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NXP Semiconductors BF1201WR,115
- Part No.:
- BF1201WR,115
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- SC-82A, SOT-343
- Datasheet:
-
BF1201WR,115.pdf
- Description:
- RF MOSFET 5V CMPAK-4
- Quantity:
- Payment:
- Shipping:
Inventory:9,972
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Product details
Overview
BF1201WR from NXP Semiconductors is an enhancement-type N-channel dual-gate PoLo MOSFET with source and substrate internally connected, designed for VHF/UHF RF amplification in 3–9 V supply systems. It delivers 28 mS typical forward transfer admittance, 1.0 dB typical noise figure at 400 MHz, and 105 dBµV cross-modulation input level at 40 dB AGC - enabling high-fidelity signal amplification in TV tuners and professional comms receivers.
For engineers reviewing the BF1201WR datasheet, BF1201WR pinout, BF1201WR application, or BF1201WR equivalent, key selection criteria include its SOT343R package, dual-gate self-biasing architecture for AGC stability, low-noise gain-controlled operation, and verified performance in 50–900 MHz RF front-ends with DC stabilization under varying gain control conditions.
Technical Context
The BF1201WR employs a short-channel dual-gate structure where Gate 1 controls transconductance and Gate 2 provides AGC voltage biasing, enabling precise gain reduction without degrading cross-modulation performance. Integrated gate-source diodes protect against input voltage surges up to ±10 mA gate current.
Its internal self-biasing circuit ensures stable DC operating point across temperature and supply variations, while the PoLo (Polarity Logic) topology supports low-noise amplification with minimal distortion during automatic gain control - confirmed by 105 dBµV Xmod at 40 dB AGC and 1.0 dB Fmin at 400 MHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 10 V maximum drain-source voltage - sets safe RF swing headroom in 5 V supply designs |
| |yfs| | 28 mS typical forward transfer admittance - enables high small-signal gain in narrowband VHF/UHF LNA stages |
| F | 1.0 dB typical noise figure at 400 MHz - meets stringent SNR requirements in digital TV tuner IF amplifiers |
| Cig1-ss | 2.6 pF typical input capacitance at Gate 1 - allows compact matching networks below 1 GHz |
| Xmod | 105 dBµV input level for 1% cross-modulation at 40 dB AGC - ensures clean multi-channel reception under strong adjacent signals |
| Tj | 150 °C maximum junction temperature - supports reliable operation in sealed tuner modules with limited airflow |
| Ptot | 200 mW total power dissipation - defines thermal design margin for continuous-wave RF output in SOT343R package |
Pinout & Package
BF1201WR is housed in the SOT343R plastic surface-mount package (3.0 × 1.4 × 0.9 mm), featuring reverse pinning (1–2–4–3 top view) and optimized thermal resistance (Rth j-s = 155 K/W) for RF power handling.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Source | Common reference node for both gates and drain; internally tied to substrate - requires low-impedance RF ground |
| 2 | Drain | RF output node; connects to tuned load or next-stage input - must be impedance-matched per scattering parameters |
| 4 | Gate 2 | AGC control input; biased at 4 V typical for gain reduction - accepts DC voltage or filtered control signal |
| 3 | Gate 1 | RF input node; high-impedance gate with integrated protection diode - matched to 50 Ω via external network |
Key Features
| Feature | Design Value |
|---|---|
| Dual-gate PoLo architecture | Enables independent RF input (G1) and AGC control (G2) with internal self-biasing - eliminates external bias resistors in tuner IF amps |
| Integrated gate-source protection diodes | Withstands ±10 mA gate surge current - prevents ESD damage during tuner module assembly and field operation |
| Low-noise gain-controlled amplification | 1.0 dB noise figure at 400 MHz with <1.8 dB max variation - maintains SNR integrity across full AGC range |
| High yfs/Cig1 ratio | 28 mS / 2.6 pF ≈ 10.8 mS/pF - delivers superior gain-bandwidth product for compact UHF front-end designs |
| Stable cross-modulation performance | 105 dBµV Xmod at 40 dB AGC - ensures co-channel interference rejection in dense broadcast environments |
Applications
| Digital TV Tuner IF Amplifier | Analog TV Tuner RF Front-End |
|---|---|
Use Scenario: Amplifying intermediate frequency signals (38–45 MHz) after mixer stage in DVB-T/C/S receivers with dynamic AGC. IC Role / Device Role / Timing Role: Low-noise, gain-controlled amplifier with Gate 2 accepting analog AGC voltage to maintain constant output amplitude. Use Value: 1.0 dB noise figure preserves weak-signal sensitivity; 105 dBµV Xmod prevents ghosting and intermodulation in multi-channel urban reception. |
Use Scenario: First-stage RF amplification in PAL/NTSC broadcast tuners operating at 47–862 MHz with 5 V supply. IC Role / Device Role / Timing Role: Dual-gate VHF/UHF amplifier where Gate 1 receives antenna signal and Gate 2 applies variable bias for channel-selective gain control. Use Value: 28 mS |yfs| enables >15 dB small-signal gain; SOT343R package allows dense layout in miniature tuner cans. |
| Professional UHF Wireless Microphone Receiver | Land Mobile Radio (LMR) Transceiver IF Stage |
Use Scenario: IF amplification in 470–698 MHz wireless mic receivers requiring wide dynamic range and low distortion. IC Role / Device Role / Timing Role: Gain-stable amplifier with Gate 2 driven by RSSI-derived AGC to handle >100 dB input range without clipping. Use Value: Verified 1.8 dB max noise figure up to 800 MHz ensures voice clarity; internal self-biasing maintains DC quiescent point across temperature. |
Use Scenario: Fixed-gain IF amplifier (45 MHz) in TETRA/DMR base stations where EMI immunity and long-term reliability are critical. IC Role / Device Role / Timing Role: High-linearity, low-drift amplifier with source-substrate tie minimizing parasitic capacitance drift over time. Use Value: 150 °C Tj rating supports 24/7 operation in enclosed base station cabinets; 200 mW Ptot accommodates burst-mode transmission peaks. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-gate RF amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BF1201R | SOT143R package (larger footprint, Rth j-s = 185 K/W); same electrical specs but higher thermal resistance | Better suited for prototyping or lower-power IF stages where PCB real estate permits larger outline | Select when thermal margin is less constrained and legacy SOT143R layout exists |
| MRF901 | Single-gate GaAs FET; 0.6 dB Fmin at 400 MHz but no integrated AGC path - requires external bias network | Used in ultra-low-noise receive chains where AGC is implemented digitally post-LNA | Choose only if system-level AGC is handled externally and sub-1 dB noise is mandatory |
Compared with BF1201R and MRF901, the BF1201WR uniquely combines SOT343R miniaturization, dual-gate AGC integration, and 1.0 dB noise performance - making it optimal for space-constrained, analog-controlled VHF/UHF tuners requiring production-ready simplicity and proven cross-modulation immunity.
