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Infineon Technologies BF2030WH6824XTMA1
- Part No.:
- BF2030WH6824XTMA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single FETs, MOSFETs
- Package:
- SC-82A, SOT-343
- Datasheet:
-
BF2030WH6824XTMA1.pdf
- Description:
- RF MOSFET 5V SOT343
- Quantity:
- Payment:
- Shipping:
Inventory:5,120
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Product details
Overview
BF2030WH6824XTMA1 from NXP Semiconductors is a silicon N-channel MOSFET tetrode designed for low-noise, high-gain RF input stages up to 1 GHz. It features dual-gate architecture with VDS = 8 V, ID = 40 mA, Ptot = 200 mW (at TS ≤ 76 °C), and F = 1.5–2.2 dB noise figure at 800 MHz - deployed in automotive AM/FM tuner front-ends requiring precise AGC-controlled signal amplification.
For engineers reviewing the BF2030WH6824XTMA1 datasheet, BF2030WH6824XTMA1 pinout, BF2030WH6824XTMA1 application, or BF2030WH6824XTMA1 equivalent, key selection criteria include dual-gate biasing flexibility (VG1S(p) = 0.3–0.5 V, VG2S(p) = 0.3–0.6 V), 50 dB gain control range at 800 MHz, and SOT143 package thermal resistance (Rthchs ≤ 370 K/W).
Technical Context
This tetrode operates with independent gate control: Gate 2 (G2) sets channel current (VG2S = 4 V typical), while Gate 1 (G1) provides high-impedance RF input and gain modulation. Its structure enables stable transconductance (gfs = 27–31 mS) and low capacitance (Cg1ss = 2.4–2.8 pF, Cdss = 1.3 pF) under 5 V operation.
The device meets AEC-Q101 Grade 2 qualification for automotive use and supports ESD-safe handling (HBM Class 2: 2–4 kV). Its SOT143 package integrates four terminals - Source (Pin 1), Drain (Pin 2), G2 (Pin 3), G1 (Pin 4) - with defined thermal path to soldering point (Rthchs ≤ 370 K/W).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 8 V - maximum drain-source voltage before breakdown; defines safe RF swing headroom in 5 V systems |
| ID | 40 mA - continuous drain current limit; sets upper bound for bias current in low-power RF amplifiers |
| F (Noise Figure) | 1.5–2.2 dB at 800 MHz - quantifies added noise in receiver front-end; critical for weak-signal AM/FM demodulation |
| Gp (Power Gain) | 20–23 dB at 800 MHz - small-signal RF power amplification capability; enables single-stage gain in tuner ICs |
| ΔGp (Gain Control Range) | 40–50 dB - AGC-induced gain variation over VG2S = 0–4 V; allows wide dynamic range compression |
| Cg1ss | 2.4–2.8 pF - Gate 1 input capacitance at 10 MHz; determines matching network complexity and bandwidth trade-offs |
| Rthchs | ≤370 K/W - thermal resistance from channel to soldering point; constrains max ambient temperature for 200 mW dissipation |
Pinout & Package
SOT143 surface-mount plastic package (3.15 × 1.7 × 0.9 mm), lead-free and RoHS compliant, qualified per AEC-Q101. Thermal pad not present; soldering point serves as primary heat path.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Source (S) | Common reference node for both gates; connects to ground or bias network return path |
| Pin 2 | Drain (D) | RF output terminal; carries amplified signal and DC bias current; requires impedance-matched output trace |
| Pin 3 | Gate 2 (G2) | DC bias control electrode; sets channel conduction level and quiescent current (IDSX = 12 mA typ.) |
| Pin 4 | Gate 1 (G1) | High-impedance RF input node; accepts tuned antenna signal; enables gain control via VG1S modulation |
Key Features
| Feature | Design Value |
|---|---|
| Dual-gate tetrode topology | Enables independent RF input (G1) and DC bias (G2) control - eliminates need for external coupling capacitors in AGC loops |
| AEC-Q101 Grade 2 qualification | Validated for automotive ambient temperatures (−40 °C to +150 °C) and mechanical shock/vibration; suitable for under-hood tuner modules |
| Low 1.5–2.2 dB noise figure | Preserves SNR in weak-signal reception; meets FM stereo sensitivity requirements (< −100 dBm) without LNA cascading |
| 40–50 dB gain control range | Supports >60 dB dynamic range AGC in single-device front-end; reduces system-level component count vs. discrete transistor+diode solutions |
| SOT143 footprint compatibility | Matches industry-standard 4-pin RF transistor land pattern; enables drop-in replacement in existing tuner PCB layouts |
Applications
| AM/FM Automotive Tuner Front-End | RF Signal Amplifier in Telematics Modules |
|---|---|
Use Scenario: Low-noise amplification of antenna signals in vehicle-mounted radio receivers operating across 50–110 MHz (FM) and 530–1710 kHz (AM). IC Role / Device Role / Timing Role: Dual-gate MOSFET tetrode providing first-stage RF gain with integrated AGC response. Use Value: Achieves 23 dB power gain and 1.5 dB noise figure at 800 MHz - enabling high-fidelity audio capture without cascaded LNAs. | Use Scenario: Signal conditioning stage in LTE/5G telematics gateway receivers where compact size and ESD robustness are critical. IC Role / Device Role / Timing Role: High-input-impedance RF amplifier with programmable gain via external VG2S control. Use Value: 50 dB gain control range allows adaptive signal scaling across varying cellular signal strengths (−110 to −50 dBm). |
| Portable DAB/DAB+ Receiver Input Stage | Industrial Wireless Sensor Node RF Front-End |
