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NXP Semiconductors BF1211WR,115
- Part No.:
- BF1211WR,115
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- SC-82A, SOT-343
- Datasheet:
-
BF1211WR,115.pdf
- Description:
- RF MOSFET 5V CMPAK-4
- Quantity:
- Payment:
- Shipping:
Inventory:4,472
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Product details
Overview
BF1211WR from NXP Semiconductors is an enhancement-type N-channel dual-gate MOSFET with source and substrate internally connected, designed for low-noise VHF/UHF RF amplification in 5 V TV tuner front-ends. It delivers 30 mS typical forward transfer admittance, 2.1 pF input capacitance at gate 1, and 0.9 dB noise figure at 400 MHz - enabling high-gain, low-distortion signal amplification in analog/digital television receivers.
For engineers reviewing the BF1211WR datasheet, BF1211WR pinout, BF1211WR application, or BF1211WR equivalent, key selection considerations include its SOT343R package with reverse pinning, internal gate-source diodes for surge protection, cross-modulation performance at 40 dB AGC (100–105 dBµV), and thermal resistance of 155 K/W from junction to soldering point.
Technical Context
The BF1211WR operates as a gain-controlled RF amplifier using dual independent gates: gate 2 (G2) sets DC bias and channel conduction level, while gate 1 (G1) accepts the RF input signal and enables AGC-driven gain reduction. Its short-channel structure optimizes the yfs/Cig1-ss ratio for wideband VHF/UHF operation up to 1 GHz.
Integrated diodes between each gate and source provide ESD and voltage-surge protection without external components. The device features partly internal self-biasing to stabilize DC operating point during AGC transients and suppress cross-modulation - critical for multi-channel TV tuner linearity under strong adjacent-channel interference.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Drain-source voltage (VDS) | 6 V maximum - defines safe DC supply headroom for 5 V tuner applications with margin. |
| Drain current (ID) | 30 mA maximum - supports stable small-signal amplification with sufficient headroom for AGC-induced current swing. |
| Forward transfer admittance (|yfs|) | 30 mS typical at 25 °C - directly determines small-signal voltage gain in common-source configuration. |
| Noise figure (F) | 0.9 dB typical at 400 MHz - enables high sensitivity in UHF TV tuners where low-noise front-end performance is critical. |
| Cross-modulation (Xmod) | 100–105 dBµV at 40 dB AGC - quantifies immunity to intermodulation distortion when strong off-channel signals are present. |
| Input capacitance (Cig1-ss) | 2.1 pF typical at 1 MHz - sets input matching network complexity and bandwidth limitation in VHF/UHF designs. |
| Junction temperature (Tj) | 150 °C maximum - constrains PCB thermal design and power derating above Ts = 122 °C. |
| Thermal resistance (Rth(j-s)) | 155 K/W - defines temperature rise from junction to source soldering point under 180 mW dissipation. |
Pinout & Package
BF1211WR is housed in the SOT343R plastic surface-mounted package (4 leads, reverse pinning), measuring 2.2 × 1.35 × 0.9 mm (L × W × H). Pin numbering follows top-view orientation with pin 1 at bottom-left corner.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Source | Common reference node for both gates and drain; internally tied to substrate - requires low-impedance RF ground connection. |
| 2 | Drain | RF output node; connects to tuned load or next-stage input; must be decoupled from DC supply via RF choke or capacitor. |
| 3 | Gate 2 | Bias control terminal; sets DC operating point and channel conductivity - typically fed via resistor from 5 V supply. |
| 4 | Gate 1 | RF input terminal; accepts modulated VHF/UHF signal; protected by integrated G1–S diode against ESD and overvoltage. |
Key Features
| Feature | Design Value |
|---|---|
| Short-channel architecture | Optimizes yfs/Cig1-ss ratio for high gain-bandwidth product in 50–800 MHz TV tuner bands. |
| Internal gate-source diodes | Protects Gate 1 and Gate 2 from ±10 mA transient currents - eliminates need for external ESD clamps in tuner modules. |
| Partly internal self-biasing | Stabilizes quiescent drain current during AGC voltage changes - maintains consistent cross-modulation performance across 0–40 dB AGC range. |
| Low-frequency noise performance | 3.5 dB noise figure at 11 MHz - supports robust IF-stage amplification and digital demodulator sensitivity in hybrid TV architectures. |
| Reverse-pinned SOT343R package | Enables direct drop-in replacement for BF1211R in existing layouts with modified trace routing - avoids redesign when upgrading to lower Rth(j-s). |
Applications
| Analog TV Tuner Front-End | Digital Terrestrial TV (DTTV) Tuner |
|---|---|
|
Use Scenario: Amplifying weak VHF/UHF broadcast signals before downconversion in legacy analog TV receivers. IC Role / Device Role / Timing Role: Low-noise RF amplifier stage with AGC-controlled gain using Gate 2 voltage modulation. Use Value: 0.9 dB noise figure at 400 MHz and 100 dBµV cross-modulation level ensure clear picture quality under weak-signal and co-channel interference conditions. |
Use Scenario: First-stage LNA in DTTV tuners compliant with DVB-T/T2 standards operating up to 862 MHz. IC Role / Device Role / Timing Role: Dual-gate gain-controlled amplifier providing stable small-signal gain across 47–862 MHz band with minimal group delay variation. Use Value: 29 dB power gain at 400 MHz and 24 dB at 800 MHz enable single-stage amplification without cascaded stages - reducing BOM count and board area. |
| CATV Set-Top Box Tuner | FM Radio Front-End |
|
Use Scenario: Channel-selective amplification in cable TV set-top boxes handling 54–1002 MHz spectrum with high adjacent-channel rejection. IC Role / Device Role / Timing Role: Gain-stable RF amplifier with Gate 2 biasing for flat frequency response and low intermodulation distortion. Use Value: 15–30 fF reverse transfer capacitance minimizes feedback path coupling - preserving stability and preventing oscillation in broadband CATV designs. |
