Infineon Technologies BF2030RE6814HTSA1

Overview

BF2030RE6814HTSA1 from NXP Semiconductors is a silicon N-channel tetrode MOSFET designed for low-noise, high-gain RF input stages up to 1 GHz. It features dual gates (G1/G2), 5 V operating voltage, 200 mW power dissipation at TS ≤ 76 °C, 1.5 dB typical noise figure at 800 MHz, and 23 dB typical power gain at same frequency - deployed in automotive AM/FM tuner front-ends.

For engineers reviewing the BF2030RE6814HTSA1 datasheet, BF2030RE6814HTSA1 pinout, BF2030RE6814HTSA1 application, or BF2030RE6814HTSA1 equivalent, key selection criteria include gate-controlled gain range (50 dB), G1 pinch-off voltage (0.5 V typ), RF output capacitance (1.3 pF typ), thermal resistance (370 K/W), and AEC-Q101 qualification for automotive signal chain use.

Technical Context

This tetrode structure separates RF signal path (G2–D–S) from AGC control path (G1), enabling independent biasing and dynamic gain adjustment without degrading noise performance. Its SOT143 package supports high-frequency layout with short internal leads and defined ground pin (Pin 3).

DC operation requires VG2S = 4 V for nominal IDSX = 12 mA, while VG1S adjusts gain over 40–50 dB range; noise figure remains ≤2.2 dB across ID = 2–20 mA, confirming suitability for sensitive receiver front-ends.

Key Specifications

Pinout & Package

SOT143 package: 4-pin plastic surface-mount, 1.3 mm × 1.7 mm footprint, 0.95 mm height, lead pitch 0.9 mm, exposed drain pad for thermal conduction.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-gate RF amplifier applications.

Compared with BFP181 and MRF901, BF2030RE6814HTSA1 uniquely integrates AGC control within a tetrode structure-eliminating external components while maintaining 1.5 dB NF and enabling 50 dB gain range in a space-constrained SOT143 package.

Availability

BF2030RE6814HTSA1 is available at Aetrix Electronics and suitable for automotive infotainment systems, portable digital radio receivers, UHF RFID readers, and ISM-band wireless sensor nodes requiring stable component supply and AEC-Q101 compliance.

Supply support for BF2030RE6814HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT markets.

BF2030RE6814HTSA1 belongs to NXP's RF transistor product line, engineered specifically for high-linearity, low-noise RF amplification in automotive and portable broadcast receivers with integrated gain control.

FAQ

What is the recommended gate 2 (G2) bias voltage for optimal noise figure?

VG2S = 4 V is the recommended bias for achieving the specified 1.5 dB typical noise figure at 800 MHz. This setting delivers IDSX ≈ 12 mA and ensures gfs ≈ 31 mS, balancing low noise with adequate transconductance. Deviating below 3.5 V increases NF; above 4.5 V raises power dissipation without meaningful NF improvement.

Can BF2030RE6814HTSA1 operate at 1.8 GHz?

No - the device is characterized and optimized up to 1 GHz. At 1.8 GHz, power gain drops below 10 dB and noise figure exceeds 4 dB due to parasitic capacitance and reduced fT margin. For 1.8 GHz applications, NXP's BGA2867 or BGA7222 are designated alternatives with verified 2 GHz performance.

Is external ESD protection required despite Class 2 HBM rating?

Yes - although rated for 2000–4000 V HBM, the G1 and G2 gates remain highly sensitive. Layout best practices require 100 Ω series resistors on both gate lines and local 100 pF bypass capacitors to ground near the package. Board-level TVS diodes are advised for systems exposed to frequent handling or unshielded connectors.

How does thermal derating work for BF2030RE6814HTSA1 in SOT143?

At TS = 76 °C, Ptot must be reduced linearly from 200 mW to zero at 150 °C ambient. Derating slope is −2.63 mW/°C. For example, at TS = 100 °C, max allowable Ptot = 200 − (100 − 76) × 2.63 = 137 mW. PCB copper area under the exposed drain pad directly impacts achievable TS.