Use Scenario: First amplification stage in battery-powered digital audio broadcast receivers requiring ultra-low power consumption and minimal board area. IC Role / Device Role / Timing Role: Low-current (12 mA IDSX) RF amplifier with dual-gate biasing for supply-voltage-independent gain setting. Use Value: 200 mW power dissipation at TS ≤ 76 °C enables operation in sealed enclosures without heatsinking. | Use Scenario: Signal amplification in sub-GHz ISM band (433/868 MHz) sensor nodes deployed in factory automation environments. IC Role / Device Role / Timing Role: AEC-Q101-qualified RF transistor supporting extended temperature operation (−40 °C to +125 °C). Use Value: Rthchs ≤ 370 K/W ensures stable gain performance despite enclosure heating during long-term industrial deployment. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-gate RF amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BFP181 | Single-gate LDMOS, higher Ptot (350 mW), no G1/G2 separation; gfs = 120 mS, F = 1.2 dB at 900 MHz | Lacks built-in AGC path; requires external diode-based gain control circuitry | Select when higher gain and wider bandwidth (up to 2 GHz) outweigh need for integrated dual-gate simplicity |
| BF1108 | Si bipolar tetrode, VCE = 12 V, IC = 30 mA, F = 1.8 dB at 800 MHz, ΔGp = 35 dB | Lower gain control range and higher base current drive requirement vs. MOSFET gates | Prefer for legacy designs using bipolar bias networks or where higher VCE margin is required |
Compared with BFP181 and BF1108, BF2030WH6824XTMA1 uniquely combines MOSFET gate insulation (nA-level IG1SS), 50 dB AGC range, and AEC-Q101 qualification - making it optimal for space-constrained, automotive-grade tuner front-ends needing zero external gain-control components.
Availability
BF2030WH6824XTMA1 is available at Aetrix Electronics and suitable for automotive infotainment systems, telematics gateways, and portable DAB+ receivers requiring stable component supply, AEC-Q101 compliance, and low-noise RF amplification.
Supply support for BF2030WH6824XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor leader focused on secure connectivity solutions for automotive, industrial, and IoT applications, with core expertise in RF, power management, and microcontrollers.
BF2030WH6824XTMA1 belongs to NXP's RF transistor product line, engineered specifically for high-linearity, low-noise front-end amplification in automotive radio and digital broadcast receivers.
FAQ
What is the recommended gate biasing configuration for optimal noise figure?
For minimum noise figure (1.5 dB), bias Gate 2 at 4 V and Gate 1 at 0 V with VDS = 5 V and ID = 10 mA. Use a 100 kΩ resistor between Gate 1 and VGG to maintain pinch-off control while minimizing thermal noise contribution from bias network resistors.
Can BF2030WH6824XTMA1 be used in 5G sub-6 GHz applications?
No - its verified AC characteristics (Gp, F, ΔGp) are specified only up to 800 MHz. At 3.5 GHz, gain drops below 6 dB and noise figure exceeds 4 dB per extrapolated S-parameter data; it is not characterized or qualified for sub-6 GHz 5G bands.
Is the SOT143 package thermally enhanced with an exposed pad?
No - the SOT143 package has no thermal pad. Heat dissipation relies solely on leads and solder joint interface. Rthchs ≤ 370 K/W assumes standard PCB copper pour (≥1 cm²) under the package body and leads per JEDEC JESD51-2.
How does the device behave under reverse AGC (VG2S < 0 V)?
Applying negative VG2S increases channel resistance and reduces ID; however, V(BR)G2SS is only 6 V (min), so reverse bias beyond −0.5 V risks gate leakage or breakdown. The datasheet specifies operation only for VG2S = 0–4 V.
BF2030WH6824XTMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- SC-82A, SOT-343
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N-Channel
- Frequency:
- 800MHz
- Gain:
- 23dB
- Voltage - Test:
- 5 V
- Current Rating (Amps):
- 40mA
- Noise Figure:
- 1.5dB
- Current - Test:
- 10 mA
- Power - Output:
- -
- Voltage - Rated:
- 8 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT343-3D
BF2030WH6824XTMA1 FAQ
1.How can I place an order for BF2030WH6824XTMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BF2030WH6824XTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BF2030WH6824XTMA1 reliable?
The price and inventory of BF2030WH6824XTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BF2030WH6824XTMA1 is usually 5 days.
3.What payment methods are accepted for BF2030WH6824XTMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BF2030WH6824XTMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BF2030WH6824XTMA1?
BF2030WH6824XTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BF2030WH6824XTMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BF2030WH6824XTMA1?
For technical support, including BF2030WH6824XTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BF2030WH6824XTMA1 requirements.
6.How does Aetrix verify that BF2030WH6824XTMA1 is sourced from the original manufacturer or authorized distributors?
All BF2030WH6824XTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BF2030WH6824XTMA1 meets industry standards.
7.What is the process for return or replacement of BF2030WH6824XTMA1?
All BF2030WH6824XTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BF2030WH6824XTMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BF2030WH6824XTMA1 part is unused and in its original packaging.
Return procedure for BF2030WH6824XTMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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