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NXP Semiconductors BF545B,215
- Part No.:
- BF545B,215
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
BF545B,215.pdf
- Description:
- RF MOSFET JFET 30V SOT23
- Quantity:
- Payment:
- Shipping:
Inventory:2,950
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Product details
Overview
BF545B,215 from NXP Semiconductors is an N-channel silicon junction field-effect transistor (JFET) in SOT23 package, designed for low-noise, high-input-impedance signal conditioning. It delivers IDSS = 6–15 mA, VGSoff = −1.6 to −3.8 V, and |yfs| = 3–6.5 mS at VDS = 15 V, enabling stable operation in electret microphone preamplifiers and VHF oscillator stages.
For engineers reviewing the BF545B,215 datasheet, BF545B,215 pinout, BF545B,215 application, or BF545B,215 equivalent, key selection criteria include gate leakage (≤1000 pA), cut-off voltage tolerance, drain-source voltage rating (±30 V), and SOT23 thermal resistance (500 K/W) in compact audio and RF front-end designs.
Technical Context
The BF545B,215 operates as a depletion-mode JFET with symmetrical source/drain terminals and reverse-biased gate junction. Its static characteristics are defined at Tj = 25 °C with VDS = 15 V, supporting precise biasing via VGSoff specification and predictable IDSS spread across manufacturing lots.
Dynamic performance includes Ciss = 3 pF and Crss = 0.9 pF at VGS = 0 V, f = 1 MHz, and gis = 300 µS at 450 MHz - confirming suitability for VHF amplification and mixer applications where low capacitance and high transconductance stability are critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| IDSS | 6–15 mA at VGS = 0 V, VDS = 15 V: sets DC operating point for amplifier gain and linearity. |
| VGSoff | −1.6 to −3.8 V at ID = 200 µA, VDS = 15 V: defines gate voltage required to pinch off channel; critical for bias network design. |
| |yfs| | 3–6.5 mS at VGS = 0 V, VDS = 15 V: quantifies small-signal transconductance for gain calculation in common-source stages. |
| VDS | ±30 V maximum: supports rail-to-rail signal swing in low-voltage audio and RF circuits without breakdown. |
| IGSS | ≤ −1000 pA at VGS = −20 V, VDS = 0 V: ensures ultra-low gate leakage for high-impedance node stability over temperature. |
| Ptot | 250 mW at Tamb ≤ 25 °C: limits power handling in SOT23; requires derating above ambient temperature per Fig 1. |
| Rth(j-a) | 500 K/W on FR4 PCB: determines junction temperature rise under load; impacts long-term reliability in sealed enclosures. |
Pinout & Package
SOT23 plastic surface-mounted package (TO-236AB), 3-lead, dimensions per Fig 23: D = 2.8 mm, E = 1.4 mm, Lp = 0.95 mm, e = 1.9 mm, bp = 0.48 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Source (S) | Reference terminal for gate voltage; symmetrical with drain in JFET operation; connects to ground or bias network. |
| 2 | Drain (D) | Output current terminal; carries amplified signal; requires thermal pad (10 mm²) on PCB per limiting values table. |
| 3 | Gate (G) | Control terminal; reverse-biased PN junction; must be protected from ESD per caution note in datasheet. |
Key Features
| Feature | Design Value |
|---|---|
| Low gate leakage | Typ. −0.5 pA at VGS = −20 V enables >10⁹ Ω input impedance in electret mic bias networks without drift. |
| High forward transfer admittance | 3–6.5 mS supports >20 dB small-signal gain in single-stage VHF amplifiers up to 450 MHz. |
| Controlled VGSoff spread | −1.6 to −3.8 V allows predictable DC biasing with standard resistor networks in production audio circuits. |
| SOT23 footprint compatibility | Standard 3-pin outline enables drop-in replacement across BF545A/B/C variants without layout change. |
| ESD sensitivity warning | Explicit CAUTION in datasheet mandates handling protocols to prevent gate oxide damage during assembly. |
Applications
| Electret Microphone Impedance Converter | VHF Oscillator Core |
|---|---|
|
Use Scenario: Converts high-impedance output of electret condenser microphone capsule into low-impedance signal for downstream op-amp buffering. IC Role / Device Role / Timing Role: JFET configured as common-source amplifier with source degeneration; provides unity-gain impedance transformation and DC bias stabilization. Use Value: Ultra-low IGSS (≤1000 pA) preserves capsule polarization voltage; VGSoff tolerance ensures consistent gain across production units. |
Use Scenario: Active device in Colpitts or Clapp oscillator topology generating stable 30–300 MHz carrier signals for IR remote control or low-power RF telemetry. IC Role / Device Role / Timing Role: Voltage-controlled current source sustaining tank circuit oscillation; leverages high |yfs| and low Crss for phase noise reduction. Use Value: Ciss = 3 pF and Crss = 0.9 pF minimize frequency pulling; SOT23 thermal mass aids short-term frequency stability under transient load. |
| VHF Mixer Stage | Low-Noise Preamp for IR Detectors |
|
Use Scenario: Passive or active mixer core in superheterodyne receiver front-end, translating VHF band signals to IF using local oscillator injection. IC Role / Device Role / Timing Role: Transconductance-based signal modulator; gate driven by LO, drain outputs mixed product; source tied to RF input. Use Value: Symmetrical S/D terminals simplify bidirectional RF path routing; gfs = 1.8 mS at 450 MHz maintains conversion efficiency above 200 MHz. |
Use Scenario: First amplification stage for photodiode or pyroelectric IR detector output, requiring minimal added noise and no DC offset shift. IC Role / Device Role / Timing Role: High-Z common-gate amplifier; isolates detector capacitance from load while preserving signal integrity. Use Value: Low VGSoff max (−3.8 V) allows use of single 5 V supply with simple gate bias; IDSS range enables gain tuning via source resistor. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar JFET amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| J310 | VGSoff = −0.5 to −3.5 V; IDSS = 24–60 mA; TO-92 package; higher gain but larger footprint. | Preferred in through-hole prototyping or higher-current bias designs; not SOT23-compatible. | Select J310 when board space permits larger package and higher IDSS improves SNR in low-frequency preamps. |
| 2N4416A | VGSoff = −1.5 to −5.0 V; IDSS = 5–15 mA; TO-92; similar VGSoff range but lower |yfs| (2–5 mS). | Better suited for general-purpose RF amplification below 100 MHz due to reduced high-frequency transconductance. | Choose 2N4416A for cost-sensitive industrial sensor interfaces where 450 MHz performance is unnecessary. |
Compared with J310 and 2N4416A, the BF545B,215 uniquely balances SOT23 compactness, VHF-capable transconductance (up to 6.5 mS), and tight VGSoff distribution - making it optimal for space-constrained, battery-powered audio/RF modules requiring repeatable biasing and low leakage.
