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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs

NXP Semiconductors BF1202,215

Name: BF1202,215
Brand: NXP Semiconductors
SKU: BF1202,215
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BF1202,215

Manufacturer:: NXP Semiconductors

Category:: Single FETs, MOSFETs

Package:: TO-253-4, TO-253AA

Datasheet:: BF1202,215.pdf

Description:: RF MOSFET 5V SOT143B

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BF1202,215 from NXP Semiconductors is an enhancement-type N-channel dual-gate PoLo MOSFET with source-substrate interconnection, optimized for low-noise VHF/UHF RF amplification in 3–9 V tuner applications. It delivers 30 mS typical forward transfer admittance, 1.7 pF input capacitance at gate 1, and 1.1 dB noise figure at 800 MHz, enabling high-gain, low-distortion signal amplification in digital/analogue TV tuners.

For engineers reviewing the BF1202,215 datasheet, BF1202,215 pinout, BF1202,215 application, or BF1202,215 equivalent, key selection criteria include its dual-gate AGC control capability, cross-modulation performance (100–105 dBµV at 40 dB AGC), thermal resistance (185 K/W), and SOT143B package compatibility with high-frequency PCB layout requirements.

Technical Context

This device uses a short-channel dual-gate structure with integrated protection diodes between gates and source to withstand input voltage surges. Its partly internal self-biasing circuit ensures stable DC operating point and consistent cross-modulation performance under automatic gain control (AGC) conditions.

The BF1202,215 operates as a low-noise gain-controlled amplifier with gate 2 (VG2-S = 4 V) serving as the primary bias control terminal and gate 1 (VG1-S(th) = 0.3–1.0 V) functioning as the RF input node. Its 15–30 fF reverse transfer capacitance minimizes feedback instability in tuned amplifier stages up to 1 GHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	10 V maximum - defines safe drain-source voltage swing in RF amplifier stages without breakdown.
\|y_fs\|	30 mS typical - enables high small-signal gain in narrowband VHF/UHF amplifiers with minimal external bias complexity.
C_ig1-ss	1.7 pF typical - low gate-1 input capacitance preserves Q-factor in resonant tank circuits at 400–800 MHz.
F	1.1 dB typical at 800 MHz - meets stringent noise floor requirements for terrestrial and cable TV front-end LNA stages.
Xmod	100–105 dBµV at 40 dB AGC - quantifies strong interference rejection in multi-channel broadcast reception under dynamic gain control.
R_{th j-s}	185 K/W - determines junction-to-solder-point thermal rise under 200 mW dissipation, critical for reliability in compact tuner modules.
T_j	150 °C maximum - sets upper limit for continuous operation in sealed consumer electronics enclosures.

Pinout & Package

BF1202,215 is housed in the SOT143B plastic surface-mounted package (3.0 × 1.4 × 1.1 mm), optimized for RF layout with short lead inductance and controlled parasitic coupling.

Pin/Terminal	Circuit Role	Design Meaning
1	Source	Common reference node for both gates and drain; internally connected to substrate - requires low-inductance RF ground return path.
2	Drain	RF output node; connects to tuned collector load or interstage coupling network - must avoid parasitic resonance via proper pad geometry.
3	Gate 2	DC bias control terminal; sets quiescent current and gain level - typically fed via high-impedance resistor for AGC voltage injection.
4	Gate 1	RF input terminal; isolated from gate 2 by channel depletion - accepts low-level antenna signals with minimal added noise.

Key Features

Feature	Design Value
Dual-gate architecture with internal self-biasing	Stabilizes DC operating point across temperature and process variation, reducing need for external bias trimming in mass-produced tuners.
Integrated gate-source protection diodes	Prevents ESD damage during handling and board assembly without requiring external transient suppressors on RF input lines.
Low C_rss (15–30 fF)	Minimizes Miller effect and improves unconditional stability in common-source amplifier configurations up to 1 GHz.
High \|y_fs\|/C_ig1-ss ratio	Delivers superior gain-per-capacitance metric - critical for achieving wide bandwidth and high selectivity in miniature IF/RF filters.
1.1 dB noise figure at 800 MHz	Enables reception of weak digital TV signals in fringe coverage areas while maintaining BER compliance per DVB-T standards.

