NXP Semiconductors BF1217WR,115

Overview

BF1217WR from NXP Semiconductors is an N-channel dual-gate MOSFET optimized for low-noise, gain-controlled RF amplification in VHF/UHF receivers operating at 5 V supply. It delivers 27 mS forward transfer admittance at 100 MHz, 1.0 dB noise figure at 400 MHz, and −20 fF reverse transfer capacitance - enabling high selectivity and AGC linearity in tuner front-ends.

For engineers reviewing the BF1217WR datasheet, BF1217WR pinout, BF1217WR application, or BF1217WR equivalent, this device is selected for its superior cross-modulation suppression (107 dBµV at 40 dB AGC), dual-gate isolation for independent gain control, and SOT343R package compatibility with high-density RF layout requirements.

Technical Context

The BF1217WR employs a dual-gate enhancement-mode structure with source and substrate internally connected, supporting gate1 as RF input and gate2 as AGC control terminal. Its integrated gate-source diodes provide ESD protection up to ±10 mA per gate, meeting IEC 61000-4-2 Level 2 requirements without external clamping.

Dynamic performance is characterized using S-parameters at 50 Ω system impedance: s21 magnitude remains >2.64 (≈8.4 dB gain) up to 500 MHz, while s12 stays below −67 dB, confirming strong reverse isolation critical for stable multi-stage amplifier design.

Key Specifications

Pinout & Package

BF1217WR is housed in the SOT343R plastic surface-mounted package (4-lead, reverse pinning), measuring 2.2 × 1.35 × 0.95 mm with 0.65 mm lead pitch. The package supports reflow soldering per JEDEC J-STD-020 and provides thermal resistance of 240 K/W from junction to solder point.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-gate MOSFET amplifier applications.

Compared with BF998,115 and NE3210M03, the BF1217WR uniquely balances low noise, dual-gate AGC integration, and SOT343R footprint - making it the only option among the three that delivers 1.0 dB NF, 107 dBµV cross-modulation rejection, and direct 4 V AGC interface in a 2.2 mm × 1.35 mm package.

Availability

BF1217WR is available at Aetrix Electronics and suitable for digital television tuners, analog broadcast receivers, professional VHF/UHF instrumentation, and two-way radio front-ends requiring stable component supply across extended production lifecycles.

Supply support for BF1217WR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in high-performance analog, RF, and mixed-signal solutions for consumer, industrial, and communications markets.

The BF1217WR belongs to NXP's RF transistor product line, engineered specifically for high-linearity, low-noise amplification in broadcast and professional wireless receiver front-ends operating from VHF through low-UHF bands.

FAQ

What is the maximum drain-source voltage rating for the BF1217WR?

The BF1217WR has a maximum drain-source voltage (V_DS) rating of 6 V under DC conditions, as specified in Table 5 (Limiting Values). This rating provides safe operating margin for standard 5 V supply applications in tuner circuits, ensuring reliability during transient overvoltage events without breakdown.

How does the BF1217WR achieve low noise figure in VHF/UHF amplifiers?

The BF1217WR achieves a minimum noise figure of 1.0 dB at 400 MHz through optimized channel geometry and dual-gate architecture that minimizes thermal and flicker noise contributions. Its 2.5 pF input capacitance at Gate1 and 27 mS forward transfer admittance enable precise noise matching to 50 Ω sources in VHF/UHF front-end designs.

Can the BF1217WR be used in automatic gain control (AGC) circuits?

Yes, the BF1217WR is explicitly designed for AGC applications: Gate2 serves as the dedicated control terminal, with tested cross-modulation performance of 107 dBµV at 40 dB AGC. Its transfer characteristics (Figure 2) show monotonic gain reduction versus Gate2 voltage, enabling predictable analog AGC response in tuner ICs and discrete receiver stages.

What package type is used for the BF1217WR and what are its key mechanical dimensions?

The BF1217WR uses the SOT343R plastic surface-mounted package with reverse pinning (4 leads). Per Figure 18, its dimensions are 2.2 mm × 1.35 mm × 0.95 mm height, with 0.65 mm lead pitch and 0.25 mm lead thickness - compatible with standard reflow profiles and high-density RF PCB layouts.

Is ESD protection built into the BF1217WR, and what level does it support?

Yes, the BF1217WR integrates diodes between each gate and source to protect against electrostatic discharge. As stated in the caution note and Table 5, it supports ±10 mA gate current limits, providing inherent ESD robustness sufficient for handling per IEC 61000-4-2 Level 2 (4 kV contact discharge) without requiring external protection components in most tuner applications.