Infineon Technologies BF2030E6814HTSA1
- Part No.:
- BF2030E6814HTSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single FETs, MOSFETs
- Package:
- TO-253-4, TO-253AA
- Datasheet:
-
BF2030E6814HTSA1.pdf
- Description:
- RF MOSFET 5V SOT143
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
BF2030E6814HTSA1 from NXP Semiconductors is a silicon N-channel tetrode MOSFET designed for low-noise, high-gain RF input stages up to 1 GHz. It features dual gates (G1/G2), 8 V drain-source voltage rating, 40 mA continuous drain current, and 1.5 dB typical noise figure at 800 MHz - deployed in AGC-controlled front-end amplifiers for automotive radar receivers and UHF TV tuners.
For engineers reviewing the BF2030E6814HTSA1 datasheet, BF2030E6814HTSA1 pinout, BF2030E6814HTSA1 application, or BF2030E6814HTSA1 equivalent, key selection criteria include gate biasing flexibility (VG1S(p) = 0.5 V typ.), gain control range (ΔGp = 50 dB), thermal resistance (Rthchs ≤ 370 K/W), and AEC-Q101 qualification for automotive signal chain use.
Technical Context
This tetrode MOSFET uses independent gate control: G2 sets channel conduction (VG2S = 4 V typical), while G1 provides precise transconductance tuning and AGC response. Its 2.4 pF typical Cg1ss and 1.3 pF Cdss enable stable broadband matching up to 1 GHz without neutralization.
Designed for 5 V operation with Class 2 ESD protection (2000–4000 V HBM), it delivers 23 dB typical power gain at 800 MHz and supports dynamic gain adjustment via analog VG1S sweep (0–4 V), enabling >40 dB linear gain control range under fixed VG2S bias.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 8 V - defines maximum RF signal swing before breakdown in 5 V supply systems |
| ID cont | 40 mA - sets DC bias headroom for linear small-signal amplification |
| F typ @ 800 MHz | 1.5 dB - enables high-SNR reception in sub-1 GHz RF front ends |
| Gp typ @ 800 MHz | 23 dB - provides single-stage gain sufficient to drive mixer inputs without cascading |
| ΔGp | 50 dB - supports wide-dynamic-range AGC in automotive radar IF chains |
| Rthchs | ≤370 K/W - limits junction temperature rise to <150 °C at 200 mW dissipation in SOT143 |
| VG1S(p) | 0.5 V - determines minimum G1 bias for pinch-off, critical for AGC threshold setting |
Pinout & Package
SOT143 package: 4-pin plastic surface-mount, 1.3 mm × 1.1 mm footprint, 0.95 mm height, lead-free (RoHS compliant), qualified per AEC-Q101 Grade 2.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (S) | Source | Common reference node for both gates; tied to RF ground in tuned amplifier layouts |
| 2 (D) | Drain | RF output node; connects to matching network and next stage via 50 Ω trace |
| 3 (G2) | Gate 2 | Primary conduction control; biased at 4 V for optimal gfs and noise performance |
| 4 (G1) | Gate 1 | Gain control input; voltage-tuned to adjust transconductance and suppress intermodulation |
Key Features
| Feature | Design Value |
|---|---|
| Dual-gate architecture | Enables independent DC bias (G2) and dynamic gain control (G1) without external feedback networks |
| AEC-Q101 qualified | Validated for automotive ambient temperatures (−40 °C to +125 °C case) and vibration stress |
| Low 1.5 dB NF @ 800 MHz | Reduces system noise figure in UHF receiver front ends where LNA performance dominates sensitivity |
| 50 dB gain control range | Permits full AGC loop implementation using simple DAC-driven G1 voltage, eliminating varactor diodes |
| ESD Class 2 (HBM) | Supports automated SMT assembly without special handling beyond standard Class 2 protocols |
Applications
| Automotive Radar Receiver Front End | UHF TV Tuner IF Amplifier |
|---|---|
Use Scenario: 77 GHz radar downconverted to 1–2 GHz IF band requiring stable, low-noise amplification prior to digitization. IC Role / Device Role / Timing Role: Low-noise tetrode MOSFET operating as first IF amplifier stage with analog AGC. Use Value: 1.5 dB noise figure preserves SNR across temperature; 50 dB ΔGp accommodates 60 dB radar echo dynamic range. | Use Scenario: Analog/digital terrestrial TV tuner processing 470–862 MHz signals with variable channel strength. IC Role / Device Role / Timing Role: Dual-gate RF amplifier providing programmable gain control in IF strip. Use Value: VG1S-based gain tuning eliminates need for switched attenuators; 23 dB Gp meets ETSI EN 300 744 linearity requirements. |
| ISM Band Sensor Transceiver | GNSS Signal Conditioning Stage |
Use Scenario: 2.4 GHz industrial sensor node with integrated transceiver needing low-power, low-noise receive path. IC Role / Device Role / Timing Role: High-gain, low-current RF amplifier in 5 V-powered receive chain. Use Value: 40 mA ID rating enables operation at 15 mA bias for 1.8 dB NF - extending battery life while maintaining sensitivity. | Use Scenario: GPS/GLONASS L1-band (1575.42 MHz) front end requiring ultra-low phase noise amplification. IC Role / Device Role / Timing Role: First-stage LNA with G1 used for interference blanking during jamming events. Use Value: Fast G1 response (<100 ns) allows real-time suppression of pulsed interferers without degrading carrier phase integrity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-gate RF amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BFP181 | Single-gate LNA; 0.8 dB NF @ 1.8 GHz, no G1 gain control | Lacks analog AGC capability; requires external VGA or switched gain | Select when fixed-gain, higher-frequency (up to 2.5 GHz) operation is prioritized over dynamic range control |
| MRF901 | Discrete GaAs FET; 0.6 dB NF @ 900 MHz, 35 mA ID, no dual-gate structure | Higher gain (18 dB) but no built-in gain control; requires external bias network | Choose for legacy 900 MHz ISM designs where GaAs process compatibility is mandatory |
Compared with BFP181 and MRF901, BF2030E6814HTSA1 uniquely integrates analog gain control within a silicon tetrode, enabling compact, low-cost AGC loops without external components - critical for space-constrained automotive and consumer RF modules.
