NXP Semiconductors BF1215,115

Overview

BF1215 from NXP Semiconductors is a dual N-channel dual-gate MOSFET RF amplifier IC integrating two independent gain-controlled amplifiers (A and B) with shared source and gate2 terminals, plus an internal switch enabling AGC-controlled channel selection in VHF/UHF tuners. It delivers 1.5 dB noise figure at 400 MHz, 27 mS forward transfer admittance, and 107 dBμV cross-modulation performance at 40 dB AGC, operating from a 5 V supply.

For engineers reviewing the BF1215 datasheet, BF1215 pinout, BF1215 application, or BF1215 equivalent, this page provides verified package mapping (SOT363), confirmed dual-amplifier functional partitioning, AGC-dependent cross-modulation metrics, thermal resistance (240 K/W), and validated alternative options for VHF tuner front-end design.

Technical Context

The BF1215 implements two discrete dual-gate MOSFETs sharing substrate and source connections, with gate2 biased jointly to enable synchronized gain control. Amplifier A uses full internal bias while amplifier B employs partial internal bias, allowing independent DC stabilization and distinct AGC response curves.

Its integrated switch routes control voltage (VGG) to select active amplifier: VGG = 0 V enables amplifier A and disables B; VGG = 5 V enables B and disables A. Protection diodes between each gate and source suppress input voltage surges, and the shared-source configuration minimizes layout parasitics critical for VHF/UHF matching.

Key Specifications

Pinout & Package

Package: SOT363 - plastic surface-mounted package with 6 leads, 2.2 mm × 1.8 mm footprint, 1.15 mm height, and 0.65 mm lead pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-gate MOSFET amplifier applications.

Compared with BF998,115 and MRF901T1, the BF1215 uniquely integrates dual amplifiers with shared AGC control and internal switching-enabling compact, low-component-count VHF tuner designs without sacrificing cross-modulation immunity or noise figure.

Availability

BF1215 is available at Aetrix Electronics and suitable for digital television tuners, professional VHF radio receivers, analog TV upgrade modules, and spectrum monitoring equipment requiring stable component supply and consistent RF performance across production batches.

Supply support for BF1215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer applications.

The BF1215 belongs to NXP's RF transistor product line, engineered specifically for high-linearity, low-noise VHF/UHF signal amplification in broadcast and communication tuner front-ends.

FAQ

What is the maximum drain-source voltage rating for the BF1215?

The BF1215 has a maximum drain-source voltage (V_DS) rating of 6 V per MOSFET, as specified in Table 5 (Limiting Values) of the NXP datasheet. This rating applies under DC conditions and ensures safe operation with standard 5 V supply rails while accommodating transient voltage spikes common in RF front-end circuits. Exceeding 6 V risks permanent device damage.

How does the internal switch in the BF1215 select between amplifier A and amplifier B?

The BF1215 uses the VGG control voltage applied to the shared gate2 terminal to select amplifiers: when VGG = 0 V, amplifier A is enabled and amplifier B is disabled; when VGG = 5 V, amplifier B is enabled and amplifier A is disabled. This function is confirmed in Figure 2 (Functional Diagram) and Section 7 (Static Characteristics) of the datasheet, where IDS measurements show active current only in the selected amplifier path.

What is the typical noise figure of the BF1215 at 800 MHz?

The BF1215 achieves a typical noise figure of 1.9 dB at 800 MHz under optimal source admittance (Y_S = Y_S(opt)), as documented in Table 1 (Quick Reference Data) and Table 8 (Dynamic Characteristics). This value reflects its suitability for UHF-band extensions of VHF tuner architectures, though its primary optimization remains in the VHF range (30–300 MHz).

Does the BF1215 require external bias components for basic operation?

Amplifier A includes full internal bias, eliminating external gate resistors; amplifier B uses partial internal bias and requires an external resistor (RG1 = 39 kΩ recommended) connected between gate1(B) and VGG, as shown in Figure 2 and confirmed in Table 7 (Static Characteristics). No external drain or source biasing is needed beyond the 5 V supply and RF coupling capacitors.

What package type is used for the BF1215 and what are its key mechanical dimensions?

The BF1215 is housed in a SOT363 plastic surface-mounted package (also known as SC-88), measuring 2.2 mm × 1.8 mm with a maximum height of 1.15 mm and 0.65 mm lead pitch. These dimensions are defined in Figure 34 (Package Outline) and Table 10 of the NXP datasheet, ensuring compatibility with standard high-density RF PCB assembly processes.