Infineon Technologies BF 5030 E6327

Overview

BF5030 E6327 from Infineon Technologies is a silicon N-channel dual-gate MOSFET tetrode designed for UHF/VHF tuner input stages with AGC functionality. It supports 3 V and 5 V operation, features integrated ESD gate protection diodes, delivers typ. 41 mS forward transconductance at 10 mA, achieves typ. 0.9 dB noise figure at 45 MHz, and is qualified to AEC-Q101 for automotive tuner modules.

For engineers reviewing the BF5030 E6327 datasheet, BF5030 E6327 pinout, BF5030 E6327 application in tuner front-ends, or BF5030 E6327 equivalent for low-noise RF gain control, this page provides verified package mapping, AGC-dependent gain control range (45–50 dB), cross-modulation performance (≥90 dB), thermal resistance (R_thchs ≤ 370 K/W), and SOT143 pin configuration.

Technical Context

This dual-gate MOSFET uses independent G1 (signal input) and G2 (AGC control) terminals to enable voltage-controlled gain reduction without signal path interruption. Its tetrode structure isolates RF input (G1) from AGC bias (G2), maintaining stable input impedance across gain settings.

It operates with V_DS up to 8 V, supports continuous I_D of 25 mA, and achieves typ. 34 dB power gain at 45 MHz under 5 V/10 mA conditions. The device's low C_g1ss (2.7 pF typ.) and C_dss (1.5 pF typ.) minimize Miller effect and ensure broadband stability in VHF/UHF amplifiers.

Key Specifications

Pinout & Package

SOT143 package: 4-pin plastic surface-mount package with exposed drain pad for thermal dissipation; pin 1 = Source, pin 2 = Drain, pin 3 = Gate 2 (AGC), pin 4 = Gate 1 (RF input).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-gate MOSFET amplifier applications.

Compared with BFP181W and MRF901, BF5030 E6327 uniquely integrates dual-gate AGC control, on-chip ESD protection, and AEC-Q101 qualification-making it the only drop-in solution for automotive and consumer tuner designs requiring analog gain adjustment without added components.

Availability

BF5030 E6327 is available at Aetrix Electronics and suitable for FM radio tuners, digital terrestrial TV receivers, automotive DAB modules, and portable media player tuner designs requiring stable component supply and automotive-grade reliability.

Supply support for BF5030 E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and RF solutions, with global manufacturing and quality certification to ISO/TS 16949.

The BF5030 belongs to Infineon's RF Transistor product line, engineered specifically for high-linearity, low-noise amplification in broadcast tuner front-ends with integrated AGC functionality.

FAQ

What is the maximum allowable gate 1-source voltage for BF5030 E6327?

The maximum rated +V(BR)G1SS is 15 V under test condition +I_G1S = 10 mA, V_G2S = 0 V, V_DS = 0 V. However, normal operation limits V_G1S to ≤ ±6 V per absolute maximum ratings. Exceeding ±6 V risks permanent gate oxide damage even if below 15 V breakdown threshold.

How does the AGC function affect noise figure in BF5030 E6327?

As V_G2S decreases from 4 V to 0 V (5 V operation), noise figure increases from 0.9 dB to 1.3 dB at 45 MHz. This trade-off occurs because gain reduction lowers transconductance, raising relative contribution of channel thermal noise-verified in Figure 7 of the official datasheet.

Can BF5030 E6327 be used in common-drain (source-follower) configuration?

No-BF5030 E6327 is optimized for common-source operation with source grounded. Its tetrode structure lacks internal body diode connection or substrate tap, and pinout (S-G2-G1-D) does not support stable source-follower biasing. Common-source is the only validated configuration per Infineon application notes.

What is the thermal derating behavior above 94 °C ambient for BF5030 E6327?

At T_S > 94 °C, total power dissipation must be linearly reduced from 200 mW using R_thchs ≤ 370 K/W. For example, at 110 °C case temperature, P_tot must not exceed 148 mW to maintain channel temperature ≤ 150 °C, per Figure 5 in the datasheet.