Use Scenario: Low-noise pre-amplifier in portable FM radio receivers covering 76–108 MHz band with battery-powered 5 V supply. IC Role / Device Role / Timing Role: High-yfs (30 mS) RF amplifier optimized for low-voltage, low-current operation with minimal power consumption. Use Value: 11–19 mA drain current at VG2-S = 4 V and VDS = 5 V enables >15 dB gain with <10 mW DC power - extending battery life in handheld devices. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-gate MOSFET amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BF1211R | SOT143R package (larger footprint, 185 K/W Rth(j-s)); identical electrical specs and pinout reversal vs. BF1211. | Same VHF/UHF tuner use but higher thermal resistance limits power handling in compact layouts. | Select BF1211R only when legacy SOT143R land pattern is fixed and thermal margin exceeds 155 K/W requirement. |
| BF1211 | SOT143B package (standard pinning: 1=source, 2=drain, 3=gate1, 4=gate2); same core specs but no reverse pinning. | Requires PCB layout change due to gate 1/gate 2 position swap - not drop-in compatible with BF1211WR. | Choose BF1211 only for new designs where standard pinout simplifies routing and thermal management allows 185 K/W. |
Compared with BF1211 and BF1211R, the BF1211WR offers superior thermal performance (155 K/W) in the smallest footprint (SOT343R), making it optimal for space-constrained, high-density TV tuner modules requiring stable gain and low noise across full UHF band.
Availability
BF1211WR is available at Aetrix Electronics and suitable for analog/digital television tuners, DTTV receiver front-ends, and FM radio amplifiers requiring stable component supply, long-term lifecycle support, and guaranteed traceable sourcing.
Supply support for BF1211WR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company specializing in high-performance RF, analog, and mixed-signal solutions for consumer, automotive, and industrial markets.
The BF1211WR belongs to NXP's legacy dual-gate MOSFET product line, engineered specifically for low-noise, gain-controlled RF amplification in 5 V broadcast tuner applications - emphasizing noise figure, cross-modulation suppression, and thermal efficiency.
FAQ
What is the maximum drain-source voltage rating for BF1211WR?
The BF1211WR has a maximum drain-source voltage (VDS) rating of 6 V, as specified in the Absolute Maximum Ratings table. This rating applies under continuous DC conditions and ensures safe operation in 5 V TV tuner supply rails with adequate margin. Exceeding this voltage risks permanent device failure due to avalanche breakdown.
Does BF1211WR require external ESD protection on its gate terminals?
No, the BF1211WR integrates diodes between each gate (G1 and G2) and the source terminal, providing built-in protection against electrostatic discharge and input voltage surges. These diodes clamp transient currents up to ±10 mA, eliminating the need for external ESD components in standard tuner implementations per the datasheet design guidance.
How does the BF1211WR achieve stable cross-modulation performance during AGC operation?
The BF1211WR uses a partly internal self-biasing circuit that dynamically stabilizes the DC operating point as Gate 2 voltage changes during AGC. This prevents shifts in drain current and transconductance that would otherwise degrade cross-modulation (Xmod) - maintaining 100–105 dBµV performance even at 40 dB AGC, as verified in the Quick Reference Data table.
What is the thermal resistance from junction to soldering point for BF1211WR?
The BF1211WR has a thermal resistance (Rth(j-s)) of 155 K/W from junction to soldering point, measured at Ts ≤ 122 °C. This value is lower than the BF1211 and BF1211R (185 K/W), enabling higher power dissipation or cooler operation in thermally constrained tuner modules using the SOT343R package.
Can BF1211WR be used as a direct replacement for BF1211 in an existing PCB layout?
No, BF1211WR cannot be used as a direct replacement for BF1211 because it uses reverse pinning (SOT343R) versus BF1211's standard SOT143B pinout: pins 3 and 4 are swapped (G2/G1 order reversed). Attempting substitution without layout modification will result in incorrect gate connections and functional failure. BF1211WR is pin-compatible only with BF1211R, not BF1211.
BF1211WR,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- SC-82A, SOT-343
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N-Channel Dual Gate
- Frequency:
- 400MHz
- Gain:
- 29dB
- Voltage - Test:
- 5 V
- Current Rating (Amps):
- 30mA
- Noise Figure:
- 0.9dB
- Current - Test:
- 15 mA
- Power - Output:
- -
- Voltage - Rated:
- 6 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- CMPAK-4
BF1211WR,115 FAQ
1.How can I place an order for BF1211WR,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for BF1211WR,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BF1211WR,115 reliable?
The price and inventory of BF1211WR,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BF1211WR,115 is usually 5 days.
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BF1211WR,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BF1211WR,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BF1211WR,115?
For technical support, including BF1211WR,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BF1211WR,115 requirements.
6.How does Aetrix verify that BF1211WR,115 is sourced from the original manufacturer or authorized distributors?
All BF1211WR,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BF1211WR,115 meets industry standards.
7.What is the process for return or replacement of BF1211WR,115?
All BF1211WR,115 units undergo pre-shipment inspection (PSI). If there is an issue with BF1211WR,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BF1211WR,115 part is unused and in its original packaging.
Return procedure for BF1211WR,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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