NXP Semiconductors BF1216,115

Overview

BF1216,115 from NXP Semiconductors is a dual N-channel dual-gate MOSFET amplifier IC in SOT363 package, integrating two independent low-noise gain-controlled amplifiers with shared source and gate2 terminals. It delivers 27 mS typical forward transfer admittance at 100 MHz, 1.0 dB noise figure at 400 MHz, and 107 dBμV cross modulation performance at 40 dB AGC - optimized for VHF/UHF tuner front-ends operating at 5 V.

For engineers reviewing the BF1216,115 datasheet, BF1216,115 pinout, BF1216,115 application, or BF1216,115 equivalent, this device is selected for high-linearity, low-noise RF amplification where AGC stability, input capacitance control (2.5 pF at gate1), and thermal resistance (240 K/W) are critical in compact 5 V tuner designs.

Technical Context

The BF1216,115 implements two discrete dual-gate MOSFETs (Amplifier A and B) sharing substrate and source connections, enabling synchronized AGC response and minimizing inter-channel interference. Internal bias circuits stabilize DC operating points across temperature, while integrated gate-source diodes protect against ±10 mA gate transients.

Each amplifier operates with gate1 as RF input, gate2 as AGC control, and drain as output - supporting common-source configuration with 5 V supply. Its 2.5 pF gate1 input capacitance and 25 fF reverse transfer capacitance suppress Miller effect, preserving bandwidth up to 1 GHz per S-parameter data.

Key Specifications

Pinout & Package

SOT363 plastic surface-mounted package (6 leads); dimensions: 2.2 × 1.35 × 1.15 mm (L × W × H), pitch 0.65 mm, lead count 6, moisture sensitivity level MSL3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-gate MOSFET amplifier applications.

Compared with BF1216,115, BF1215,115 provides identical per-amplifier performance but lacks channel integration, while MRF9011LT1G offers higher output power but requires full redesign of AGC implementation and matching networks.

Availability

BF1216,115 is available at Aetrix Electronics and suitable for digital/analog television tuners, professional UHF communication receivers, and portable broadcast monitoring equipment requiring stable component supply and long-term obsolescence management.

Supply support for BF1216,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer markets.

The BF1216,115 belongs to NXP's legacy RF transistor product line, designed specifically for high-performance, low-noise VHF/UHF amplifier applications in broadcast and communications equipment.

FAQ

What is the maximum drain-source voltage rating for BF1216,115?

The BF1216,115 has a maximum drain-source voltage (V_DS) rating of 6 V, as specified in Table 5 (Limiting Values). This rating applies per MOSFET and ensures safe operation with standard 5 V supply rails plus transient margin. Exceeding 6 V risks permanent breakdown of the N-channel structure.

How does the shared gate2 terminal function in BF1216,115?

In BF1216,115, Pin 2 (gate2) is internally connected to both amplifiers' second gates, enabling synchronized automatic gain control. Applying a single AGC voltage to this pin simultaneously modulates transconductance in both channels, maintaining channel balance during signal level changes - critical for dual-tuner architectures.

Is BF1216,115 suitable for 800 MHz UHF applications?

Yes, BF1216,115 is validated for 800 MHz operation: its noise figure remains 1.5 dB, transducer power gain is 26 dB, and cross modulation reaches 107 dBμV at 40 dB AGC per Table 8. These parameters meet requirements for DVB-T2 and ATSC 3.0 UHF tuner front-ends.

What thermal derating applies to BF1216,115 at elevated temperatures?

BF1216,115 exhibits linear thermal derating above T_sp = 107 °C, with R_th(j-sp) = 240 K/W. At 125 °C solder point temperature, allowable power dissipation drops to approximately 105 mW (calculated as 180 mW × (1 − (125−107)/240)), requiring careful PCB copper area design.

Does BF1216,115 require external bias resistors for normal operation?

Yes, BF1216,115 requires external gate1 biasing: Figure 17 and Table 7 specify RG1 = 39 kΩ connected to VGG = 5 V for nominal 19 mA drain current. Omitting this resistor results in undefined gate1 voltage and unstable ID, compromising noise figure and gain linearity.