Infineon Technologies BF2040WH6814XTSA1

Overview

BF2040WH6814XTSA1 from Nexperia is a silicon N-channel dual-gate MOSFET tetrode designed for low-noise, high-gain RF amplification in input stages up to 1 GHz. It operates at 5 V, delivers 23 dB typical power gain at 800 MHz, achieves 1.6 dB typical noise figure, supports 50 µA max gate leakage, and is qualified to AEC-Q101 for automotive front-end modules.

For engineers reviewing the BF2040WH6814XTSA1 datasheet, BF2040WH6814XTSA1 pinout, BF2040WH6814XTSA1 application, or BF2040WH6814XTSA1 equivalent, this device is selected for RF signal conditioning where gain control range (>45 dB), thermal resistance (≤280 K/W), and SOT343 package compatibility are critical design constraints.

Technical Context

This tetrode integrates two independent gates (G1 and G2) enabling simultaneous bias control and AGC functionality: G2 sets channel conduction (V_G2S(p) = 0.3–0.7 V), while G1 provides fine gain modulation with 45–50 dB control range at 800 MHz. Its 2.9 pF typical C_g1ss and 1.6 pF C_dss support stable matching in UHF LNA designs.

The device uses a fully isolated SOT343 package with 4-pin configuration (D, S, G1, G2), rated for 150 °C channel temperature and 200 mW total power dissipation at T_S ≤ 94 °C - optimized for thermally constrained RF front-ends in automotive radar receivers and broadcast tuners.

Key Specifications

Pinout & Package

SOT343 surface-mount package: 1.3 mm × 1.7 mm footprint, 0.95 mm height, lead-free (RoHS compliant), rated for reflow soldering per JEDEC J-STD-020.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-gate MOSFET amplifier applications.

Compared with BF1108 and BFP181, BF2040WH6814XTSA1 uniquely combines AEC-Q101 qualification, integrated dual-gate AGC, and SOT343 thermal efficiency - making it the only option meeting automotive RF front-end requirements without design compromises.

Availability

BF2040WH6814XTSA1 is available at Aetrix Electronics and suitable for AM/FM radio tuners, automotive digital broadcast receivers, and UHF wireless microphone receivers requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for BF2040WH6814XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability logic, discrete, and MOSFET solutions - serving automotive, industrial, and consumer markets with ISO/TS 16949-certified manufacturing.

BF2040WH6814XTSA1 belongs to Nexperia's RF tetrode product line, engineered specifically for low-noise, gain-controllable amplification in automotive and broadcast receiver front-ends up to 1 GHz.

FAQ

What is the maximum operating frequency for stable gain in BF2040WH6814XTSA1?

The device delivers verified power gain up to 1 GHz per datasheet characterization, with 23 dB typical G_p at 800 MHz and usable gain maintained through 950 MHz in common-source configurations with proper layout and matching networks.

How does the dual-gate structure improve AGC performance compared to single-gate MOSFETs?

G2 establishes stable DC conduction while G1 modulates transconductance without disturbing bias - achieving 45 dB gain control range with <1% gain error across temperature, unlike single-gate devices requiring complex feedback loops or external attenuators.

Is BF2040WH6814XTSA1 compatible with lead-free reflow profiles?

Yes - the SOT343 package is RoHS-compliant and qualified for standard lead-free reflow per JEDEC J-STD-020, with peak temperature tolerance up to 260°C for 30 seconds and thermal resistance validated at T_S ≤ 94 °C.

What is the recommended gate bias sequence during power-up?

Apply V_G2S first to establish channel conduction, then ramp V_G1S to set desired gain level - preventing transient overshoot that could exceed ±10 mA gate current limits or induce oscillation in unbuffered AGC paths.