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NXP Semiconductors BF545A,215
- Part No.:
- BF545A,215
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
BF545A,215.pdf
- Description:
- RF MOSFET JFET 30V SOT23
- Quantity:
- Payment:
- Shipping:
Inventory:7,371
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Product details
Overview
BF545A,215 from NXP Semiconductors is an N-channel silicon junction field-effect transistor (JFET) in SOT23 package, designed for low-noise, high-impedance signal conditioning. It delivers IDSS = 2–6.5 mA, VGS(off) = −0.4 to −2.2 V, |yfs| = 3–6.5 mS, and ultra-low gate leakage (typ. 500 fA), enabling precision use in electret microphone impedance converters and VHF oscillator front-ends.
For engineers reviewing the BF545A,215 datasheet, BF545A,215 pinout, BF545A,215 application, or BF545A,215 equivalent, this page provides verified static/dynamic parameters, SOT23 terminal mapping, real-world use cases in audio and RF signal chains, and two validated alternative JFETs with documented parameter divergence.
Technical Context
The BF545A,215 operates as a depletion-mode N-channel JFET with symmetrical source/drain terminals and reverse-biased gate junction. Its cutoff voltage range (−0.4 V to −2.2 V) and low input capacitance (Ciss = 3 pF at VGS = 0 V) support stable biasing in high-impedance AC-coupled amplifiers and tuned RF stages up to 450 MHz.
It exhibits forward transfer admittance |yfs| = 3–6.5 mS at VDS = 15 V and VGS = 0 V, with common-source output admittance |yos| = 40 µS - confirming suitability for low-distortion small-signal amplification where gain stability and minimal Miller effect are critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| IDSS | 2–6.5 mA at VGS = 0 V, VDS = 15 V: sets DC operating point for amplifier bias networks. |
| VGS(off) | −0.4 to −2.2 V at ID = 1 µA, VDS = 15 V: defines gate voltage required to pinch off conduction. |
| |yfs| | 3–6.5 mS at VGS = 0 V, VDS = 15 V: determines small-signal transconductance and voltage gain potential. |
| Ciss | 3 pF at VGS = 0 V, VDS = 15 V, f = 1 MHz: limits high-frequency bandwidth and input loading in RF circuits. |
| IGSS | −0.5 to −1000 pA at VGS = −20 V, VDS = 0 V: enables ultra-high input impedance (>1012 Ω) in sensor interfaces. |
| Ptot | 250 mW at Tamb ≤ 25 °C: constrains maximum dissipation without heatsinking in SOT23 layout. |
| Rth(j-a) | 500 K/W on FR4 PCB: informs thermal design margin for continuous operation near rated power. |
Pinout & Package
SOT23 plastic surface-mounted package (TO-236AB), 3-lead, 1.3 mm × 2.9 mm footprint, 0.95 mm height, with gull-wing leads and exposed drain pad for thermal relief.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Source (S) | Reference node for gate control; symmetrical with drain in JFET operation. |
| 2 | Drain (D) | Output current path; electrically tied to thermal pad for heat dissipation. |
| 3 | Gate (G) | High-impedance control terminal; reverse-biased junction requires ESD-safe handling. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low gate leakage | Typ. 500 fA enables >1012 Ω input impedance for electret mic preamps and IR detector buffers. |
| Controlled VGS(off) range | −0.4 to −2.2 V ensures predictable bias point selection in discrete amplifier designs. |
| High forward transfer admittance | |yfs| = 3–6.5 mS supports >20 dB small-signal gain in single-stage VHF amplifiers. |
| Low input capacitance | Ciss = 3 pF at VGS = 0 V minimizes loading on tuned tank circuits in oscillators and mixers. |
| ESD-sensitive construction | Requires IEC 61000-4-2 Level 2 handling; gate protection diodes not integrated. |
Applications
| Electret Microphone Impedance Converter | VHF Oscillator Core |
|---|---|
Use Scenario: Converts high-impedance output of electret condenser microphone capsule into low-impedance signal for downstream op-amp buffering. IC Role / Device Role / Timing Role: JFET acts as unity-gain source follower with ultra-high input Z and low noise floor. Use Value: 500 fA gate leakage preserves capsule bias voltage; 3–6.5 mS yfs ensures stable gain across production lots. |
Use Scenario: Forms active device in Colpitts or Clapp oscillator topology generating 30–300 MHz carrier signals. IC Role / Device Role / Timing Role: JFET provides tunable negative resistance and low-phase-noise amplification in resonant loop. Use Value: 3 pF Ciss and 40 µS yos minimize frequency drift; symmetrical S/D allows flexible feedback tap placement. |
| IR Detector Preamplifier | VHF Mixer Active Element |
Use Scenario: Amplifies weak photocurrent from infrared photodiode in proximity or motion sensing systems. IC Role / Device Role / Timing Role: JFET configured as common-source amplifier with capacitive coupling and DC bias stabilization. Use Value: −2.2 V max VGS(off) enables robust biasing under temperature variation; low 1/f noise improves SNR at sub-kHz frequencies. |
Use Scenario: Serves as switching/active element in passive or active double-balanced mixer for RF receiver front-end. IC Role / Device Role / Timing Role: JFET leverages symmetrical structure and low Crss (0.9 pF) to suppress LO feedthrough. Use Value: 450 MHz gfs = 1.8 mS sustains conversion gain; low IGSS prevents DC offset accumulation at IF output. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar JFET amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| J310 | VGS(off) = −0.5 to −3.5 V; IDSS = 24–60 mA; Ciss = 4 pF; no specified IGSS < 1 pA. | Higher IDSS enables higher gain but increases quiescent current; less suitable for ultra-low-power mic biasing. | Select when higher transconductance and wider VGS(off) spread are acceptable for adjustable bias networks. |
| 2N4416A | VGS(off) = −0.5 to −6.0 V; IDSS = 5–15 mA; |yfs| = 4–12 mS; Ciss = 5 pF; IGSS not characterized below 1 nA. | Higher capacitance degrades VHF performance; broader VGS(off) range complicates consistent biasing. | Prefer for general-purpose RF amplification where tighter VGS(off) tolerance is not required. |
Compared with BF545A,215, J310 offers higher gain but looser cutoff control and no guaranteed femtoamp leakage, while 2N4416A trades higher transconductance for increased input capacitance and less precise VGS(off) - making BF545A,215 optimal for low-noise, low-leakage, VHF-stable designs.
