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NXP Semiconductors BF556B,215
- Part No.:
- BF556B,215
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
BF556B,215.pdf
- Description:
- RF MOSFET JFET 30V SOT23
- Quantity:
- Payment:
- Shipping:
Inventory:8,353
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Product details
Overview
BF556B,215 from NXP Semiconductors is an N-channel symmetrical silicon junction field-effect transistor (JFET) in SOT23 package, designed for low-noise, high-impedance signal conditioning. It delivers IDSS = 6–13 mA, VGSoff = −0.5 to −7.5 V, |yfs| = 4.5 mS, and ultra-low gate leakage (typ. 500 fA), enabling precision use in electret microphone impedance converters and VHF oscillator stages.
For engineers reviewing the BF556B,215 datasheet, BF556B,215 pinout, BF556B,215 application, or BF556B,215 equivalent, key selection criteria include verified cut-off voltage range, drain current tolerance, forward transfer admittance at VDS = 15 V, thermal resistance (Rth(j-a) = 500 K/W), and SOT23-compatible layout compatibility with FR4 PCB mounting constraints.
Technical Context
The BF556B,215 operates as a depletion-mode JFET with symmetrical source/drain terminals, supporting bidirectional signal paths in analog front-ends. Its low VGSoff spread and tight IDSS distribution enable stable DC biasing without external trimming in high-impedance node interfaces.
Dynamic performance includes Ciss = 3 pF and Crss = 0.9 pF at VGS = 0 V, f = 1 MHz, supporting VHF amplification up to 450 MHz with gfs = 1.8 mS and low input noise (Vn = 40 nV/√Hz at 100 Hz). Gate-source breakdown is rated at −30 V, ensuring robustness against transient overvoltage in sensor interface circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| IDSS | 6–13 mA at VGS = 0 V, VDS = 15 V - defines usable transconductance range and bias point stability in amplifier stages |
| VGSoff | −0.5 to −7.5 V at ID = 200 μA, VDS = 15 V - determines minimum gate drive needed to pinch off conduction |
| |yfs| | 4.5 mS typical at VGS = 0 V, VDS = 15 V - sets small-signal gain capability for low-level RF and audio preamplifiers |
| IGSS | −0.5 to −5000 pA at VGS = −20 V, VDS = 0 V - ensures minimal loading of high-impedance sources like electret capsules |
| Ptot | 250 mW at Tamb ≤ 25 °C - limits continuous power handling on standard FR4 PCBs with 10 mm² drain pad |
| Rth(j-a) | 500 K/W - requires thermal-aware layout for sustained operation above ambient temperatures |
| Ciss / Crss | 3 pF / 0.9 pF at VGS = 0 V, VDS = 15 V, f = 1 MHz - enables stable VHF tuning and mixer isolation |
Pinout & Package
SOT23 plastic surface-mounted package (TO-236AB), 3-lead, dimensions per JEDEC outline: D = 2.8 mm, E = 1.4 mm, e = 1.9 mm, bp = 0.48 mm, c = 0.38 mm, Lp = 0.95 mm, Q = 0.1 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Source (s) | Primary current return path; symmetrical with drain for bidirectional operation in impedance converters |
| 2 | Drain (d) | Main output terminal; requires ≥10 mm² copper pad on FR4 for thermal management at Ptot |
| 3 | Gate (g) | High-impedance control node; sensitive to ESD-requires handling precautions and guard ring layout |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low gate leakage | Typ. 500 fA at VGS = −20 V - preserves signal integrity in >1 GΩ sensor interfaces |
| High forward transfer admittance | 4.5 mS typical - delivers strong small-signal gain without external bias stabilization |
| Low cut-off voltage spread | VGSoff = −0.5 to −7.5 V - supports consistent turn-on behavior across production lots in oscillator cores |
| Symmetrical N-channel structure | Source/drain interchangeable - simplifies layout in differential or bidirectional analog signal paths |
| ESD-sensitive design | Class 1B per JEDEC JS-001 - mandates grounded wrist straps and ionized air handling during assembly |
Applications
| Electret Microphone Interface | Infrared Detector Front-End |
|---|---|
Use Scenario: Biasing and impedance transformation for electret condenser microphones in portable audio devices. IC Role / Device Role / Timing Role: JFET acts as ultra-high-input-impedance buffer and current source, converting capsule's high-Z output to low-Z line driver input. Use Value: 500 fA gate leakage prevents DC drift and preserves capsule polarization voltage over time. |
Use Scenario: Signal amplification of weak photocurrent pulses from pyroelectric or photodiode-based IR sensors. IC Role / Device Role / Timing Role: Low-noise JFET preamplifier stage operating in common-source configuration with passive load. Use Value: 40 nV/√Hz input noise floor ensures detection of sub-microvolt IR signals without degradation. |
