Infineon Technologies BF 5030R E6327

Overview

BF5030R E6327 from Infineon Technologies is a silicon N-channel tetrode MOSFET designed for UHF/VHF tuner input stages with AGC functionality. It supports dual supply operation (3 V and 5 V), features integrated ESD gate protection diodes, delivers a typical noise figure of 0.9 dB at 45 MHz, achieves 34 dB power gain at 45 MHz, and is qualified to AEC-Q101 for automotive tuner modules.

For engineers reviewing the BF5030R E6327 datasheet, BF5030R E6327 pinout, BF5030R E6327 application in RF front-ends, or BF5030R E6327 equivalent for low-noise VHF amplifier designs, this page provides verified electrical parameters, package mapping to SOT143R, thermal resistance data (R_thchs ≤ 370 K/W), and real-world AGC performance metrics including 45–50 dB gain control range and ≥92 dB cross-modulation suppression.

Technical Context

This tetrode MOSFET uses two independent gates (G1 and G2) to decouple signal amplification (G2-controlled channel conduction) from AGC bias control (G1-adjusted transconductance). Its low C_g1ss (2.7–2.8 pF) and C_dss (1.5–1.6 pF) minimize feedback and stabilize high-frequency gain up to 800 MHz.

The device operates with V_DS up to 8 V and I_D up to 25 mA, with pinch-off voltages of 0.7 V for both gates. Its g_fs reaches 41 mS at 10 mA drain current, enabling high forward transadmittance while maintaining sub-1.3 dB noise figure across VHF/UHF bands.

Key Specifications

Pinout & Package

BF5030R is housed in a RoHS-compliant SOT143R plastic package with 4 leads, optimized for high-frequency PCB layout and thermal management in compact tuner modules.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-gate RF amplifier applications.

Compared with BFP181W and BF998, BF5030R E6327 uniquely integrates AGC control within a single AEC-Q101-qualified tetrode, delivering superior noise performance (0.9 dB), tighter thermal resistance (≤370 K/W), and guaranteed gain control range (45–50 dB) without external components.

Availability

BF5030R E6327 is available at Aetrix Electronics and suitable for analog TV tuners, FM radio receivers, UHF digital TV modules, and automotive infotainment systems requiring stable component supply and long-term lifecycle support.

Supply support for BF5030R E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive electronics, with global manufacturing and quality certification to ISO/TS 16949.

BF5030R belongs to Infineon's BFR/BF series of high-frequency tetrode MOSFETs, engineered specifically for low-noise, AGC-capable RF amplification in broadcast and automotive tuner applications.

FAQ

What is the maximum safe drain-source voltage for BF5030R E6327?

The absolute maximum drain-source voltage (V_DS) is 8 V. Operation above this value risks irreversible breakdown, especially under RF signal swing conditions. The device is rated for 5 V DC supply with peak RF excursions remaining within this limit-designers must ensure AC+DC envelope stays below 8 V at the drain node.

How does the dual-gate configuration enable AGC functionality?

G2 serves as the signal gate, biased at 3–4 V for optimal gain and noise; G1 acts as the AGC gate, where varying its voltage (0–3 V) modulates channel conductance without disturbing G2 bias. This decoupled control allows >45 dB gain reduction while preserving linearity and minimizing intermodulation distortion in tuner front-ends.

Is BF5030R E6327 suitable for 800 MHz operation?

Yes-electrical characteristics confirm 24 dB power gain and 1.3 dB noise figure at 800 MHz under standard test conditions (V_DS = 3 V, I_D = 10 mA, V_G2S = 3 V). Layout best practices (short traces, grounded source pad, proper decoupling) are required to maintain stability and match specified RF performance.

What thermal derating applies above 94 °C case temperature?

For BF5030R (SOT143R), total power dissipation must be linearly derated above T_S = 94 °C at 2.14 mW/°C, based on R_thchs ≤ 370 K/W. At 125 °C case temperature, maximum allowable P_tot drops to 136 mW to prevent junction temperature exceeding 150 °C.