Availability
BF545A,215 is available at Aetrix Electronics and suitable for electret microphone interfaces, VHF oscillator circuits, and IR detector preamplifiers requiring stable component supply, traceable lot history, and long-term obsolescence management.
Supply support for BF545A,215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions, automotive ICs, and analog/mixed-signal components.
The BF545A,215 belongs to NXP's legacy silicon JFET family targeting high-fidelity audio and VHF analog signal conditioning - engineered for low-noise, high-Z interfacing in space-constrained portable and sensor systems.
FAQ
What is the maximum drain-source voltage rating for BF545A,215?
The absolute maximum drain-source voltage (VDS) for BF545A,215 is ±30 V under DC conditions, per IEC 60134 limiting values. Operation beyond this risks permanent junction breakdown. Derating is required above Tamb = 25 °C per the published power derating curve.
Does BF545A,215 have a specified gate-source leakage current at elevated temperature?
Yes - BF545A,215 specifies IGSS ≤ −100 nA at VGS = −20 V, VDS = 0 V, and Tj = 125 °C. At room temperature (25 °C), typical leakage is 500 fA, confirming its suitability for ultra-high-impedance bias networks in temperature-stable designs.
Can BF545A,215 be used in place of BF545B or BF545C in a circuit?
No - BF545A,215 has distinct IDSS (2–6.5 mA) and VGS(off) (−0.4 to −2.2 V) versus BF545B (IDSS = 6–15 mA, VGS(off) = −1.6 to −3.8 V) and BF545C (IDSS = 12–25 mA, VGS(off) = −3.2 to −7.8 V). Substituting alters bias point and gain; redesign is required.
What is the thermal resistance from junction to ambient for BF545A,215 on FR4 PCB?
The typical thermal resistance (Rth(j-a)) for BF545A,215 mounted on FR4 with 4 mm lead length and 10 mm² drain pad is 500 K/W. This value assumes standard JEDEC test conditions and must be factored into power dissipation limits at elevated ambient temperatures.
Is BF545A,215 suitable for automotive applications?
No - BF545A,215 is not automotive-qualified. The NXP datasheet explicitly states it is "not suitable for automotive use" and lacks AEC-Q101 qualification, temperature grade extension, or automotive-specific reliability testing. Use only in industrial, consumer, or communications equipment.
BF545A,215 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- JFET
- Configuration:
- N-Channel
- Frequency:
- -
- Gain:
- -
- Voltage - Test:
- -
- Current Rating (Amps):
- 6.5mA
- Noise Figure:
- -
- Current - Test:
- -
- Power - Output:
- -
- Voltage - Rated:
- 30 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23 (TO-236AB)
BF545A,215 FAQ
1.How can I place an order for BF545A,215 through Aetrix?
Please submit a Request for Quotation (RFQ) for BF545A,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BF545A,215 reliable?
The price and inventory of BF545A,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BF545A,215 is usually 5 days.
3.What payment methods are accepted for BF545A,215?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BF545A,215 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BF545A,215?
BF545A,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BF545A,215 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BF545A,215?
For technical support, including BF545A,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BF545A,215 requirements.
6.How does Aetrix verify that BF545A,215 is sourced from the original manufacturer or authorized distributors?
All BF545A,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BF545A,215 meets industry standards.
7.What is the process for return or replacement of BF545A,215?
All BF545A,215 units undergo pre-shipment inspection (PSI). If there is an issue with BF545A,215, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BF545A,215 part is unused and in its original packaging.
Return procedure for BF545A,215:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BF545A,215 Tags
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