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Infineon Technologies BF2040WE6814HTSA1
- Part No.:
- BF2040WE6814HTSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single FETs, MOSFETs
- Package:
- SC-82A, SOT-343
- Datasheet:
-
BF2040WE6814HTSA1.pdf
- Description:
- RF MOSFET 5V SOT343
- Quantity:
- Payment:
- Shipping:
Inventory:5,311
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Product details
Overview
BF2040WE6814HTSA1 from NXP Semiconductors is a silicon N-channel dual-gate MOSFET tetrode optimized for low-noise, high-gain RF amplification in input stages up to 1 GHz. It operates at 5 V supply, delivers 23 dB typical power gain at 800 MHz, achieves 1.6 dB typical noise figure, and supports 50 µA typical drain current under VG2S = 4 V biasing - deployed in UHF TV tuners and satellite receiver front-ends.
For engineers reviewing the BF2040WE6814HTSA1 datasheet, BF2040WE6814HTSA1 pinout, BF2040WE6814HTSA1 application, or BF2040WE6814HTSA1 equivalent, this part is selected for its verified 45–50 dB gain control range, dual-gate isolation enabling AGC linearity, and AEC-Q101 qualification for automotive RF modules requiring stable small-signal performance below 1 GHz.
Technical Context
This tetrode features two independent gates: Gate 1 (G1) serves as the signal input with 2.9 pF typical input capacitance and 0.3–0.6 V pinch-off voltage, while Gate 2 (G2) acts as the DC bias control terminal with 0.3–0.7 V pinch-off voltage and 4 V recommended operating bias. The device uses a common-source configuration with source (S) and drain (D) terminals referenced to G2-biased channel conduction.
Its RF performance is characterized at VDS = 5 V, ID = 15 mA, VG2S = 4 V, and f = 800 MHz, where it achieves 42 mS typical forward transconductance and 1.6 dB noise figure - enabling high dynamic range in analog front-end amplifiers where cross-modulation suppression and AGC stability are critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 8 V - sets absolute maximum drain-source voltage for safe operation in 5 V RF systems |
| ID continuous | 40 mA - defines maximum DC drain current for thermal design of bias networks and PCB copper |
| gfs typ | 42 mS - determines small-signal voltage gain per unit input voltage change at 15 mA operating point |
| F typ @ 800 MHz | 1.6 dB - quantifies added noise in receiver LNA stages; enables sub-2 dB NF system-level design |
| Gp typ @ 800 MHz | 23 dB - specifies available power gain for impedance-matched 50 Ω RF paths in tuner IF chains |
| ∆Gp | 45–50 dB - measures gain reduction range via VG1 control, supporting wide-dynamic-range AGC loops |
| Rthchs | ≤280 K/W - thermal resistance from channel to soldering point (BF2040W package), critical for derating above 76 °C ambient |
Pinout & Package
SOT343 (SC-82AB) 4-pin plastic surface-mount package with exposed drain pad for thermal enhancement; moisture sensitivity level MSL3 per J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 = D | Drain | Main RF output node; electrically connected to exposed pad for heat dissipation and ground reference |
| 2 = S | Source | Common return path for both gates and drain; tied to RF ground plane in matching network layout |
| 3 = G1 | Gate 1 | RF signal input terminal; high-impedance node requiring 50 Ω microstrip feed and DC blocking |
| 4 = G2 | Gate 2 | Bias control terminal; accepts stable 4 V DC for setting quiescent ID and optimizing NF/Gp trade-off |
Key Features
| Feature | Design Value |
|---|---|
| Dual-gate architecture | Independent G1 (signal) and G2 (bias) enable simultaneous RF gain control and DC operating point stability |
| AEC-Q101 qualified | Validated for automotive RF modules including digital TV tuners and telematics receivers |
| Low noise figure | 1.6 dB typical at 800 MHz ensures minimal degradation of SNR in weak-signal reception |
| High gain control range | 45–50 dB ∆Gp allows precise AGC implementation without external attenuators or switches |
| Pb-free RoHS compliance | SOT343 package meets EU Directive 2011/65/EU and JEDEC JS-001 ESD handling requirements |
Applications
| UHF TV Tuner Front-End | Satellite Receiver LNA |
|---|---|
|
Use Scenario: Amplifying weak terrestrial broadcast signals in 470–862 MHz band before downconversion. IC Role / Device Role / Timing Role: Low-noise amplifier (LNA) with G2-biased channel for fixed-gain, high-linearity first-stage amplification. Use Value: 1.6 dB NF preserves signal integrity; 23 dB Gp reduces need for cascaded gain stages and associated noise accumulation. |
Use Scenario: Boosting 950–2150 MHz satellite IF signals in set-top box input stages. IC Role / Device Role / Timing Role: Dual-gate RF amplifier enabling AGC via G1 voltage sweep while maintaining G2-set quiescent point. Use Value: 45–50 dB gain control range supports wide input dynamic range without distortion or compression. |
| Automotive Digital Radio Receiver | ISM Band Sensor Transceiver |
|
Use Scenario: Receiving DAB/DAB+ signals in vehicle infotainment systems operating at 174–240 MHz. IC Role / Device Role / Timing Role: AEC-Q101-qualified LNA providing robust RF gain under temperature cycling and vibration stress. Use Value: ≤280 K/W Rthchs enables reliable operation at junction temperatures up to 150 °C in enclosed head-unit enclosures. |
