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NXP Semiconductors BF545C,215
- Part No.:
- BF545C,215
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
BF545C,215.pdf
- Description:
- RF MOSFET JFET 30V SOT23
- Quantity:
- Payment:
- Shipping:
Inventory:7,078
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Product details
Overview
BF545C,215 from NXP Semiconductors is an N-channel silicon junction field-effect transistor (JFET) in SOT23 package, designed for low-noise, high-input-impedance signal amplification and impedance conversion. It delivers IDSS = 12–25 mA, VGSoff = −3.2 to −7.8 V, |yfs| = 3–6.5 mS, and operates up to VDS = ±30 V with Ptot = 250 mW at Tamb ≤ 25 °C - optimized for electret microphone preamplifiers and VHF oscillator stages.
For engineers reviewing the BF545C,215 datasheet, BF545C,215 pinout, BF545C,215 application, or BF545C,215 equivalent, key selection criteria include verified gate-source cutoff voltage range, drain current tolerance, forward transfer admittance at 15 V, input capacitance below 3 pF at VGS = 0 V, and ESD-sensitive handling requirements per IEC 61340-5-1.
Technical Context
The BF545C,215 is a symmetrical N-channel JFET with depletion-mode operation, requiring negative gate bias relative to source for channel control. Its static characteristics are defined at Tj = 25 °C with VDS = 15 V, and it exhibits low gate leakage (IGSS ≤ −1000 pA at VGS = −20 V) and high gain stability across temperature.
Dynamic performance includes Ciss = 3 pF and Crss = 0.9 pF at VGS = 0 V, f = 1 MHz, supporting stable operation in VHF amplifiers up to 450 MHz. The device's gis = 300 µS and gfs = 1.8 mS at 450 MHz confirm suitability for RF mixer and oscillator buffer applications where low noise and minimal Miller effect are critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| IDSS | 12–25 mA at VGS = 0 V, VDS = 15 V: sets DC operating point and gain linearity in amplifier bias networks. |
| VGSoff | −3.2 to −7.8 V at ID = 1 µA, VDS = 15 V: defines gate voltage threshold for channel pinch-off and usable gate swing range. |
| |yfs| | 3–6.5 mS at VGS = 0 V, VDS = 15 V: determines small-signal transconductance and voltage gain potential in common-source stages. |
| Ciss | 3 pF at VGS = 0 V, VDS = 15 V, f = 1 MHz: limits high-frequency bandwidth and input loading in RF front-end circuits. |
| Ptot | 250 mW at Tamb ≤ 25 °C: constrains maximum continuous power dissipation without heatsinking on FR4 PCBs. |
| Rth(j-a) | 500 K/W: indicates thermal resistance from junction to ambient, guiding layout decisions for trace width and copper area. |
| IGSS | ≤ −1000 pA at VGS = −20 V, VDS = 0 V: ensures ultra-low gate leakage for high-impedance sensor interfaces like electret microphones. |
Pinout & Package
SOT23 plastic surface-mounted package (TO-236AB), 3-lead, dimensions per JEDEC outline: D = 2.8 mm, E = 1.4 mm, Lp = 1.2 mm, e = 1.9 mm, bp = 0.48 mm. Device is ESD-sensitive - handling requires IEC 61340-5-1 compliant procedures.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Source (S) | Reference node for gate bias; connects to ground or bias network in common-source configurations. |
| 2 | Drain (D) | Output terminal carrying amplified signal current; requires thermal pad (10 mm²) on FR4 for full Ptot rating. |
| 3 | Gate (G) | High-impedance control terminal; must be protected from ESD and floating conditions during PCB handling and assembly. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low gate leakage | IGSS ≤ −1000 pA at −20 V enables >100 MΩ input impedance in microphone bias networks without droop. |
| High transconductance | |yfs| = 3–6.5 mS supports >20 dB voltage gain in single-stage VHF amplifiers with minimal external components. |
| Controlled cutoff voltage spread | VGSoff = −3.2 to −7.8 V allows predictable biasing across production lots without individual trimming. |
| Low input capacitance | Ciss = 3 pF at VGS = 0 V minimizes frequency-dependent phase shift in oscillator feedback paths. |
| SOT23 footprint compatibility | Standard 3-pin SOT23 layout enables drop-in replacement in space-constrained portable audio and RF modules. |
Applications
| Electret Microphone Preamp | VHF Oscillator Buffer |
|---|---|
Use Scenario: Low-noise amplification of 10–100 mV AC signals from electret condenser microphones in voice-recognition handsets. IC Role / Device Role / Timing Role: Impedance converter and voltage amplifier in common-source configuration with self-bias resistor network. Use Value: IGSS ≤ −1000 pA preserves DC bias stability over temperature, while IDSS = 12–25 mA ensures sufficient headroom for peak audio excursions without clipping. |
Use Scenario: Isolation and gain staging between Colpitts oscillator core and mixer input in 100–500 MHz RF front-ends. IC Role / Device Role / Timing Role: High-Z buffer amplifier maintaining oscillator Q-factor and minimizing frequency pulling from load variations. Use Value: Ciss = 3 pF and Crss = 0.9 pF reduce Miller feedback, enabling stable oscillation with <1% frequency drift under varying supply and temperature conditions. |
| Infrared Detector Interface | VHF Mixer Stage |
Use Scenario: Signal conditioning of weak photocurrent pulses (nA–µA) from pyroelectric IR sensors in motion-detection modules. IC Role / Device Role / Timing Role: Transimpedance amplifier front-end with JFET-based virtual-ground input stage. Use Value: Ultra-high input impedance (>1 GΩ effective) prevents signal attenuation and preserves rise time of fast IR pulses (<10 µs). |