Applications

Digital TV Tuner Front-End	Analogue TV Tuner IF Amplifier
Use Scenario: Amplifying weak UHF terrestrial broadcast signals before demodulation in set-top boxes and integrated TVs. IC Role / Device Role / Timing Role: Low-noise RF amplifier with AGC-controlled gain staging using gate 2 voltage modulation. Use Value: Achieves 105 dBµV cross-modulation threshold at 40 dB AGC, ensuring co-channel interference immunity in dense urban RF environments.	Use Scenario: Boosting intermediate frequency (IF) signals in legacy analogue TV receivers with variable gain control. IC Role / Device Role / Timing Role: Dual-gate gain-controlled amplifier where gate 1 receives IF input and gate 2 adjusts system sensitivity dynamically. Use Value: Maintains <1.8 dB noise figure across 30–50 MHz IF band, preserving SNR in NTSC/PAL video signal recovery.
Professional VHF Communications Receiver	UHF Wireless Microphone Preamp
Use Scenario: First-stage amplification in portable two-way radios operating at 136–174 MHz with battery-powered AGC. IC Role / Device Role / Timing Role: Low-power, low-noise front-end transistor with gate 2 driven by analog AGC loop for wide dynamic range. Use Value: Delivers 34.5 dB power gain at 200 MHz with only 12 mA quiescent current - extends battery life without sacrificing sensitivity.	Use Scenario: Input stage in compact UHF wireless microphone transmitters (470–698 MHz) requiring ultra-low distortion. IC Role / Device Role / Timing Role: High-linearity RF amplifier with dual-gate isolation preventing oscillator pulling and harmonic generation. Use Value: Enables >100 dBµV cross-modulation threshold at 50 MHz offset, meeting ETSI EN 300 422 spectral purity requirements.

Digital TV Tuner Front-End

Analogue TV Tuner IF Amplifier

Use Scenario: Amplifying weak UHF terrestrial broadcast signals before demodulation in set-top boxes and integrated TVs.

IC Role / Device Role / Timing Role: Low-noise RF amplifier with AGC-controlled gain staging using gate 2 voltage modulation.

Use Value: Achieves 105 dBµV cross-modulation threshold at 40 dB AGC, ensuring co-channel interference immunity in dense urban RF environments.

Use Scenario: Boosting intermediate frequency (IF) signals in legacy analogue TV receivers with variable gain control.

IC Role / Device Role / Timing Role: Dual-gate gain-controlled amplifier where gate 1 receives IF input and gate 2 adjusts system sensitivity dynamically.

Use Value: Maintains <1.8 dB noise figure across 30–50 MHz IF band, preserving SNR in NTSC/PAL video signal recovery.

Professional VHF Communications Receiver

UHF Wireless Microphone Preamp

Use Scenario: First-stage amplification in portable two-way radios operating at 136–174 MHz with battery-powered AGC.

IC Role / Device Role / Timing Role: Low-power, low-noise front-end transistor with gate 2 driven by analog AGC loop for wide dynamic range.

Use Value: Delivers 34.5 dB power gain at 200 MHz with only 12 mA quiescent current - extends battery life without sacrificing sensitivity.

Use Scenario: Input stage in compact UHF wireless microphone transmitters (470–698 MHz) requiring ultra-low distortion.

IC Role / Device Role / Timing Role: High-linearity RF amplifier with dual-gate isolation preventing oscillator pulling and harmonic generation.

Use Value: Enables >100 dBµV cross-modulation threshold at 50 MHz offset, meeting ETSI EN 300 422 spectral purity requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-gate MOSFET amplifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BF1202R,215	SOT143R package with reversed pinning (1=source, 2=drain, 4=gate2, 3=gate1); identical electrical specs.	Requires PCB layout revision due to swapped gate/drain terminals - not drop-in compatible.	Select when redesigning for improved thermal relief or existing SOT143R footprint reuse.
BF1202WR,215	SOT343R package; lower R_{th j-s} (155 K/W vs. 185 K/W); same electrical parameters.	Better thermal performance allows higher ambient operation in sealed enclosures but demands tighter placement tolerance.	Choose for space-constrained designs needing enhanced power dissipation margin at 200 mW.

