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NXP Semiconductors BF556A,215
- Part No.:
- BF556A,215
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
BF556A,215.pdf
- Description:
- RF MOSFET JFET 30V SOT23
- Quantity:
- Payment:
- Shipping:
Inventory:9,607
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Product details
Overview
BF556A,215 from NXP Semiconductors is an N-channel symmetrical silicon junction field-effect transistor (JFET) in SOT23 package, designed for low-noise, high-impedance signal conditioning. It delivers IDSS = 3–7 mA, VGSoff = −0.5 to −7.5 V, and |yfs| = 4.5 mS at VDS = 15 V, enabling precision use in electret microphone impedance converters and VHF oscillator stages.
For engineers reviewing the BF556A,215 datasheet, BF556A,215 pinout, BF556A,215 application, or BF556A,215 equivalent, key selection factors include gate leakage (typ. 500 fA), cut-off voltage spread, SOT23 thermal resistance (500 K/W), and JFET-specific small-signal parameters like Crss (0.8–0.9 pF) and Vn (40 nV/√Hz @ 100 Hz).
Technical Context
This JFET operates with zero-bias drain current (IDSS) tightly specified at 3–7 mA and exhibits a wide gate-source cut-off voltage range (−0.5 to −7.5 V), supporting flexible biasing in discrete amplifier and impedance conversion topologies. Its symmetrical structure enables bidirectional operation in certain RF configurations.
Designed for VHF applications up to 450 MHz, it maintains gfs = 1.8 mS and gis = 300 µS at that frequency, while delivering ultra-low gate leakage (IGSS ≤ −5000 pA at VGS = −20 V) and input noise voltage of 40 nV/√Hz at 100 Hz - critical for low-level analog front-ends.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| IDSS | 3–7 mA at VGS = 0 V, VDS = 15 V: sets DC operating point and gain stability in self-biased amplifiers. |
| VGSoff | −0.5 to −7.5 V at ID = 200 µA, VDS = 15 V: defines usable gate voltage swing and turn-off margin. |
| |yfs| | 4.5 mS typical at VGS = 0 V, VDS = 15 V: determines small-signal transconductance and voltage gain potential. |
| IGSS | ≤ −5000 pA at VGS = −20 V, VDS = 0 V: ensures minimal gate current loading in high-Z sensor interfaces. |
| Ciss / Crss | 3 pF / 0.9 pF at VGS = 0 V, VDS = 15 V, 1 MHz: enables stable VHF tuning and low feedback in mixer/oscillator designs. |
| Vn | 40 nV/√Hz at 100 Hz, VDS = 10 V, ID = 1 mA: supports low-noise preamplification for microphones and IR detectors. |
| Ptot | 250 mW at Tamb ≤ 25 °C: limits continuous dissipation in SOT23 without heatsinking. |
Pinout & Package
SOT23 plastic surface-mounted package (TO-236AB), 3-lead, dimensions per JEDEC outline: D = 2.8 mm, E = 1.4 mm, Lp = 0.95 mm, e = 1.9 mm, bp = 0.48 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Source (S) | Reference node for gate control; connects to ground or bias network in common-source configuration. |
| 2 | Drain (D) | Output current path; requires thermal pad (10 mm²) on FR4 PCB for rated 250 mW dissipation. |
| 3 | Gate (G) | High-impedance control terminal; ESD-sensitive (±30 V absolute max); must be guarded in layout. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low gate leakage | Typ. 500 fA enables >100 GΩ input impedance in electret mic bias networks without droop. |
| High forward transfer admittance | 4.5 mS typical ensures strong small-signal gain in single-stage VHF amplifiers and oscillators. |
| Low cut-off voltage variation | −0.5 to −7.5 V range allows precise DC bias selection across production lots for consistent gain. |
| Low input noise | 40 nV/√Hz @ 100 Hz minimizes audible hiss in audio preamps and preserves SNR in IR detector front-ends. |
| Symmetrical construction | Supports interchangeable source/drain roles in certain RF matching networks and balanced circuits. |
Applications
| Electret Microphone Interface | Infrared Detector Front-End |
|---|---|
|
Use Scenario: Biasing and buffering electret condenser microphone elements in portable audio devices. IC Role / Device Role / Timing Role: JFET acts as ultra-high-impedance impedance converter and first-stage amplifier. Use Value: 500 fA gate leakage prevents capacitor discharge, maintaining stable bias; 40 nV/√Hz noise preserves voice clarity. |
Use Scenario: Amplifying weak photocurrent signals from pyroelectric or photodiode IR sensors. IC Role / Device Role / Timing Role: Low-noise JFET provides DC-coupled transimpedance gain before AC-coupled processing. Use Value: Sub-picoampere IGSS avoids signal loss across high-value feedback resistors; symmetrical structure aids matched pair design. |
| VHF Oscillator Core | RF Mixer Active Element |
|
Use Scenario: Frequency-determining active device in Colpitts or Clapp VHF oscillators (30–300 MHz). IC Role / Device Role / Timing Role: JFET supplies negative resistance and gain to sustain oscillation at fundamental frequency. Use Value: 3 pF Ciss and 0.9 pF Crss minimize phase shift and enable stable resonance; 1.8 mS gfs at 450 MHz supports harmonic-rich operation. |
Use Scenario: Active switching element in passive-balanced or single-ended RF mixers for receiver front-ends. IC Role / Device Role / Timing Role: JFET functions as voltage-controlled resistor modulating RF signal path. Use Value: Low Crss reduces LO-to-RF feedthrough; symmetrical terminals simplify layout in doubly-balanced topologies. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel JFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 2N4416A | IDSS = 5–15 mA, VGSoff = −0.5 to −7.5 V, |yfs| = 3–7 mS, SOT23-compatible but not identical pinout (drain/source swapped). | Higher IDSS spread increases bias variability; lower |yfs| typical value reduces gain margin in low-signal VHF stages. | Acceptable where layout accommodates pin reassignment and gain tolerance ≥20% is acceptable. |
| J310 | IDSS = 24–60 mA, VGSoff = −0.5 to −3.0 V, |yfs| = 12–40 mS, TO-92 package only - no SOT23 footprint. | Higher gain and current suit higher-power RF amps but require PCB redesign; unsuitable for space-constrained mic modules. | Only viable if thermal and board area constraints permit TO-92 mounting and system can tolerate wider VGSoff distribution. |
Compared with BF556A,215, the 2N4416A offers similar cut-off voltage range but demands pinout adaptation and yields less predictable gain, while the J310 delivers higher transconductance at the cost of incompatible packaging and significantly higher IDSS - making BF556A,215 optimal for miniaturized, low-noise, SOT23-based impedance conversion.
