NXP Semiconductors BF1109R,215

Overview

BF1109R,215 from NXP Semiconductors is an enhancement-type N-channel dual-gate MOSFET designed for RF amplification in VHF/UHF tuner front-ends. It features 30 mS typical forward transfer admittance, 2.2 pF input capacitance at gate 1, 1.5 dB typical noise figure at 800 MHz, and operates with 9 V supply in television tuners and professional communications equipment.

For engineers reviewing the BF1109R,215 datasheet, BF1109R,215 pinout, BF1109R,215 application, or BF1109R,215 equivalent, key selection criteria include low-noise RF gain up to 1 GHz, self-biasing stability under AGC, cross-modulation performance at 40 dB AGC, and SOT143R package compatibility with high-frequency layout requirements.

Technical Context

The BF1109R,215 integrates internal diodes between gates and source for ESD protection and uses a short-channel structure optimized for high y_fs/C_ig1-ss ratio. Its dual-gate architecture enables independent control of RF signal path (gate 1) and gain-setting bias (gate 2), supporting stable amplification under automatic gain control conditions.

Self-biasing circuitry ensures DC stabilization and maintains cross-modulation performance across temperature and supply variations. Gate 2-source threshold voltage ranges from 0.3 V to 1.2 V, enabling precise gain tuning while maintaining 8–16 mA self-biasing drain current at V_G2-S = 4 V and V_DS = 9 V.

Key Specifications

Pinout & Package

SOT143R plastic surface-mounted package with reverse pinning (4 leads); dimensions: 3.0 × 1.4 × 1.1 mm (D × E × A), lead pitch 1.9 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-gate MOSFET amplifier applications.

Compared with BF1109,215 and BF1109WR,215, the BF1109R,215 offers identical RF performance and bias behavior but fits SOT143R - a mid-size compromise between SOT143B's layout flexibility and SOT343R's miniaturization, making it optimal for tuner modules balancing manufacturability and board area.

Availability

BF1109R,215 is available at Aetrix Electronics and suitable for television tuners, UHF professional receivers, and VHF broadcast receivers requiring stable component supply across long-lifecycle consumer and industrial programs.

Supply support for BF1109R,215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company specializing in high-performance RF, analog, and mixed-signal solutions for automotive, industrial, and consumer applications.

The BF1109R,215 belongs to NXP's legacy RF transistor product line, engineered specifically for low-noise, high-gain VHF/UHF amplification in broadcast and communications equipment with 9 V supply constraints.

FAQ

What is the maximum drain-source voltage rating for BF1109R,215?

The BF1109R,215 has a maximum drain-source voltage (V_DS) rating of 11 V, as specified in the Absolute Maximum Ratings table. This value represents the upper limit before device breakdown occurs and must not be exceeded in any operating condition, including transient spikes. The BF1109R,215 is intended for use in 9 V supply systems such as television tuners, where headroom below 11 V ensures safe operation under normal and fault conditions.

Does BF1109R,215 require external bias resistors for operation?

No, the BF1109R,215 incorporates an internal self-biasing circuit that establishes a stable 8–16 mA drain current when gate 2 is biased at 4 V and drain-source voltage is 9 V. This eliminates the need for external bias resistors in many tuner applications, simplifying schematic design and reducing component count. The BF1109R,215 achieves this through integrated on-die structures that set the operating point without external components, though gate 2 may still be driven by an AGC voltage source.

What is the noise figure of BF1109R,215 and at what frequency is it measured?

The BF1109R,215 has a typical noise figure (F) of 1.5 dB, measured at 800 MHz under conditions of V_DS = 9 V, V_G2-S = 4 V, I_D = 12 mA, and Y_S = Y_{S opt}. This value is confirmed in Table 2 of the datasheet and reflects its suitability for low-noise amplification in UHF bands. The BF1109R,215 maintains noise performance up to 1 GHz, with F remaining ≤2.5 dB across the specified frequency range.

How does the pin configuration of BF1109R,215 differ from BF1109,215?

The BF1109R,215 uses SOT143R packaging with reverse pinning: Pin 1 = source, Pin 2 = drain, Pin 4 = gate 2, Pin 3 = gate 1. In contrast, BF1109,215 uses SOT143B with standard pinning: Pin 1 = source, Pin 2 = drain, Pin 3 = gate 2, Pin 4 = gate 1. This difference means direct PCB replacement requires layout modification. The BF1109R,215 marking code is NBp, distinguishing it visually from BF1109,215's NFp code.

Can BF1109R,215 be used in automotive applications?

No, the BF1109R,215 is not automotive-qualified. Per NXP's disclaimers, unless explicitly stated in the datasheet, the device is not tested or warranted for automotive use, including life-critical, safety-critical, or AEC-Q100-compliant systems. The BF1109R,215 is intended for consumer broadcast and professional communications equipment. Using it in automotive applications voids warranty and carries full design responsibility for reliability and failure modes.