Compared with BF1202,215, the BF1202R,215 offers identical RF performance in a mechanically distinct SOT143R outline, while BF1202WR,215 provides superior thermal resistance in the smaller SOT343R footprint - both require layout adaptation but enable direct functional replacement in VHF/UHF tuner designs.

Availability

BF1202,215 is available at Aetrix Electronics and suitable for digital television tuners, professional communications receivers, and UHF wireless microphone preamplifiers requiring stable component supply and long-term production continuity.

Supply support for BF1202,215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global leader in high-performance RF, analog, and mixed-signal semiconductors, with core expertise in secure connectivity and power-efficient interface solutions.

The BF1202,215 belongs to NXP's legacy PoLo (Polarity Logic) dual-gate MOSFET product line, specifically engineered for low-noise, high-gain RF amplification in broadcast and professional VHF/UHF receiver front-ends.

FAQ

What is the maximum drain-source voltage rating for BF1202,215?

The BF1202,215 has a maximum drain-source voltage (V_DS) rating of 10 V, as specified in the Absolute Maximum Ratings table. This value defines the upper limit for safe DC and peak RF voltage swing across the drain and source terminals without risking device breakdown. Exceeding this voltage may cause permanent damage to the BF1202,215.

Does BF1202,215 require external bias resistors for gate 1 and gate 2?

Yes, the BF1202,215 requires external biasing: gate 2 (pin 3) is typically biased with a high-impedance resistor to set quiescent current, while gate 1 (pin 4) is AC-coupled and DC-grounded via a resistor to establish proper input impedance. The datasheet shows RG1 = 120 kΩ connected to VGG in test circuits, confirming external bias network necessity for stable BF1202,215 operation.

What is the noise figure of BF1202,215 at 400 MHz?

The BF1202,215 exhibits a typical noise figure of 0.9 dB at 400 MHz under specified conditions (V_DS = 5 V, V_G2-S = 4 V, I_D = 12 mA, Y_S = Y_{S opt}). This value is confirmed in the Dynamic Characteristics table on page 4 of the official NXP datasheet and reflects the BF1202,215's suitability for high-sensitivity VHF/UHF receiver front-ends.

Can BF1202,215 be used in automotive applications?

No, the BF1202,215 is not automotive-qualified. Per NXP's disclaimer on page 14, unless explicitly stated as automotive qualified, the device is unsuitable for safety-critical or life-support systems. The BF1202,215 lacks AEC-Q101 qualification, temperature cycling validation, and automotive-grade traceability - it is intended for consumer and professional communications equipment only.

What package type is used for BF1202,215?

The BF1202,215 is packaged in the SOT143B plastic surface-mounted case (3.0 × 1.4 × 1.1 mm), as confirmed in the "DESCRIPTION" section and Package Outlines drawing on page 10 of the NXP datasheet. This outline features standard pinning (1=source, 2=drain, 3=gate2, 4=gate1) and is distinct from the SOT143R and SOT343R variants used for BF1202R,215 and BF1202WR,215.

BF1202,215 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: -

Package/Case:: TO-253-4, TO-253AA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Technology:: MOSFET (Metal Oxide)

Configuration:: N-Channel Dual Gate

Frequency:: 400MHz

Gain:: 30.5dB

Voltage - Test:: 5 V

Current Rating (Amps):: 30mA

Noise Figure:: 0.9dB

Current - Test:: 12 mA

Power - Output:: -

Voltage - Rated:: 10 V

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-143B

BF1202,215 FAQ

1.How can I place an order for BF1202,215 through Aetrix?

Please submit a Request for Quotation (RFQ) for BF1202,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BF1202,215 reliable?

The price and inventory of BF1202,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BF1202,215 is usually 5 days.

3.What payment methods are accepted for BF1202,215?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BF1202,215 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BF1202,215?

BF1202,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BF1202,215 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BF1202,215?

For technical support, including BF1202,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BF1202,215 requirements.

6.How does Aetrix verify that BF1202,215 is sourced from the original manufacturer or authorized distributors?

All BF1202,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BF1202,215 meets industry standards.

7.What is the process for return or replacement of BF1202,215?

All BF1202,215 units undergo pre-shipment inspection (PSI). If there is an issue with BF1202,215, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BF1202,215 part is unused and in its original packaging.

Return procedure for BF1202,215:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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