Infineon Technologies BF5020WH6327XTSA1

Overview

BF5020WH6327XTSA1 from Infineon Technologies is a silicon N-channel dual-gate MOSFET tetrode optimized for low-noise, high-gain UHF/VHF tuner front-ends operating from 3 V to 5 V supply. It delivers typ. 34 mS forward transconductance, 1.2 dB noise figure at 800 MHz, and 45 dB gain control range with integrated gate protection diodes. Used in analog TV and FM radio tuners for AGC-controlled HF signal amplification.

For engineers reviewing the BF5020WH6327XTSA1 datasheet, BF5020WH6327XTSA1 pinout, BF5020WH6327XTSA1 application, or BF5020WH6327XTSA1 equivalent, key selection criteria include dual-gate biasing flexibility (VG1S(p) = 0.7 V, VG2S(p) = 0.7 V), cross-modulation suppression (≤98 dBµV at 40 dB AGC), and SOT343 package thermal resistance (Rthchs ≤ 280 K/W).

Technical Context

This tetrode uses independent gate control: Gate 2 (G2) sets channel current and gain via AGC voltage (0–4 V), while Gate 1 (G1) provides high-impedance RF input with typ. 2.4 pF Cg1ss. Its dual-gate architecture enables stable gain control without degrading noise performance - F remains ≤1.2 dB across 45–800 MHz.

The device features ESD-sensitive construction (HBM Class 1B), integrated gate protection diodes, and AEC-Q101 qualification for automotive tuner modules. Thermal design must respect TS ≤ 94 °C for the BF5020W variant, with Ptot derating to 200 mW at that junction temperature limit.

Key Specifications

Pinout & Package

BF5020WH6327XTSA1 is housed in a RoHS-compliant SOT343 (SC-82AB) plastic surface-mount package, measuring 2.4 mm × 1.3 mm × 0.9 mm, with gull-wing leads and exposed drain pad for thermal enhancement.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-gate MOSFET amplifier applications.

Compared with BFP181XK and NE85633, BF5020WH6327XTSA1 uniquely balances low-noise (1.2 dB), wide AGC range (45 dB), and compact SOT343 thermal performance - making it optimal for next-generation tuner IC co-integration where space, noise, and dynamic range are jointly constrained.

Availability

BF5020WH6327XTSA1 is available at Aetrix Electronics and suitable for analog TV tuners, FM radio receivers, digital terrestrial TV (DTT) modules, and portable media player RF front-ends requiring stable component supply across automotive, consumer, and industrial production cycles.

Supply support for BF5020WH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive electronics, with global R&D and manufacturing infrastructure.

BF5020WH6327XTSA1 belongs to Infineon's RF transistor product line, engineered specifically for high-performance, low-noise, gain-controllable amplifier stages in broadcast receiver tuners.

FAQ

What is the recommended gate biasing network for BF5020WH6327XTSA1 in a 5 V tuner application?

For 5 V operation, Gate 2 (G2) should be biased between 0 V and 4 V via a DAC or potentiometer for AGC; Gate 1 (G1) requires a 120 kΩ resistor to VGG (typically 1.2–1.5 V) to set ID ≈ 10 mA. A 4.7 nF AC-coupling capacitor isolates DC bias from the RF input path, preserving impedance matching.

Does BF5020WH6327XTSA1 require external ESD protection in addition to its integrated diodes?

No - BF5020WH6327XTSA1 includes monolithically integrated gate protection diodes rated for HBM Class 1B (≥2 kV). However, proper PCB layout (short traces, ground plane proximity) and handling per ESD-sensitive device protocols remain mandatory to prevent latch-up or parametric shift during assembly.

How does the cross-modulation performance change with AGC voltage in BF5020WH6327XTSA1?

Cross-modulation improves with increasing AGC voltage: Xmod measures 106 dBµV at AGC = 0 dB, 96 dBµV at AGC = 40 dB. This 10 dB improvement reflects reduced intermodulation distortion as gain is compressed - critical for rejecting adjacent-channel interference in dense broadcast spectra.

Can BF5020WH6327XTSA1 operate reliably at 3.3 V supply in portable applications?

Yes - the device is characterized from 3 V to 5 V. At 3.3 V, IDSS remains ≥100 mA and gfs stays ≥30 mS, supporting full gain control range. Derating of Ptot to ~160 mW is advised due to lower thermal headroom, but noise figure holds within 0.1 dB of 5 V performance.