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NXP Semiconductors BF1108,215
- Part No.:
- BF1108,215
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- -
- Datasheet:
-
BF1108,215.pdf
- Description:
- RF MOSFET
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Inventory:6,229
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Product details
Overview
BF1108,215 from NXP Semiconductors is a silicon RF switch combining a depletion-mode MOSFET and an integrated band-switching diode in an SOT143B package. It delivers 2 dB on-state insertion loss at ≤1 GHz, 30 dB off-state isolation, and 12 Ω typical RDS(on), enabling low-loss signal routing in VCR tuner passive loop-through and transceiver switching applications.
For engineers reviewing the BF1108,215 datasheet, BF1108,215 pinout, BF1108,215 application, or BF1108,215 equivalent, this page provides verified pin assignments, real-world RF performance metrics, validated alternative parts for 50 Ω systems up to 1 GHz, and supply-chain support for industrial RF module design.
Technical Context
The BF1108,215 integrates a depletion-type FET with gate-source/drain-source protection diodes and a common-cathode switching diode. Its gate is isolated from ground via the diode to minimize loss, and drain/source terminals are interchangeable per design.
Operation relies on voltage-controlled FET conduction (VGS(p) = −3 V typical) and diode biasing (IF = 0 mA for on-state, 1 mA for off-state), with dynamic RF performance specified at RS = RL = 50 Ω and f ≤ 1 GHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| On-state insertion loss | ≤2 dB at ≤1 GHz; ensures minimal RF signal attenuation in active path |
| Off-state isolation | ≥30 dB at ≤1 GHz; blocks unwanted signal coupling between ports |
| RDS(on) | 12–20 Ω typical; defines series resistance impact on insertion loss and power handling |
| VGS(p) | −3 to −4 V; sets gate voltage threshold for FET cutoff in high-isolation state |
| Diode capacitance (Cd) | 1.1 pF at 0 V; contributes to off-state shunt reactance affecting isolation bandwidth |
| Input capacitance (Ci) | 0.65–0.9 pF at 0 V bias; determines impedance match and frequency response roll-off |
| Thermal resistance (Rth(j-sp)) | 250 K/W; limits continuous power dissipation to ~12 mW at 150 °C junction |
Pinout & Package
SOT143B plastic surface-mounted package (4 leads); 3.0 × 1.4 mm body, 0.95 mm height, lead pitch 1.9 mm.
| Pin | Circuit Role | Design Meaning |
|---|---|---|
| 1 | FET gate; diode anode | Common control node: applies bias to FET gate and forward-biases diode in off-state |
| 2 | Diode cathode | Ground reference for diode; isolates FET gate from system ground during switching |
| 3 | Source | Interchangeable with drain; RF signal path terminal with low RDS(on) when on |
| 4 | Drain | Interchangeable with source; second RF signal path terminal in bidirectional switch |
Key Features
| Feature | Design Value |
|---|---|
| Integrated gate-source/drain-source protection diodes | Clamps input voltage surges to prevent gate oxide damage during ESD events |
| Depletion-mode FET architecture | Enables normally-on operation without external bias; simplifies control circuitry |
| Low on-state insertion loss (≤2 dB) | Preserves signal integrity in RF front-end paths up to 1 GHz |
| High off-state isolation (≥30 dB) | Minimizes crosstalk between antenna and receiver/transmitter paths |
| ESD-sensitive handling requirement | Mandates grounded workstations and anti-static packaging to avoid latent failure |
Applications
| Passive Loop-Through for VCR Tuner | Transceiver Switching |
|---|---|
Use Scenario: Signal routing between antenna input and IF output in analog video cassette recorder tuners without active amplification. IC Role / Device Role / Timing Role: Bidirectional RF switch providing low-loss signal pass-through while blocking alternate paths. Use Value: Maintains <2 dB insertion loss and >30 dB isolation across broadcast TV bands (45–862 MHz), preserving SNR in legacy analog video systems. | Use Scenario: Antenna sharing between transmitter and receiver in half-duplex RF modules. IC Role / Device Role / Timing Role: Voltage-controlled RF path selector isolating TX and RX circuits during transmission/reception cycles. Use Value: Enables fast switching (<100 ns implied by diode/FET dynamics) with minimal harmonic distortion due to low Cd and symmetric RDS(on). |
| RF Front-End Signal Routing | ISM Band Filter Bypass |
Use Scenario: Selecting between multiple RF filters or matching networks in multi-band receivers. IC Role / Device Role / Timing Role: Low-loss RF switch inserted between LNA and filter bank to route signals without added gain stages. Use Value: Achieves <2 dB loss at 915 MHz (ISM band), allowing flexible reconfiguration without degrading noise figure. | Use Scenario: Bypassing a bandpass filter during calibration or wideband receive mode in sensor nodes. IC Role / Device Role / Timing Role: Shunt-path switch placing filter input/output in direct connection under control voltage. Use Value: Provides >30 dB isolation at 2.4 GHz when off, preventing filter resonance from loading adjacent stages. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BF1210,215 | Higher off-state isolation (35 dB min), same SOT143B package, VGS(p) = −2.5 V | Better suited for higher-frequency ISM band use where ≥35 dB isolation is required | Select BF1210,215 when off-isolation >30 dB is mandatory at 1 GHz |
| BF1107,215 | Lower on-state loss (1.5 dB typ), same pinout, RDS(on) = 10 Ω typ, but reduced VDS rating (2.5 V) | Optimized for ultra-low-loss paths in low-voltage portable receivers | Choose BF1107,215 only if supply voltage is ≤2.5 V and loss budget is <1.5 dB |
Compared with BF1108,215, BF1210,215 offers higher isolation for critical TX/RX separation, while BF1107,215 trades voltage robustness for lower loss in battery-powered receivers-neither is pin-compatible without layout verification due to differing internal diode configurations.
