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Infineon Technologies BF2030WH6814XTSA1

Part No.:
BF2030WH6814XTSA1
Manufacturer:
Infineon Technologies
Category:
Single FETs, MOSFETs
Package:
SC-82A, SOT-343
Datasheet:
AetrixBF2030WH6814XTSA1.pdf
Description:
RF MOSFET 5V SOT343
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,815

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Product details

Overview

BF2030WH6814XTSA1 from NXP Semiconductors is a silicon N-channel tetrode MOSFET designed for low-noise, high-gain RF input stages up to 1 GHz. It features dual-gate architecture with independent gate control (G1 and G2), 5 V operating voltage, 1.5 dB typical noise figure at 800 MHz, 23 dB typical power gain, and SOT343 (SC-82AB) package.

For engineers reviewing the BF2030WH6814XTSA1 datasheet, BF2030WH6814XTSA1 pinout, BF2030WH6814XTSA1 application, or BF2030WH6814XTSA1 equivalent, this device serves as a precision AGC-controlled RF amplifier front-end in UHF receivers, requiring verified noise performance, gain tunability via VG2, and thermal stability up to 150 °C channel temperature.

Technical Context

This tetrode MOSFET implements a dual-gate structure where Gate 2 (G2) sets DC bias and gain level, while Gate 1 (G1) provides RF signal input and AGC control path. Its 2.4 pF typical Cg1ss and 1.3 pF Cdss enable stable impedance matching at 800 MHz with minimal feedback.

It operates under fixed 5 V drain-source voltage with VG2S adjustable from 0 to 4 V to achieve 40–50 dB gain control range; VG1S(p) is 0.5 V typ., enabling precise pinch-off tuning for linear amplification in narrowband receiver IF/RF stages.

Key Specifications

Parameter Value and Actual Design Meaning
Noise figure 1.5 dB typ. at 800 MHz - enables high-sensitivity UHF reception with minimal signal degradation
Power gain 23 dB typ. at 800 MHz - delivers sufficient small-signal amplification before mixer stage
Forward transconductance 31 mS typ. at ID = 10 mA - supports high linearity and AGC responsiveness
Gate1 input capacitance 2.4 pF typ. at 10 MHz - ensures predictable input impedance for 50 Ω RF matching networks
Drain current 12 mA typ. at VDS = 5 V, VG2S = 4 V - establishes stable quiescent point for low-distortion operation
Channel temperature limit 150 °C - allows reliable operation in sealed RF modules without active cooling
Gain control range 50 dB max. at 800 MHz - enables wide dynamic range AGC implementation with single-device topology

Pinout & Package

SOT343 (SC-82AB) surface-mount plastic package with 4-pin configuration, 1.3 mm × 1.7 mm footprint, and 0.95 mm height; optimized for RF layout with low-inductance leads and grounded heat slug.

Pin/Terminal Circuit Role Design Meaning
1 (D) Drain Main RF output node; connects to matching network and load; carries full RF current
2 (S) Source AC ground reference for both gates; ties to RF ground plane with minimal inductance
3 (G1) Gate 1 RF input and AGC control terminal; high-impedance node sensitive to ESD (Class 2 HBM)
4 (G2) Gate 2 Bias and gain-setting terminal; DC-controlled to adjust transconductance and power gain

Key Features

Feature Design Value
Dual-gate tetrode architecture Enables independent RF signal injection (G1) and gain control (G2), eliminating need for external AGC diodes or op-amps
Low noise figure (1.5 dB typ.) Meets stringent sensitivity requirements in UHF TV tuners and ISM-band receivers below –100 dBm input
50 dB gain control range Permits full dynamic range compression in analog AGC loops without cascaded stages or digital calibration
AEC-Q101 qualified Validated for automotive infotainment RF front-ends per stress test conditions including HTOL and TC022
RoHS-compliant SOT343 package Supports lead-free reflow assembly and meets EU ELV directive for automotive electronics

Applications

UHF TV Tuner Front-End ISM-Band Receiver AGC Stage

Use Scenario: Amplifying weak terrestrial digital TV signals (470–862 MHz) before downconversion in set-top box tuner modules.

IC Role / Device Role / Timing Role: Low-noise RF amplifier with integrated AGC path via G1, replacing discrete JFET + diode limiter combinations.

Use Value: 1.5 dB NF and 23 dB gain maintain carrier-to-noise ratio above 45 dB in marginal signal areas without external LNA staging.

Use Scenario: Signal conditioning in 868/915 MHz wireless sensor nodes with variable received power due to antenna placement or obstruction.

IC Role / Device Role / Timing Role: Dual-gate gain-control element in analog AGC loop, responding to RSSI-derived VG2 voltage in <10 μs.

Use Value: 50 dB gain control range accommodates >60 dB input dynamic range, eliminating need for programmable gain amplifier ICs.

Automotive Digital Radio (DAB/DAB+) Front-End Portable RFID Reader Receiver

Use Scenario: First-stage amplification in vehicle-mounted DAB+ receivers subject to temperature cycling and EMI from engine control units.

IC Role / Device Role / Timing Role: AEC-Q101-qualified RF amplifier providing stable gain and NF across –40 °C to +105 °C ambient.

