Infineon Technologies BF5030WH6327XTSA1

Overview

BF5030WH6327XTSA1 from Infineon Technologies is a silicon N-channel dual-gate MOSFET tetrode designed for UHF/VHF tuner input stages with AGC functionality. It supports 3 V and 5 V operation, features integrated ESD gate protection diodes, delivers 41 mS forward transconductance at 10 mA, achieves 0.9 dB noise figure at 45 MHz, and is qualified to AEC-Q101 for automotive tuner applications.

For engineers reviewing the BF5030WH6327XTSA1 datasheet, BF5030WH6327XTSA1 pinout, BF5030WH6327XTSA1 application, or BF5030WH6327XTSA1 equivalent, key selection criteria include dual-gate AGC control range (50 dB at 800 MHz), low-noise RF amplification capability, SOT343 package thermal resistance (≤280 K/W), and guaranteed V(BR)DS ≥12 V under specified bias conditions.

Technical Context

This tetrode operates with independent gate control: Gate 2 (G2) serves as the AGC voltage-controlled gain modulator, while Gate 1 (G1) functions as the RF signal input terminal. Its dual-gate architecture enables precise gain reduction without degrading noise performance or linearity across wide frequency bands.

The device exhibits high forward transadmittance (gfs = 41 mS typ.) and ultra-low noise figure (0.9 dB typ. at 45 MHz), optimized for front-end amplification in broadcast tuners where simultaneous sensitivity and dynamic range are critical. Cross-modulation suppression exceeds 92 dB under 40 dB AGC range conditions.

Key Specifications

Pinout & Package

BF5030WH6327XTSA1 is housed in a RoHS-compliant SOT343 (SC-88) plastic surface-mount package with 4 terminals and exposed drain pad for thermal enhancement.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-gate RF amplifier applications.

Compared with BFP740FESD and MRF901, BF5030WH6327XTSA1 uniquely integrates dual-gate AGC control, on-chip ESD protection, and automotive qualification in a single SOT343 package-reducing bill-of-materials count and improving tuner system robustness without sacrificing noise or linearity.

Availability

BF5030WH6327XTSA1 is available at Aetrix Electronics and suitable for automotive digital TV tuners, terrestrial broadcast receivers, UHF RFID readers, and FM radio IF amplifiers requiring stable component supply and AEC-Q101 compliance.

Supply support for BF5030WH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and RF solutions, with global manufacturing and R&D infrastructure.

BF5030WH6327XTSA1 belongs to Infineon's BFP/BF series of RF transistors, engineered specifically for high-performance, low-noise, dual-gate amplification in broadcast and wireless receiver front-ends.

FAQ

What is the maximum allowable gate voltage for G1 and G2?

The absolute maximum gate-source voltage for both G1 and G2 is ±6 V. Exceeding this rating risks permanent damage to the gate oxide. In normal operation, VG1S is biased near 0 V for RF input, while VG2S is swept from 0 to 4 V for AGC control-well within safe limits and verified by AEC-Q101 stress testing.

How does the SOT343 package affect thermal performance compared to SOT143?

The SOT343 package used in BF5030WH6327XTSA1 has a lower thermal resistance (≤280 K/W) than SOT143 variants (≤370 K/W), enabling 200 mW power dissipation at a lower case temperature (TS ≤ 76 °C vs. ≤94 °C). This allows tighter thermal design margins in space-constrained tuner modules.

Can BF5030WH6327XTSA1 be used in 5G sub-6 GHz applications?

No-BF5030WH6327XTSA1 is characterized up to 800 MHz and optimized for broadcast bands (45–862 MHz). Its gain and noise performance degrade significantly above 1 GHz. For sub-6 GHz 5G FR1 applications, Infineon's BFP740FESD or BGA725L6 are recommended alternatives with validated performance to 6 GHz.

Is external ESD protection required despite integrated diodes?

No external ESD protection is required for standard handling and PCB assembly. The integrated gate protection diodes meet ±1 kV HBM per IEC 61000-4-2 Level 2. However, direct contact with ungrounded personnel or equipment during manual probing still requires standard ESD precautions as noted in the device marking ("ESD sensitive device").