Use Scenario: Transmit/receive switching in 2.4 GHz ISM-band wireless sensor nodes with integrated AGC. IC Role / Device Role / Timing Role: Gain-controlled preamplifier in half-duplex transceivers using G1 for fast gain adjustment during RX/TX transitions. Use Value: 10 MHz Cg1ss and 1.6 pF Cdss support broadband matching across 2.4–2.5 GHz without external tuning components. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-gate RF amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BF1108,115 | Higher VDS max (12 V), lower gfs (25 mS typ), 2.5 dB NF @ 900 MHz | Targeted at higher-voltage cellular front-ends; less suitable for low-voltage AGC-critical designs | Select when >10 V supply headroom exists and NF < 2 dB is not required |
| BFP181W,115 | Single-gate LNA, 2.1 dB NF @ 900 MHz, 18 dB Gp, no G1-based gain control | Used in fixed-gain receiver paths; lacks built-in AGC capability | Choose only if gain control is implemented externally via VGA or switched attenuators |
Compared with BF1108 and BFP181W, BF2040WE6814HTSA1 uniquely combines sub-2 dB noise figure, 45+ dB gain control, and AEC-Q101 qualification in a single SOT343 package - making it optimal for automotive and consumer RF front-ends demanding integrated AGC and thermal reliability.
Availability
BF2040WE6814HTSA1 is available at Aetrix Electronics and suitable for UHF TV tuners, satellite receivers, automotive digital radio modules, and ISM-band sensor transceivers requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for BF2040WE6814HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor leader headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer markets.
BF2040WE6814HTSA1 belongs to NXP's RF transistor product line, engineered specifically for high-linearity, low-noise amplification in analog front-ends where dual-gate control and AEC-Q101 reliability are mandatory.
FAQ
What is the recommended gate 2 bias voltage for optimal noise figure?
The datasheet specifies VG2S = 4 V as the standard operating condition for achieving 1.6 dB typical noise figure at 800 MHz. Deviating below 3.5 V increases NF due to reduced channel conductivity; exceeding 4.5 V risks exceeding ±IG1/2SM = 10 mA rating and degrades long-term reliability.
Can BF2040WE6814HTSA1 be used in 2.4 GHz ISM-band applications?
Yes - its gain and noise characteristics are verified up to 1 GHz, but measured data shows usable gain (>10 dB) and NF (<3.5 dB) at 2.4 GHz when operated at ID = 10 mA and VDS = 5 V. Layout must minimize parasitic inductance on G1 and S pins to maintain stability.
Is the SOT343 package lead-free and RoHS compliant?
Yes - BF2040WE6814HTSA1 uses a Pb-free SOT343 package fully compliant with EU RoHS Directive 2011/65/EU and JEDEC JS-001 Class 2B ESD handling standards. The marking "W" in the type code explicitly denotes RoHS-compliant packaging.
How does thermal resistance differ between BF2040W and BF2040R variants?
BF2040W (SOT343) has Rthchs ≤ 280 K/W, while BF2040R (SOT143R) is rated ≤ 370 K/W. This 24% lower thermal resistance enables BF2040W to sustain 200 mW total power dissipation at TS ≤ 94 °C, versus 76 °C for BF2040R - critical for compact, high-density RF layouts.
BF2040WE6814HTSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- SC-82A, SOT-343
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N-Channel
- Frequency:
- 800MHz
- Gain:
- 23dB
- Voltage - Test:
- 5 V
- Current Rating (Amps):
- 40mA
- Noise Figure:
- 1.6dB
- Current - Test:
- 15 mA
- Power - Output:
- -
- Voltage - Rated:
- 8 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT343-3D
BF2040WE6814HTSA1 FAQ
1.How can I place an order for BF2040WE6814HTSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BF2040WE6814HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BF2040WE6814HTSA1 reliable?
The price and inventory of BF2040WE6814HTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BF2040WE6814HTSA1 is usually 5 days.
3.What payment methods are accepted for BF2040WE6814HTSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BF2040WE6814HTSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BF2040WE6814HTSA1?
BF2040WE6814HTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BF2040WE6814HTSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BF2040WE6814HTSA1?
For technical support, including BF2040WE6814HTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BF2040WE6814HTSA1 requirements.
6.How does Aetrix verify that BF2040WE6814HTSA1 is sourced from the original manufacturer or authorized distributors?
All BF2040WE6814HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BF2040WE6814HTSA1 meets industry standards.
7.What is the process for return or replacement of BF2040WE6814HTSA1?
All BF2040WE6814HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BF2040WE6814HTSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BF2040WE6814HTSA1 part is unused and in its original packaging.
Return procedure for BF2040WE6814HTSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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