clamps
Interchangeable drain and source	Pin 1 and Pin 2 function identically - reduces PCB routing complexity and enables symmetrical RF layout
Low on-state insertion loss	≤2.5 dB over full 50–860 MHz band with 50 Ω terminations - preserves signal integrity in tuner and IF paths
High off-state isolation	≥30 dB across same frequency range - prevents crosstalk and LO leakage in multi-path RF systems

Applications

VCR Tuner Loop-Through	Transceiver Antenna Switching
Use Scenario: Passive RF signal bypass in analog videocassette recorder tuner modules, where antenna input must be routed to both IF output and recording path simultaneously. IC Role / Device Role / Timing Role: Currentless RF switch providing low-loss, bidirectional signal path without DC bias or control current. Use Value: Enables zero-power loop-through functionality with ≤2.5 dB loss and ≥30 dB isolation, eliminating need for active switching circuitry.	Use Scenario: Transmit/receive path selection in half-duplex RF transceivers, isolating PA output from LNA input during RX mode. IC Role / Device Role / Timing Role: Depletion-mode MOSFET acting as a voltage-controlled RF SPST switch with fast turn-on/off via gate bias. Use Value: Achieves ≥30 dB TX-to-RX isolation at 50–860 MHz, preventing receiver desensitization without timing-critical control signals.
IF Signal Routing	RF Test Fixture Switching
Use Scenario: Selective routing of intermediate frequency signals between multiple demodulator inputs in broadcast receiver ICs. IC Role / Device Role / Timing Role: Low-capacitance RF switch inserted in 50 Ω IF path; drain/source symmetry allows flexible placement. Use Value: Maintains impedance match with Cig/Cog ≤2.0 pF and RDSon ≤20 Ω, minimizing group delay distortion in 30–100 MHz IF bands.	Use Scenario: Reconfigurable signal path in automated RF test fixtures, where manual SMA jumper replacement is impractical. IC Role / Device Role / Timing Role: Surface-mount RF switch enabling remote-controlled path selection via TTL-compatible gate voltage. Use Value: Delivers repeatable ≤2.5 dB insertion loss and ≥30 dB isolation across 50–860 MHz, supporting calibration-grade measurement accuracy.

VCR Tuner Loop-Through

Transceiver Antenna Switching

Use Scenario: Passive RF signal bypass in analog videocassette recorder tuner modules, where antenna input must be routed to both IF output and recording path simultaneously.

IC Role / Device Role / Timing Role: Currentless RF switch providing low-loss, bidirectional signal path without DC bias or control current.

Use Value: Enables zero-power loop-through functionality with ≤2.5 dB loss and ≥30 dB isolation, eliminating need for active switching circuitry.

Use Scenario: Transmit/receive path selection in half-duplex RF transceivers, isolating PA output from LNA input during RX mode.

IC Role / Device Role / Timing Role: Depletion-mode MOSFET acting as a voltage-controlled RF SPST switch with fast turn-on/off via gate bias.

Use Value: Achieves ≥30 dB TX-to-RX isolation at 50–860 MHz, preventing receiver desensitization without timing-critical control signals.

IF Signal Routing

RF Test Fixture Switching

Use Scenario: Selective routing of intermediate frequency signals between multiple demodulator inputs in broadcast receiver ICs.

IC Role / Device Role / Timing Role: Low-capacitance RF switch inserted in 50 Ω IF path; drain/source symmetry allows flexible placement.

Use Value: Maintains impedance match with Cig/Cog ≤2.0 pF and RDSon ≤20 Ω, minimizing group delay distortion in 30–100 MHz IF bands.

Use Scenario: Reconfigurable signal path in automated RF test fixtures, where manual SMA jumper replacement is impractical.

IC Role / Device Role / Timing Role: Surface-mount RF switch enabling remote-controlled path selection via TTL-compatible gate voltage.

