NXP Semiconductors BF1207,115

Overview

BF1207 from NXP Semiconductors (formerly Philips) is a dual N-channel dual-gate MOSFET amplifier IC integrating two independent low-noise amplifiers (AMP A and AMP B) with shared source and gate2 terminals, plus an internal switch for AGC path control. It delivers 30 mS typical forward transfer admittance, 1.3 dB noise figure at 400 MHz (AMP A), and 105 dBµV cross-modulation input level at 40 dB AGC. It operates at 5 V supply in VHF/UHF gain-controlled LNA stages for TV tuners.

For engineers reviewing the BF1207 datasheet, BF1207 pinout, BF1207 application, or BF1207 equivalent, this page provides verified circuit role (dual-gate RF amplifier with integrated AGC switch), package mapping (SOT363), key dynamic specs (yfs, NF, Xmod), thermal resistance (240 K/W), and validated alternatives for tuner front-end design.

Technical Context

The BF1207 implements two discrete common-source dual-gate MOSFETs on one die: AMP A features fully integrated bias and targets 400 MHz operation with 1.3 dB NF; AMP B uses partly integrated bias and is optimized for 800 MHz with 1.4 dB NF. Both share substrate and source connections, enabling compact VHF/UHF front-end designs with minimal external components.

Its internal switch allows selective activation of either amplifier via VGG control (0 V or 5 V), while integrated gate-source diodes protect against ESD and input voltage surges. DC stabilization is achieved through on-chip bias circuits, ensuring stable gain control across temperature and process variation without external resistors for basic operation.

Key Specifications

Pinout & Package

SOT363 plastic surface-mounted package (6 leads, 2.2 × 1.35 mm footprint), compliant with SC-88 standard; moisture sensitivity level (MSL) not specified in source data.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-gate MOSFET amplifier applications.

Compared with BF1214,115, the BF1207 offers lower cost and proven 400 MHz performance but trades 5 mS |y_fs| and ~0.3 pF C_iss; versus BF1224,115, it provides dual-channel flexibility in half the board area despite lower power rating.

Availability

BF1207 is available at Aetrix Electronics and suitable for digital television tuners, analog broadcast receivers, and professional UHF communication equipment requiring stable component supply and long-term obsolescence management.

Supply support for BF1207 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors, formerly Philips Semiconductors, is a global leader in high-performance RF and analog semiconductor solutions for consumer, automotive, and industrial markets.

The BF1207 belongs to NXP's legacy dual-gate MOSFET amplifier product line, engineered specifically for VHF/UHF gain-controlled low-noise amplification in broadcast tuner applications with 5 V supply constraints.

FAQ

What is the primary function of the BF1207 in RF signal chains?

The BF1207 functions as a dual-channel, gain-controlled low-noise amplifier for VHF/UHF frequencies. Its two independent N-channel dual-gate MOSFETs (AMP A and AMP B) provide selectable amplification paths with shared AGC control via gate2. The BF1207 integrates bias networks and ESD protection diodes, enabling compact front-end designs in TV tuners and communication receivers without external gain-setting resistors or discrete protection devices.

How does the BF1207 achieve Automatic Gain Control (AGC) functionality?

The BF1207 implements AGC through its shared gate2 terminal: applying a variable DC voltage (0–5 V) to pin 5 modulates the transconductance of both amplifiers simultaneously. This allows continuous gain reduction-up to 40 dB-with minimal distortion, as confirmed by cross-modulation measurements showing 105 dBµV input level at 40 dB AGC for AMP A. The internal bias circuits stabilize DC operating points across temperature, ensuring predictable AGC response without external feedback loops.

What are the thermal limitations of the BF1207 in SOT363 packaging?

The BF1207 has a thermal resistance R_th(j-sp) of 240 K/W from junction to soldering point, with a maximum total power dissipation of 180 mW at T_sp ≤107 °C. This means a 100 mW dissipation causes ~24 °C junction-to-solder-point rise. Designers must ensure adequate PCB copper area under pin 2 (source) and maintain ambient temperature below 75 °C to keep junction temperature within the 150 °C absolute maximum. Derating curves in the datasheet confirm linear power reduction above 107 °C solder point temperature.

Can the BF1207 be used in both VHF and UHF frequency bands?

Yes-the BF1207 is characterized for dual-band operation: AMP A is optimized for 400 MHz (1.3 dB NF, 34 dB power gain at 400 MHz), while AMP B targets 800 MHz (1.4 dB NF, 31 dB power gain at 800 MHz). Scattering parameter tables confirm usable s21 response from 50 MHz to 1000 MHz for both amplifiers. Its low C_iss(G1) (1.9–2.2 pF) and high y_fs/C_iss ratio support broadband matching, making the BF1207 suitable for tuners spanning 45–862 MHz without redesign.

Is the BF1207 pin-compatible with other dual-gate MOSFETs in the BF12xx family?

The BF1207 shares the SOT363 package and identical pinout (pin 1 = DA, pin 2 = S, pin 3 = DB, pin 4 = G1B, pin 5 = G2, pin 6 = G1A) with BF1214,115 and BF1205,115. Electrical compatibility is confirmed: all specify V_DS = 6 V, I_D = 30 mA, and common gate2 AGC control. However, BF1224,115 uses SOT143 packaging and different pin assignment, so it is not pin-compatible despite functional similarity.