Infineon Technologies BF2030WE6814BTSA1

Overview

BF2030WE6814BTSA1 from NXP Semiconductors is a silicon N-channel tetrode MOSFET designed for low-noise, high-gain RF input stages up to 1 GHz. It features dual-gate architecture with independent gate control (G1/G2), 5 V operating voltage, 1.5 dB typical noise figure at 800 MHz, 23 dB typical power gain, and SOT343 surface-mount package. Used in RF front-end amplifiers for broadcast tuners and analog TV receivers.

For engineers reviewing the BF2030WE6814BTSA1 datasheet, BF2030WE6814BTSA1 pinout, BF2030WE6814BTSA1 application, or BF2030WE6814BTSA1 equivalent, key selection criteria include dual-gate biasing flexibility, sub-2 dB noise performance at UHF frequencies, gain control range of 50 dB, thermal resistance of ≤280 K/W, and AEC-Q101 qualification for automotive-grade reliability.

Technical Context

This tetrode MOSFET employs separate gate terminals (G1 and G2) to decouple RF signal path (G2-controlled channel) from AGC or bias control (G1), enabling stable gain regulation without degrading noise performance. Its 2.4 pF typical gate1-source capacitance and 1.3 pF output capacitance support broadband matching up to 1 GHz.

Designed for 5 V DC operation with 40 mA continuous drain current and 200 mW total power dissipation at T_S ≤ 94 °C, it delivers 12 mA typical drain current under standard test conditions (V_DS = 5 V, V_G2S = 4 V, R_G1 = 100 kΩ), supporting low-power RF amplification in space-constrained tuner modules.

Key Specifications

Pinout & Package

SOT343 plastic surface-mount package: 1.3 mm × 1.7 mm × 0.9 mm body, 4-pin leadless outline with exposed thermal pad, RoHS-compliant, qualified per AEC-Q101 Grade 2 ESD rating (2000–4000 V HBM).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-gate RF amplifier applications.

Compared with BFP181W and MRF901, BF2030WE6814BTSA1 uniquely integrates dual-gate control in a miniature SOT343 package, delivering optimal trade-off between noise, gain control linearity, and board-space efficiency for modern tuner IC co-designs.

Availability

BF2030WE6814BTSA1 is available at Aetrix Electronics and suitable for FM radio tuners, analog TV receivers, set-top box demodulators, and legacy broadcast receiver designs requiring stable component supply and automotive-grade reliability.

Supply support for BF2030WE6814BTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader focused on secure connectivity solutions for automotive, industrial, and consumer applications, with core expertise in RF, analog, and mixed-signal technologies.

The BF2030 series belongs to NXP's legacy RF transistor product line, specifically engineered for high-fidelity analog broadcast signal amplification in tuner front-ends where noise, gain stability, and AGC precision are critical.

FAQ

What is the recommended gate biasing configuration for AGC operation?

For AGC use, apply fixed 4 V to G2 (RF input gate) and sweep G1 (control gate) from 0 to 4 V using a high-impedance voltage source. Maintain RG1 ≥ 100 kΩ to limit G1 current to <100 nA, preserving linearity and preventing G1 forward conduction. Source must be grounded with minimum inductance.

How does thermal derating affect maximum power dissipation in SOT343 layout?

At solder-point temperature (T_S) above 94 °C, P_tot must be linearly reduced from 200 mW using the published P_tot vs. T_S curve. With 2-layer PCB and 1 cm² copper pour under the exposed pad, T_S typically stays ≤75 °C at 150 mW, allowing full-rated operation without forced air.

Can BF2030WE6814BTSA1 replace BF2030R in existing SOT143 layouts?

No - BF2030WE6814BTSA1 uses SOT343 (pin 1 = D, pin 2 = S, pin 3 = G1, pin 4 = G2), while BF2030R uses SOT143 (pin 1 = S, pin 2 = D, pin 3 = G2, pin 4 = G1). Pinout inversion and 0.2 mm pitch difference prevent direct replacement without PCB redesign.

What is the impact of V_G2S variation on noise figure stability?

V_G2S directly controls channel conductance and thus noise contribution. At V_G2S = 4 V, NF remains stable within ±0.1 dB across 10–15 mA I_D; below 3 V, NF increases sharply (>2.5 dB) due to reduced transconductance and increased channel resistance.