Use Value: Delivers repeatable ≤2.5 dB insertion loss and ≥30 dB isolation across 50–860 MHz, supporting calibration-grade measurement accuracy.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BF1207,235	Higher pinch-off voltage (−4 to −6 V); slightly higher RDSon (15–25 Ω); same SOT23 package and pinout	Better noise margin in noisy environments but marginally higher insertion loss (≤2.8 dB)	Select BF1207,235 when gate drive swing exceeds −4.5 V or higher off-state robustness is required
SI2301-TP	Enhancement-mode P-channel MOSFET; requires positive gate drive; no built-in gate protection diodes	Needs external ESD protection and level-shifting circuitry; not currentless - adds quiescent power	Choose SI2301-TP only if system already provides +5 V gate bias and layout accommodates added protection components

Compared with BF1207,235 and SI2301-TP, the BF1107 uniquely combines true currentless operation, integrated gate protection, and drain-source interchangeability - making it optimal for low-power, high-reliability RF signal routing where gate drive simplicity and ESD resilience are critical.

Availability

BF1107 is available at Aetrix Electronics and suitable for VCR tuner modules, transceiver front-ends, and RF test instrumentation requiring stable component supply, consistent SOT23 packaging, and guaranteed RF performance across 50–860 MHz.

Supply support for BF1107 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer applications.

The BF1107 belongs to NXP's legacy RF discrete portfolio, engineered specifically for analog RF signal switching in broadcast and communications equipment where zero-bias operation and high isolation are essential.

FAQ

What is the maximum RF frequency range supported by the BF1107?

The BF1107 is characterized for operation from 50 MHz to 860 MHz, with insertion loss and isolation data explicitly specified across this band under 50 Ω and 75 Ω termination conditions. Performance beyond 860 MHz is not documented in the official NXP datasheet BF1107_4, and design use outside this range requires independent validation.

Can drain and source terminals of the BF1107 be used interchangeably in circuit design?

Yes - the BF1107 datasheet explicitly states "drain and source are interchangeable" in both the General Description and Pinning Information sections. This symmetry is inherent to its depletion-mode MOSFET structure and enables bidirectional RF signal flow without polarity constraints in layout.

Does the BF1107 require external ESD protection components?

No - the BF1107 integrates diodes between gate-source and gate-drain, rated to withstand ±7 V transient voltages. However, it remains ESD-sensitive (HBM Class 1B), so handling precautions (grounded workstations, ionizers) are still mandatory; external protection is unnecessary for typical board-level ESD events.

What is the gate-source pinch-off voltage specification for the BF1107?

The BF1107 has a gate-source pinch-off voltage VGS(p) of −3 V (typical) to −4.5 V (maximum), measured at VDS = 1 V and ID = 20 µA. This defines the most positive gate voltage at which the channel is fully depleted - critical for determining usable gate bias range in switching applications.

Is the BF1107 compatible with lead-free reflow soldering processes?

Yes - the BF1107 is packaged in a standard plastic SOT23 (TO-236AB) housing rated for lead-free reflow per JEDEC J-STD-020. Peak temperature tolerance is 260 °C (10 s max), matching common Pb-free profile requirements, and the device carries appropriate RoHS compliance markings per NXP documentation.

BF1107,235 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Technology:: MOSFET (Metal Oxide)

Configuration:: N-Channel

Frequency:: -

Gain:: -

Voltage - Test:: -

Current Rating (Amps):: 10mA

Noise Figure:: -

Current - Test:: -

Power - Output:: -

Voltage - Rated:: 3 V

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23 (TO-236AB)

BF1107,235 FAQ

1.How can I place an order for BF1107,235 through Aetrix?

Please submit a Request for Quotation (RFQ) for BF1107,235 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BF1107,235 reliable?

The price and inventory of BF1107,235 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BF1107,235 is usually 5 days.

3.What payment methods are accepted for BF1107,235?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BF1107,235 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BF1107,235?

BF1107,235 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BF1107,235 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BF1107,235?

For technical support, including BF1107,235 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BF1107,235 requirements.

6.How does Aetrix verify that BF1107,235 is sourced from the original manufacturer or authorized distributors?

All BF1107,235 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BF1107,235 meets industry standards.

7.What is the process for return or replacement of BF1107,235?

All BF1107,235 units undergo pre-shipment inspection (PSI). If there is an issue with BF1107,235, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BF1107,235 part is unused and in its original packaging.

Return procedure for BF1107,235:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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