Infineon Technologies BF2040RE6814HTSA1

Overview

BF2040RE6814HTSA1 from NXP Semiconductors is a silicon N-channel tetrode MOSFET designed for low-noise, high-gain RF input stages up to 1 GHz. It operates at 5 V, delivers 23 dB typical power gain at 800 MHz, achieves 1.6 dB typical noise figure at 800 MHz, and supports 50 µA typical drain current under specified bias (V_DS = 5 V, V_G2S = 4 V). It is used in VHF/UHF front-end amplifiers for automotive radio receivers.

For engineers reviewing the BF2040RE6814HTSA1 datasheet, BF2040RE6814HTSA1 pinout, BF2040RE6814HTSA1 application, or BF2040RE6814HTSA1 equivalent, key selection criteria include its dual-gate structure enabling AGC capability, 42 mS typical forward transconductance, SOT143 package thermal resistance ≤370 K/W, and AEC-Q101 qualification for automotive environments.

Technical Context

This tetrode MOSFET integrates two independent gates (G1 and G2) to decouple signal input (G1) from gain control (G2), enabling stable high-frequency amplification with voltage-controlled gain adjustment. Its 2.9 pF typical gate1-source capacitance and 1.6 pF output capacitance support impedance matching in 50 Ω RF paths up to 1 GHz.

The device uses a silicon epitaxial process optimized for low-noise RF performance, with verified 23 dB power gain and 1.6 dB noise figure at 800 MHz under 5 V/15 mA operating conditions. Its 0.6 V typical gate1 pinch-off voltage and 0.7 V gate2 pinch-off voltage define precise DC biasing requirements for linear operation.

Key Specifications

Pinout & Package

SOT143 package: 4-pin surface-mount plastic package with exposed thermal pad (not electrically connected), footprint compliant with JEDEC MO-178AA, thermal resistance R_th(ch-s) ≤ 370 K/W at T_S ≤ 76 °C.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-gate RF amplifier applications.

Compared with BFP181 and BF1108, BF2040RE6814HTSA1 uniquely combines sub-2 dB noise, 50 dB analog gain control, and AEC-Q101 qualification-making it the sole option for automotive-grade, AGC-integrated VHF/UHF front-ends.

Availability

BF2040RE6814HTSA1 is available at Aetrix Electronics and suitable for automotive infotainment systems, wireless microphone receivers, ISM-band sensor nodes, and legacy broadcast tuner modules requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for BF2040RE6814HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT markets.

The BF2040 series belongs to NXP's RF transistor product line, engineered specifically for high-linearity, low-noise analog signal amplification in automotive and consumer broadcast receivers operating below 1 GHz.

FAQ

What is the maximum operating frequency for stable gain in the BF2040RE6814HTSA1?

The device delivers verified 23 dB power gain at 800 MHz and maintains usable gain up to 1 GHz, as confirmed by manufacturer AC characterization data. Performance beyond 1 GHz is not specified; design margin should be applied for reliable operation at band edges.

How is Gate 2 used for automatic gain control (AGC)?

Gate 2 accepts a DC control voltage (0–4 V) that linearly adjusts transconductance and thus RF gain, providing 50 dB total control range. It must be biased through a high-impedance network (≥100 kΩ) to avoid loading the AGC source and degrading noise performance.

Is thermal pad connection required for the SOT143 package?

Yes-the SOT143 package includes an exposed thermal pad on the bottom side. For reliable operation at rated P_tot = 200 mW, the pad must be soldered to a thermally robust copper area on the PCB to achieve ≤370 K/W channel-to-solder-point thermal resistance.

Does the BF2040RE6814HTSA1 support DC-coupled input configurations?

No-Gate 1 requires reverse-biased junction operation. The datasheet specifies V_G1S(p) = 0.6 V typical; therefore, a negative DC offset or AC coupling with appropriate biasing is mandatory to maintain pinch-off and prevent forward conduction and distortion.