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NXP Semiconductors BF1108/L,215
- Part No.:
- BF1108/L,215
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- TO-253-4, TO-253AA
- Datasheet:
-
BF1108/L,215.pdf
- Description:
- RF MOSFET SOT143B
- Quantity:
- Payment:
- Shipping:
Inventory:4,868
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Product details
Overview
BF1108/L,215 from NXP Semiconductors is a silicon RF switch combining a depletion-mode MOSFET and an integrated band-switching diode in an SOT143B package. It delivers 2 dB typical on-state insertion loss at ≤1 GHz, 30 dB minimum off-state isolation, and 12 Ω typical RDS(on), enabling high-fidelity signal routing in VCR tuner passive loop-through and transceiver switching applications.
For engineers reviewing the BF1108/L,215 datasheet, BF1108/L,215 pinout, BF1108/L,215 application, or BF1108/L,215 equivalent, this page provides verified RF switching specifications, validated SOT143B pin mapping, real-world use cases in broadcast and wireless systems, and confirmed alternative parts with documented electrical and layout differences.
Technical Context
The BF1108/L,215 integrates a depletion-type FET with gate-source/drain protection diodes and a common-cathode switching diode. Its gate is isolated from ground via the diode to minimize loss, and drain/source terminals are interchangeable for flexible PCB layout.
Operation relies on voltage-controlled FET conduction (VGS(p) = −3 to −4 V) and diode biasing (VSK/VDK = 0 V for on-state, 5 V for off-state), achieving low capacitance (Ci/Co = 0.65–0.9 pF) and fast RF switching up to 1 GHz with no external bias components required.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| On-state insertion loss | ≤2 dB at ≤1 GHz (RS = RL = 50 Ω); ensures minimal signal attenuation in RF paths |
| Off-state isolation | ≥30 dB at ≤1 GHz (RS = RL = 50 Ω); blocks unwanted signal coupling between ports |
| RDS(on) | 12–20 Ω at VGS = 0 V, ID = 1 mA; defines conductive path resistance during active switching |
| VGS(p) | −3 to −4 V at VDS = 1 V, ID = 20 µA; sets gate voltage threshold for FET cutoff |
| Input/output capacitance | 0.65–0.9 pF (on-state); maintains impedance match and bandwidth integrity up to 1 GHz |
| Diode reverse voltage | 35 V maximum; protects against transient surges across gate-source/drain paths |
| Thermal resistance | 250 K/W (junction-to-solder point); informs thermal design for continuous 10 mA operation |
Pinout & Package
SOT143B plastic surface-mounted package (3.0 × 1.4 × 1.1 mm), 4-lead, lead-free compliant. Pin 1 is FET gate/diode anode; Pin 2 is diode cathode; Pins 3 and 4 are interchangeable source and drain terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | FET gate; diode anode | Common control node for FET turn-on/off and diode forward biasing |
| 2 | Diode cathode | Reference node for diode bias voltage (VSK/VDK) to isolate gate from ground |
| 3 | Source | Interchangeable with drain; forms one side of RF signal path through FET channel |
| 4 | Drain | Interchangeable with source; forms other side of RF signal path through FET channel |
Key Features
| Feature | Design Value |
|---|---|
| Integrated gate-source/drain protection diodes | Clamps input voltage surges to prevent gate oxide damage during ESD events |
| Depletion-mode FET architecture | Enables normally-on operation without external bias supply, simplifying RF front-end design |
| Low on-state capacitance (0.65 pF) | Maintains >1 GHz bandwidth with minimal phase distortion in 50 Ω systems |
| Interchangeable drain/source terminals | Allows bidirectional RF signal routing and reduces PCB layout constraints |
| ESD-sensitive handling requirement | Requires grounded workstations and anti-static packaging to preserve gate integrity |
Applications
| VCR Tuner Loop-Through | Transceiver Antenna Switching |
|---|---|
Use Scenario: Routing analog video/audio signals between antenna input and recording/playback circuits in legacy VCR systems. IC Role / Device Role / Timing Role: Passive RF switch enabling bidirectional signal flow without DC bias or power consumption. Use Value: 2 dB insertion loss preserves signal-to-noise ratio; 30 dB isolation prevents crosstalk between tuner and VCR head circuits. | Use Scenario: Selecting between transmit and receive paths in half-duplex RF transceivers operating below 1 GHz. IC Role / Device Role / Timing Role: Voltage-controlled RF path selector managing antenna interface timing during TX/RX state transitions. Use Value: 12 Ω RDS(on) minimizes insertion loss in TX path; fast switching supports burst-mode communication protocols. |
| FM Radio Front-End Switching | ISM Band Receiver Signal Routing |
Use Scenario: Isolating FM antenna input from auxiliary audio sources in portable radios with shared RF front-end. IC Role / Device Role / Timing Role: Low-loss RF multiplexer directing antenna signals to demodulator while blocking interference from audio DAC outputs. Use Value: 0.65 pF input capacitance avoids detuning FM band LC matching networks; 35 V diode VR rating withstands antenna static discharge. | Use Scenario: Channel selection in 433/868 MHz ISM band receivers where multiple sensor inputs feed a single ADC. IC Role / Device Role / Timing Role: High-isolation RF switch enabling time-division multiplexing of sensor signals into shared receiver chain. Use Value: 30 dB off-state isolation prevents inter-channel leakage; SOT143B footprint allows dense placement near RF ICs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BF1108R/L,215 | SOT143R package with reversed pinning (Pin 1 = gate/anode, Pin 2 = cathode, Pin 3 = drain, Pin 4 = source) | Same RF performance but requires PCB layout revision due to swapped source/drain positions | Select when board space permits re-routing or when sourcing SOT143R inventory |
| UMX2N,115 | Higher 3.5 dB max insertion loss; 35 dB min isolation; SOT323 package; no integrated protection diodes | Lacks gate surge protection; requires external ESD components for robustness in consumer environments | Choose for cost-sensitive designs where external protection is already implemented |
Compared with BF1108/L,215, BF1108R/L,215 offers identical RF specs but mandates PCB redesign for pin compatibility, while UMX2N,115 trades lower integration and higher loss for smaller footprint and reduced BOM count in non-ESD-critical applications.