Use Scenario: Active double-balanced mixing in 200–400 MHz receiver chains where LO drive level and port isolation are critical. IC Role / Device Role / Timing Role: Switching element in passive mixer topology, leveraging symmetrical N-channel structure for balanced RF/LO switching. Use Value: Symmetrical construction and low Crss enable >25 dB LO-to-RF isolation and <−15 dBm third-order intercept point in compact SOT23 layout. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel JFET amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| J310 | IDSS = 24–60 mA, VGSoff = −0.5 to −4.0 V, Ciss = 4 pF - higher gain but wider VGSoff spread and no guaranteed 250 mW rating. | Better suited for wide-range adjustable bias designs; less stable in fixed-bias electret mic circuits due to VGSoff variability. | Select J310 only when design accommodates manual bias tuning or uses active gate regulation. |
| 2N5457 | IDSS = 1–5 mA, VGSoff = −0.5 to −5.0 V, Ptot = 310 mW - lower IDSS and higher power rating, but Ciss = 5 pF degrades VHF response. | Preferred for low-current, high-voltage analog switches; unsuitable for >200 MHz oscillator buffers due to excessive input capacitance. | Choose 2N5457 for DC-coupled switching or low-frequency preamps where bandwidth <50 MHz is acceptable. |
Compared with J310 and 2N5457, the BF545C,215 offers tighter VGSoff control (−3.2 to −7.8 V), lower Ciss (3 pF), and guaranteed 250 mW dissipation - making it optimal for production-grade electret mic preamps and VHF oscillator buffers where repeatability and RF stability are mandatory.
Availability
BF545C,215 is available at Aetrix Electronics and suitable for electret microphone preamplifiers, VHF oscillator buffers, and infrared detector interfaces requiring stable component supply, consistent parametric binning, and ESD-safe logistics handling.
Supply support for BF545C,215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer applications.
The BF545C,215 belongs to NXP's legacy silicon JFET portfolio, engineered specifically for low-noise, high-impedance analog signal conditioning in portable audio, RF, and sensor interface systems.
FAQ
What is the maximum drain-source voltage rating for BF545C,215?
The BF545C,215 has a maximum drain-source voltage (VDS) rating of ±30 V under DC conditions, as specified in the Absolute Maximum Ratings table. This rating applies with the device mounted on an FR4 PCB using standard SOT23 pad layout and lead lengths ≤4 mm. Exceeding this voltage risks permanent junction breakdown.
Does BF545C,215 require external gate protection against ESD?
Yes - the BF545C,215 is explicitly marked as ESD-sensitive in its datasheet. Gate-source breakdown voltage is rated at −30 V, and IGSS increases significantly above −20 V. Handling must follow IEC 61340-5-1 protocols, and PCB layout should include series gate resistors (≥1 kΩ) and/or TVS diodes if exposed to user-accessible ports.
How does BF545C,215 differ from BF545B in terms of IDSS and VGSoff?
The BF545C,215 specifies IDSS = 12–25 mA and VGSoff = −3.2 to −7.8 V (at ID = 1 µA), whereas BF545B offers IDSS = 6–15 mA and VGSoff = −1.6 to −3.8 V. This makes BF545C,215 better suited for higher-gain, higher-current amplifier stages where tighter control over cutoff voltage is required for stable biasing.
Can BF545C,215 be used in common-gate amplifier configurations?
Yes - the BF545C,215's symmetrical N-channel structure and low Crss (0.9 pF) support stable common-gate operation. Its |yfs| = 3–6.5 mS and low input capacitance yield broadband current gain with minimal reverse transmission, making it viable for RF current buffers and cascode gain stages up to 450 MHz.
What is the thermal resistance from junction to ambient for BF545C,215?
The BF545C,215 has a typical thermal resistance Rth(j-a) of 500 K/W when mounted on an FR4 PCB with a 10 mm² copper pad on the drain lead and maximum lead length of 4 mm. This value assumes natural convection cooling and directly informs safe operating area calculations for continuous DC or pulsed operation.
BF545C,215 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- JFET
- Configuration:
- N-Channel
- Frequency:
- -
- Gain:
- -
- Voltage - Test:
- -
- Current Rating (Amps):
- 25mA
- Noise Figure:
- -
- Current - Test:
- -
- Power - Output:
- -
- Voltage - Rated:
- 30 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23 (TO-236AB)
BF545C,215 FAQ
1.How can I place an order for BF545C,215 through Aetrix?
Please submit a Request for Quotation (RFQ) for BF545C,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BF545C,215 reliable?
The price and inventory of BF545C,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BF545C,215 is usually 5 days.
3.What payment methods are accepted for BF545C,215?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BF545C,215 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BF545C,215?
BF545C,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BF545C,215 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BF545C,215?
For technical support, including BF545C,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BF545C,215 requirements.
6.How does Aetrix verify that BF545C,215 is sourced from the original manufacturer or authorized distributors?
All BF545C,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BF545C,215 meets industry standards.
7.What is the process for return or replacement of BF545C,215?
All BF545C,215 units undergo pre-shipment inspection (PSI). If there is an issue with BF545C,215, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BF545C,215 part is unused and in its original packaging.
Return procedure for BF545C,215:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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