Availability
BF545B,215 is available at Aetrix Electronics and suitable for electret microphone interfaces, VHF oscillator circuits, and IR detector preamplifiers requiring stable component supply and traceable sourcing.
Supply support for BF545B,215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer markets.
The BF545B,215 belongs to NXP's legacy silicon JFET portfolio, engineered for high-input-impedance analog signal conditioning in audio, sensing, and RF subsystems where low noise and predictable DC parameters are essential.
FAQ
What is the maximum drain-source voltage rating for BF545B,215?
The BF545B,215 has a maximum drain-source voltage (VDS) rating of ±30 V, as specified in Table 5 (Limiting Values) of the NXP datasheet Rev. 4. This absolute maximum rating applies under DC conditions with the device mounted on an FR4 PCB per defined thermal conditions. Exceeding this voltage risks permanent junction breakdown.
How does BF545B,215 differ from BF545A and BF545C in terms of IDSS and VGSoff?
The BF545B,215 specifies IDSS = 6–15 mA and VGSoff = −1.6 to −3.8 V (at ID = 200 µA), positioning it between BF545A (IDSS = 2–6.5 mA, VGSoff = −0.4 to −2.2 V) and BF545C (IDSS = 12–25 mA, VGSoff = −3.2 to −7.8 V). This mid-range performance makes BF545B,215 ideal for moderate-gain, low-noise applications requiring tighter VGSoff control than BF545C but higher drive than BF545A.
Is BF545B,215 suitable for surface-mount reflow soldering?
Yes, BF545B,215 is qualified for standard SMT reflow processes. Its SOT23 package complies with JEDEC standards, and the datasheet confirms thermal characteristics measured on FR4 PCBs with defined pad layouts. Peak reflow temperature must remain within JEDEC J-STD-020 limits for plastic packages (typically ≤260 °C for 10 s), and ESD precautions must be maintained before and after soldering.
What is the typical gate-source leakage current (IGSS) of BF545B,215 at room temperature?
The typical gate-source leakage current (IGSS) of BF545B,215 is −0.5 pA at VGS = −20 V and VDS = 0 V, with a maximum of −1000 pA under the same conditions (Table 7). At elevated temperature (Tj = 125 °C), IGSS increases to ≤ −100 nA - a critical parameter for maintaining bias stability in high-impedance microphone and sensor interfaces.
Does BF545B,215 have a specified input capacitance (Ciss) for RF design?
Yes, BF545B,215 specifies Ciss = 3 pF at VGS = 0 V, VDS = 15 V, and f = 1 MHz (Table 8). This value is essential for impedance matching and resonant circuit design in VHF oscillator and mixer applications. Ciss drops to 1.7 pF at VGS = −10 V, enabling tunable capacitance behavior in voltage-controlled oscillator (VCO) configurations.
BF545B,215 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- JFET
- Configuration:
- N-Channel
- Frequency:
- -
- Gain:
- -
- Voltage - Test:
- -
- Current Rating (Amps):
- 15mA
- Noise Figure:
- -
- Current - Test:
- -
- Power - Output:
- -
- Voltage - Rated:
- 30 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23 (TO-236AB)
BF545B,215 FAQ
1.How can I place an order for BF545B,215 through Aetrix?
Please submit a Request for Quotation (RFQ) for BF545B,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BF545B,215 reliable?
The price and inventory of BF545B,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BF545B,215 is usually 5 days.
3.What payment methods are accepted for BF545B,215?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BF545B,215 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BF545B,215?
BF545B,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BF545B,215 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BF545B,215?
For technical support, including BF545B,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BF545B,215 requirements.
6.How does Aetrix verify that BF545B,215 is sourced from the original manufacturer or authorized distributors?
All BF545B,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BF545B,215 meets industry standards.
7.What is the process for return or replacement of BF545B,215?
All BF545B,215 units undergo pre-shipment inspection (PSI). If there is an issue with BF545B,215, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BF545B,215 part is unused and in its original packaging.
Return procedure for BF545B,215:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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