Availability
BF1201WR is available at Aetrix Electronics and suitable for digital television tuners, analog broadcast receivers, professional wireless microphone systems, and land mobile radio IF amplifiers requiring stable component supply across extended production lifecycles.
Supply support for BF1201WR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor leader specializing in high-performance RF, analog, and mixed-signal solutions for consumer, industrial, and communications markets.
The BF1201WR belongs to NXP's legacy PoLo MOSFET family, engineered specifically for low-noise, gain-controlled amplification in VHF/UHF broadcast and professional radio equipment - emphasizing AGC stability, cross-modulation immunity, and compact packaging.
FAQ
What is the maximum drain-source voltage rating for BF1201WR?
The BF1201WR has a maximum drain-source voltage (VDS) rating of 10 V, as specified in the Absolute Maximum Ratings table. This limit ensures safe operation under transient RF voltage swings in 5 V supply applications such as TV tuner IF amplifiers. Exceeding this value risks permanent device failure due to avalanche breakdown.
How does BF1201WR achieve stable AGC performance without external bias components?
The BF1201WR incorporates a partly internal self-biasing circuit that stabilizes the DC operating point during AGC modulation. This design, combined with its dual-gate PoLo structure, maintains consistent cross-modulation performance (e.g., 105 dBµV at 40 dB AGC) without requiring external resistors or capacitors - reducing bill-of-materials and PCB area in tuner modules.
Is BF1201WR pin-compatible with BF1201 or BF1201R?
No, BF1201WR is not pin-compatible with BF1201 or BF1201R. While all three share identical pin functions (Source, Drain, Gate 2, Gate 1), BF1201WR uses SOT343R with reverse pinning (1–2–4–3 top view), whereas BF1201 uses SOT143B (1–2–3–4) and BF1201R uses SOT143R (1–2–4–3 but different mechanical dimensions). Layout redesign is required for substitution.
What is the typical noise figure of BF1201WR at 800 MHz?
The BF1201WR exhibits a typical noise figure of 1.9 dB at 800 MHz, as documented in the Dynamic Characteristics table under "F" parameter. This value is measured with YS = YS opt, confirming its suitability for UHF wireless microphone and LTE band reception where low-noise amplification above 600 MHz is essential.
Can BF1201WR be used in automotive tuner applications?
The BF1201WR is not automotive-qualified per NXP's disclaimer on non-automotive products. It lacks AEC-Q100 qualification, automotive-grade temperature cycling validation, and extended lifetime testing. For automotive infotainment tuners, NXP recommends qualified alternatives like the BGU7005 - the BF1201WR should only be used in industrial or consumer-grade equipment.
BF1201WR,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- SC-82A, SOT-343
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N-Channel Dual Gate
- Frequency:
- 400MHz
- Gain:
- 29dB
- Voltage - Test:
- 5 V
- Current Rating (Amps):
- 30mA
- Noise Figure:
- 1dB
- Current - Test:
- 15 mA
- Power - Output:
- -
- Voltage - Rated:
- 10 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- CMPAK-4
BF1201WR,115 FAQ
1.How can I place an order for BF1201WR,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for BF1201WR,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BF1201WR,115 reliable?
The price and inventory of BF1201WR,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BF1201WR,115 is usually 5 days.
3.What payment methods are accepted for BF1201WR,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BF1201WR,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BF1201WR,115?
BF1201WR,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BF1201WR,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BF1201WR,115?
For technical support, including BF1201WR,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BF1201WR,115 requirements.
6.How does Aetrix verify that BF1201WR,115 is sourced from the original manufacturer or authorized distributors?
All BF1201WR,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BF1201WR,115 meets industry standards.
7.What is the process for return or replacement of BF1201WR,115?
All BF1201WR,115 units undergo pre-shipment inspection (PSI). If there is an issue with BF1201WR,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BF1201WR,115 part is unused and in its original packaging.
Return procedure for BF1201WR,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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