Use Value: 150 °C channel temperature rating and SOT343 thermal resistance (≤280 K/W) ensure no derating required in enclosed dashboard enclosures.

Use Scenario: Boosting weak backscatter signals from passive UHF RFID tags (860–960 MHz) in handheld readers with battery-constrained power budgets.

IC Role / Device Role / Timing Role: Low-power, low-voltage (5 V) RF amplifier enabling >10 m read range while drawing only 12 mA quiescent current.

Use Value: 200 mW total power dissipation at TS ≤ 94 °C allows continuous operation in compact plastic housings without heatsinking.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-gate RF amplifier applications.

Alternative Part Technical Difference Application Difference Selection Advice
BFP181 Single-gate LDMOS, 2.5 dB NF, 18 dB gain at 900 MHz, higher IDSS (25 mA) Lacks G1-based AGC; requires external gain control circuitry Preferred when cost-sensitive designs tolerate higher noise and accept added board area for control components
MRF901 Discrete GaAs FET, 1.2 dB NF, 15 dB gain, 12 V operation, TO-92 package Higher voltage requirement and through-hole mounting incompatible with dense SMT layouts Selected only for legacy repair or ultra-low-noise lab-grade receivers where SMT density is secondary

Compared with BFP181 and MRF901, BF2030WH6814XTSA1 uniquely integrates AGC functionality within a miniature SMT package while maintaining sub-2 dB noise and 5 V compatibility-critical for next-generation compact, battery-powered, and automotive RF receivers.

Availability

BF2030WH6814XTSA1 is available at Aetrix Electronics and suitable for UHF TV tuners, automotive DAB+ receivers, ISM-band wireless sensors, and portable RFID readers requiring stable component supply across extended temperature and lifecycle demands.

Supply support for BF2030WH6814XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader focused on secure connectivity solutions for automotive, industrial, and IoT applications, with core expertise in RF, analog, and mixed-signal design.

BF2030WH6814XTSA1 belongs to NXP's RF transistor product line, engineered specifically for high-linearity, low-noise, gain-controllable front-end amplification in sub-1 GHz consumer and automotive radio systems.

FAQ

What is the maximum safe operating voltage for BF2030WH6814XTSA1?

The absolute maximum drain-source voltage is 8 V, but the device is characterized and intended for 5 V operation per datasheet conditions. Exceeding 5 V may degrade noise figure and accelerate gate oxide wear, especially under RF stress. The 8 V rating applies only to DC transient conditions-not sustained operation.

How is AGC implemented using the dual-gate structure?

AGC is implemented by varying VG2 (Gate 2) voltage from 0 to 4 V to modulate transconductance and gain, while RF signal is applied to G1 (Gate 1). This preserves G1's high input impedance and minimizes distortion, unlike single-gate FETs requiring source degeneration or external attenuators for gain control.

Is BF2030WH6814XTSA1 compatible with lead-free reflow profiles?

Yes-the SOT343 package is RoHS-compliant and qualified for standard lead-free reflow profiles with peak temperatures up to 260 °C. Thermal resistance data (Rthchs ≤280 K/W) confirms reliable solder joint integrity and junction temperature control during JEDEC J-STD-020-compliant reflow cycles.

Why does the datasheet specify Class 2 ESD sensitivity?

BF2030WH6814XTSA1 has a Human Body Model ESD rating of 2000–4000 V due to its thin gate oxide and high-impedance G1 terminal. Handling requires grounded wrist straps, ionized air, and static-dissipative packaging-especially during PCB placement-to prevent latent damage that degrades gfs or increases leakage beyond 50 nA.

BF2030WH6814XTSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
SC-82A, SOT-343
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Technology:
MOSFET (Metal Oxide)
Configuration:
N-Channel
Frequency:
800MHz
Gain:
23dB
Voltage - Test:
5 V
Current Rating (Amps):
40mA
Noise Figure:
1.5dB
Current - Test:
10 mA
Power - Output:
-
Voltage - Rated:
8 V
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-SOT343-3D

BF2030WH6814XTSA1 FAQ

1.How can I place an order for BF2030WH6814XTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BF2030WH6814XTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BF2030WH6814XTSA1 reliable?

The price and inventory of BF2030WH6814XTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BF2030WH6814XTSA1 is usually 5 days.

3.What payment methods are accepted for BF2030WH6814XTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BF2030WH6814XTSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BF2030WH6814XTSA1?

BF2030WH6814XTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BF2030WH6814XTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BF2030WH6814XTSA1?

For technical support, including BF2030WH6814XTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BF2030WH6814XTSA1 requirements.

6.How does Aetrix verify that BF2030WH6814XTSA1 is sourced from the original manufacturer or authorized distributors?

All BF2030WH6814XTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BF2030WH6814XTSA1 meets industry standards.

7.What is the process for return or replacement of BF2030WH6814XTSA1?

All BF2030WH6814XTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BF2030WH6814XTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BF2030WH6814XTSA1 part is unused and in its original packaging.

Return procedure for BF2030WH6814XTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BF2030WH6814XTSA1 Tags

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