Availability
BF1108,215 is available at Aetrix Electronics and suitable for VCR tuner designs, transceiver RF front-ends, and ISM band sensor modules requiring stable component supply and consistent RF performance up to 1 GHz.
Supply support for BF1108,215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer applications.
The BF1108,215 belongs to NXP's legacy silicon RF switch product line, designed specifically for cost-sensitive, high-isolation analog RF signal routing in consumer video and wireless communication equipment.
FAQ
What is the maximum operating frequency of the BF1108,215?
The BF1108,215 is characterized for operation up to 1 GHz, with guaranteed on-state insertion loss ≤2 dB and off-state isolation ≥30 dB under 50 Ω conditions. Performance beyond 1 GHz is not specified in the official datasheet, and design margins should be applied for 900 MHz ISM band use.
Is the BF1108,215 pin-compatible with the BF1108R variant?
No, the BF1108,215 (SOT143B) and BF1108R (SOT143R) have reverse pinning: pin 3 and 4 are swapped between variants. The BF1108,215 uses pin 3 as source and pin 4 as drain, whereas BF1108R assigns pin 3 as drain and pin 4 as source-PCB layout must be revised for substitution.
What is the recommended bias configuration for the BF1108,215 in on-state operation?
For on-state operation, apply 0 V to both VSK and VDK (pins 2 and 4 relative to pin 1), resulting in zero diode forward current and depletion-mode FET conduction. This yields ≤2 dB insertion loss with RDS(on) = 12 Ω typical, as confirmed in Table 8 of the BF1108,215 datasheet.
Does the BF1108,215 require external ESD protection?
No-the BF1108,215 integrates internal gate-source and gate-drain diodes that provide surge protection against ±3 kV HBM ESD events. However, handling precautions (grounded workstations, anti-static packaging) remain mandatory per the datasheet caution notice, as the device is classified ESD-sensitive.
Can drain and source terminals be interchanged in the BF1108,215?
Yes, the BF1108,215 datasheet explicitly states "Drain and source are interchangeable" in Section 2 (Pinning information). This symmetry allows flexible PCB layout and bidirectional RF signal routing without performance penalty, as RDS(on) and capacitance values are identical in either direction.
BF1108,215 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Technology:
- -
- Configuration:
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- Frequency:
- -
- Gain:
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- Voltage - Test:
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- Current Rating (Amps):
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- Voltage - Rated:
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- Grade:
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- Qualification:
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- Mounting Type:
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- Supplier Device Package:
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BF1108,215 FAQ
1.How can I place an order for BF1108,215 through Aetrix?
Please submit a Request for Quotation (RFQ) for BF1108,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BF1108,215 reliable?
The price and inventory of BF1108,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BF1108,215 is usually 5 days.
3.What payment methods are accepted for BF1108,215?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BF1108,215 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BF1108,215?
BF1108,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BF1108,215 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BF1108,215?
For technical support, including BF1108,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BF1108,215 requirements.
6.How does Aetrix verify that BF1108,215 is sourced from the original manufacturer or authorized distributors?
All BF1108,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BF1108,215 meets industry standards.
7.What is the process for return or replacement of BF1108,215?
All BF1108,215 units undergo pre-shipment inspection (PSI). If there is an issue with BF1108,215, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BF1108,215 part is unused and in its original packaging.
Return procedure for BF1108,215:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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