Nexperia USA Inc. BF550,215

Overview

BF550,215 from Nexperia is a PNP medium-frequency bipolar junction transistor in SOT23 package, rated for −40 V V_CEO, −25 mA I_C, and 325 MHz f_T, used in thick/thin-film RF amplifier and oscillator stages operating up to ~100 MHz.

For engineers reviewing the BF550,215 datasheet, BF550,215 pinout, BF550,215 application, or BF550,215 equivalent, key selection criteria include its low-current PNP topology, 0.5 pF C_re, −750 mV V_BE at −1 mA, thermal resistance of 500 K/W, and compatibility with FR4 PCB mounting.

Technical Context

The BF550,215 operates as a medium-frequency PNP BJT with fixed gain structure optimized for linear amplification below 100 MHz. Its f_T of 325 MHz enables stable gain in VHF front-end stages while maintaining low noise and predictable h_FE (50 min at −1 mA/−10 V).

Designed for surface-mount integration in compact analog circuits, it uses standard SOT23 footprint with base-emitter-collector pinout and exhibits low leakage (ICBO ≤ −50 nA, IEBO ≤ −100 nA), supporting reliable biasing in battery-powered or low-power signal conditioning.

Key Specifications

Pinout & Package

SOT23 plastic surface-mounted package (TO-236AB), 3-lead, dimensions per JEDEC MS-012, footprint compatible with standard SOT23 land patterns.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP medium-frequency transistor applications.

Compared with BC856B,215 and PN2907A,115, the BF550,215 offers superior VHF gain-bandwidth trade-off and lower feedback capacitance, making it optimal for compact, surface-mounted RF amplifiers where layout area and parasitic capacitance are critical constraints.

Availability

BF550,215 is available at Aetrix Electronics and suitable for FM radio front-end amplifiers, portable audio tone control circuits, thin-film oscillator cores, and industrial sensor signal conditioning requiring stable component supply and long-term obsolescence management.

Supply support for BF550,215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, serving automotive, industrial, computing, consumer, and wearable markets with high-volume, high-reliability components.

The BF550,215 belongs to Nexperia's legacy PNP BJT portfolio designed specifically for medium-frequency analog signal processing in space-constrained, cost-sensitive applications.

FAQ

What is the maximum operating frequency for linear amplification with BF550,215?

The BF550,215 achieves usable small-signal gain up to approximately 100 MHz, supported by its 325 MHz f_T and 0.5 pF C_re. At 100 MHz, typical |h_fe| remains ≥10, enabling stable amplifier design without neutralization. Performance beyond this depends on layout parasitics and bias conditions.

Can BF550,215 be used in common-base configuration?

Yes - the BF550,215 supports common-base operation with its −40 V V_CBO rating and low C_re. In this mode, it delivers wideband voltage gain and improved high-frequency response, particularly useful in RF cascode stages where input/output isolation is required.

Is BF550,215 RoHS compliant and halogen-free?

Yes - BF550,215 meets RoHS Directive 2011/65/EU and is halogen-free per Nexperia's standard product compliance policy. The SOT23 package uses lead-free matte tin termination and complies with JEDEC J-STD-020 moisture sensitivity level 1.

How does thermal performance change above 25 °C ambient?

With R_th(j-a) = 500 K/W on FR4, the BF550,215 must be derated linearly: P_tot drops by 0.5 mW/°C above 25 °C. At 75 °C ambient, maximum allowable dissipation falls to 125 mW. No heatsink is required below 25 °C, but airflow or copper pour improves margin.