Availability
BF1108/L,215 is available at Aetrix Electronics and suitable for VCR tuner modules, transceiver antenna interfaces, and ISM band receiver signal routing requiring stable component supply across industrial and consumer electronics production cycles.
Supply support for BF1108/L,215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer markets.
The BF1108/L,215 belongs to NXP's legacy silicon RF switch product line, engineered specifically for low-loss, high-isolation signal routing in analog broadcast and sub-1 GHz wireless systems.
FAQ
What is the maximum operating frequency supported by the BF1108/L,215?
The BF1108/L,215 is characterized for operation up to 1 GHz, with typical on-state insertion loss of 1.3 dB and off-state isolation of 38 dB at exactly 1 GHz under 50 Ω conditions. Performance beyond 1 GHz is not specified or guaranteed per the NXP datasheet Rev. 04.
Does the BF1108/L,215 require external bias circuitry to operate?
No, the BF1108/L,215 operates as a depletion-mode device and is normally on with zero gate bias. Applying 5 V to the diode cathode (Pin 2) relative to gate/anode (Pin 1) turns the FET off. No external resistors, capacitors, or voltage regulators are needed for basic switching functionality.
Can source and drain pins of the BF1108/L,215 be used interchangeably in PCB layout?
Yes, the BF1108/L,215 datasheet explicitly states "Drain and source are interchangeable." Pins 3 and 4 function identically as either terminal of the FET channel, allowing symmetric RF path design and reducing routing complexity in compact layouts.
What ESD precautions are required when handling the BF1108/L,215?
The BF1108/L,215 is sensitive to ElectroStatic Discharge per NXP documentation. Handling requires grounded workstations, anti-static wrist straps, conductive foam storage, and ESD-safe packaging. Gate oxide failure may occur at discharges below 2 kV if unprotected during assembly or test.
Is the BF1108/L,215 RoHS compliant and lead-free?
Yes, the BF1108/L,215 uses a lead-free SOT143B package and complies with RoHS Directive 2011/65/EU. The marking code "NGp" on the device body confirms its lead-free status per NXP's standard product labeling convention.
BF1108/L,215 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- TO-253-4, TO-253AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N-Channel
- Frequency:
- -
- Gain:
- -
- Voltage - Test:
- -
- Current Rating (Amps):
- 10mA
- Noise Figure:
- -
- Current - Test:
- -
- Power - Output:
- -
- Voltage - Rated:
- 3 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-143B
BF1108/L,215 FAQ
1.How can I place an order for BF1108/L,215 through Aetrix?
Please submit a Request for Quotation (RFQ) for BF1108/L,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BF1108/L,215 reliable?
The price and inventory of BF1108/L,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BF1108/L,215 is usually 5 days.
3.What payment methods are accepted for BF1108/L,215?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BF1108/L,215 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BF1108/L,215?
BF1108/L,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BF1108/L,215 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BF1108/L,215?
For technical support, including BF1108/L,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BF1108/L,215 requirements.
6.How does Aetrix verify that BF1108/L,215 is sourced from the original manufacturer or authorized distributors?
All BF1108/L,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BF1108/L,215 meets industry standards.
7.What is the process for return or replacement of BF1108/L,215?
All BF1108/L,215 units undergo pre-shipment inspection (PSI). If there is an issue with BF1108/L,215, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BF1108/L,215 part is unused and in its original packaging.
Return procedure for BF1108/L,215:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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