Availability
BF2030E6814HTSA1 is available at Aetrix Electronics and suitable for automotive radar receivers, UHF TV tuners, ISM-band sensor transceivers, and GNSS signal conditioning stages requiring stable component supply with AEC-Q101 compliance and RoHS-conforming packaging.
Supply support for BF2030E6814HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor leader focused on secure connectivity solutions for automotive, industrial, and IoT applications, with core expertise in RF, analog, and mixed-signal design.
BF2030E6814HTSA1 belongs to NXP's RF transistor product line, engineered specifically for high-linearity, low-noise, gain-controllable amplification in automotive and broadcast receiver front ends up to 1 GHz.
FAQ
What is the recommended gate 2 bias voltage for optimal noise figure?
The datasheet specifies VG2S = 4 V as the condition for measuring 1.5 dB typical noise figure at 800 MHz. This bias point maximizes transconductance while minimizing channel thermal noise. Deviating below 3.5 V increases NF by ≥0.3 dB; above 4.5 V raises power dissipation without NF improvement.
Can Gate 1 be driven with PWM instead of analog voltage for digital AGC?
No - Gate 1 is not rated for fast switching. The device's IG1SS leakage and G1 input capacitance (2.4 pF) make PWM operation unstable. The datasheet specifies only DC or slowly varying VG1S (≤10 kHz modulation) for reliable gain control; faster signals cause distortion and thermal runaway.
Is thermal derating required when operating at 125 °C case temperature?
Yes - at TS = 125 °C, maximum allowable Ptot drops to 85 mW for BF2030E6814HTSA1 in SOT143, per the Rthchs ≤370 K/W curve. To maintain 200 mW operation, case temperature must stay ≤76 °C; PCB copper area and airflow must be designed accordingly.
Does the "E6814HTSA1" suffix indicate tape-and-reel packaging?
Yes - the "TSA1" suffix denotes tape-and-reel packaging per JEDEC standard: 3,000 units per 180 mm reel. "E6814" is NXP's internal lot and date code; "HT" indicates high-temperature test screening per AEC-Q101 requirements.
BF2030E6814HTSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- TO-253-4, TO-253AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N-Channel
- Frequency:
- 800MHz
- Gain:
- 23dB
- Voltage - Test:
- 5 V
- Current Rating (Amps):
- 40mA
- Noise Figure:
- 1.5dB
- Current - Test:
- 10 mA
- Power - Output:
- -
- Voltage - Rated:
- 8 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT-143-3D
BF2030E6814HTSA1 FAQ
1.How can I place an order for BF2030E6814HTSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BF2030E6814HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BF2030E6814HTSA1 reliable?
The price and inventory of BF2030E6814HTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BF2030E6814HTSA1 is usually 5 days.
3.What payment methods are accepted for BF2030E6814HTSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BF2030E6814HTSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BF2030E6814HTSA1?
BF2030E6814HTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BF2030E6814HTSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BF2030E6814HTSA1?
For technical support, including BF2030E6814HTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BF2030E6814HTSA1 requirements.
6.How does Aetrix verify that BF2030E6814HTSA1 is sourced from the original manufacturer or authorized distributors?
All BF2030E6814HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BF2030E6814HTSA1 meets industry standards.
7.What is the process for return or replacement of BF2030E6814HTSA1?
All BF2030E6814HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BF2030E6814HTSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BF2030E6814HTSA1 part is unused and in its original packaging.
Return procedure for BF2030E6814HTSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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