Availability
BF556A,215 is available at Aetrix Electronics and suitable for electret microphone interfaces, infrared detector front-ends, VHF oscillator cores, and RF mixer designs requiring stable component supply, traceable sourcing, and long-term lifecycle support.
Supply support for BF556A,215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer markets.
The BF556A,215 belongs to NXP's legacy silicon JFET product line, engineered specifically for high-input-impedance, low-noise analog signal conditioning in audio, sensing, and VHF RF applications.
FAQ
What is the maximum drain-source voltage rating for BF556A,215?
The BF556A,215 has a maximum drain-source voltage (VDS) rating of ±30 V under DC conditions, as defined in the Absolute Maximum Ratings table. This rating applies regardless of gate bias and must not be exceeded to prevent permanent device damage. Operation above this limit risks junction breakdown and irreversible failure of the BF556A,215.
Does BF556A,215 have a specified gate-source breakdown voltage?
Yes, the BF556A,215 specifies a gate-source breakdown voltage V(BR)GSS of −30 V (minimum) at IG = −1 µA and VDS = 0 V. This parameter confirms the device's ability to withstand reverse gate bias without avalanche conduction, a critical specification when using the BF556A,215 in circuits with negative gate drive or transient protection requirements.
How does the BF556A,215 differ from BF556B and BF556C variants?
The BF556A,215 differs from BF556B and BF556C solely in its IDSS range (3–7 mA vs. 6–13 mA and 11–18 mA) and corresponding VGSoff distribution - all share identical pinout, package, thermal specs, and dynamic characteristics. Designers select BF556A,215 when lower quiescent current and tighter gain control are required in low-power impedance converters.
Is BF556A,215 suitable for surface-mount reflow soldering?
Yes, the BF556A,215 is qualified for standard lead-free reflow soldering per JEDEC J-STD-020. Its SOT23 package supports peak temperatures up to 260 °C for 10 seconds. Proper thermal profiling is essential to avoid exceeding the junction temperature limit of 150 °C during assembly, ensuring long-term reliability of the BF556A,215.
What is the thermal resistance from junction to ambient for BF556A,215?
The BF556A,215 has a typical thermal resistance Rth(j-a) of 500 K/W when mounted on an FR4 PCB with 4 mm lead length and a 10 mm² copper pad on the drain lead. This value directly determines allowable power dissipation at elevated ambient temperatures - for example, at Tamb = 75 °C, maximum safe Ptot drops to 150 mW for the BF556A,215.
BF556A,215 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- JFET
- Configuration:
- N-Channel
- Frequency:
- -
- Gain:
- -
- Voltage - Test:
- -
- Current Rating (Amps):
- 7mA
- Noise Figure:
- -
- Current - Test:
- -
- Power - Output:
- -
- Voltage - Rated:
- 30 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23 (TO-236AB)
BF556A,215 FAQ
1.How can I place an order for BF556A,215 through Aetrix?
Please submit a Request for Quotation (RFQ) for BF556A,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BF556A,215 reliable?
The price and inventory of BF556A,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BF556A,215 is usually 5 days.
3.What payment methods are accepted for BF556A,215?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BF556A,215 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BF556A,215?
BF556A,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BF556A,215 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BF556A,215?
For technical support, including BF556A,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BF556A,215 requirements.
6.How does Aetrix verify that BF556A,215 is sourced from the original manufacturer or authorized distributors?
All BF556A,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BF556A,215 meets industry standards.
7.What is the process for return or replacement of BF556A,215?
All BF556A,215 units undergo pre-shipment inspection (PSI). If there is an issue with BF556A,215, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BF556A,215 part is unused and in its original packaging.
Return procedure for BF556A,215:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BF556A,215 Tags
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