| VHF Oscillator Core | Mixer Stage in RF Receivers |
Use Scenario: Active device in Colpitts or Clapp oscillator topologies for 30–300 MHz local oscillator generation. IC Role / Device Role / Timing Role: Gain element sustaining oscillation via tunable transconductance and low capacitance. Use Value: Ciss = 3 pF and Crss = 0.9 pF minimize frequency pulling and improve phase noise performance. |
Use Scenario: Passive or active mixer core in superheterodyne receivers for HF/VHF bands. IC Role / Device Role / Timing Role: Switching or amplifying element translating RF to IF with minimal intermodulation distortion. Use Value: Symmetrical source/drain allows balanced switching topology, reducing even-order harmonics. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar JFET amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BF556A,215 | IDSS = 3–7 mA, higher VGSoff min (−0.5 V), lower gain (same |yfs| spec but lower typical IDSS reduces gm) | Better suited for ultra-low-current biasing where lower transconductance improves stability | Select when lower power consumption and reduced gain margin are acceptable trade-offs |
| BF556C,215 | IDSS = 11–18 mA, wider VGSoff range (−0.5 to −7.5 V), same |yfs| but higher gm potential due to higher IDSS | Preferred for higher-gain VHF amplifiers requiring stronger drive capability | Choose when circuit demands higher small-signal gain and can accommodate tighter thermal management |
Compared with BF556A,215 and BF556C,215, the BF556B,215 offers the optimal balance of transconductance, bias current, and thermal dissipation for general-purpose high-impedance analog signal conditioning-making it the default choice for electret mic interfaces and mid-gain VHF oscillators without redesigning bias networks.
Availability
BF556B,215 is available at Aetrix Electronics and suitable for electret microphone interfaces, infrared detector front-ends, VHF oscillator designs, and RF mixer stages requiring stable component supply and traceable sourcing.
Supply support for BF556B,215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer applications.
The BF556B,215 belongs to NXP's legacy silicon JFET product line, engineered specifically for low-noise, high-impedance analog signal conditioning in audio, sensing, and RF front-end circuits.
FAQ
What is the maximum drain-source voltage rating for BF556B,215?
The BF556B,215 has a maximum drain-source voltage (VDS) rating of ±30 V under DC conditions, as specified in the Absolute Maximum Ratings table. This rating applies with proper PCB thermal design-exceeding this voltage risks permanent junction damage, and operation near the limit requires verification of transient overshoot in the target circuit.
Does BF556B,215 support symmetrical source/drain operation in circuit design?
Yes, the BF556B,215 is a symmetrical N-channel JFET, meaning its source and drain terminals are functionally interchangeable. This allows flexible layout in impedance converters and balanced oscillator configurations-no internal structural asymmetry limits bidirectional current flow under normal bias conditions.
What is the typical gate-source leakage current of BF556B,215 at −20 V?
The typical gate-source leakage current (IGSS) of BF556B,215 is −0.5 pA at VGS = −20 V and VDS = 0 V, with a maximum of −5000 pA. This ultra-low leakage is critical for preserving bias stability in high-impedance sensor interfaces and minimizing drift in long-duration measurement circuits.
How does BF556B,215 differ from BF556A,215 and BF556C,215 in terms of IDSS?
The BF556B,215 specifies IDSS = 6–13 mA, positioned between BF556A,215 (3–7 mA) and BF556C,215 (11–18 mA). This intermediate IDSS provides higher transconductance than BF556A,215 while maintaining better thermal headroom than BF556C,215-making BF556B,215 ideal for general-purpose amplifier stages without re-optimizing bias resistors.
Is BF556B,215 suitable for VHF amplifier applications up to 450 MHz?
Yes, BF556B,215 supports VHF amplification up to 450 MHz, with measured gfs = 1.8 mS and gis = 300 μS at that frequency. Its low Crss (0.9 pF) and symmetrical structure reduce Miller effect and enable stable gain in tuned amplifier and mixer topologies when used with appropriate matching networks.
BF556B,215 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- JFET
- Configuration:
- N-Channel
- Frequency:
- -
- Gain:
- -
- Voltage - Test:
- -
- Current Rating (Amps):
- 13mA
- Noise Figure:
- -
- Current - Test:
- -
- Power - Output:
- -
- Voltage - Rated:
- 30 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23 (TO-236AB)
BF556B,215 FAQ
1.How can I place an order for BF556B,215 through Aetrix?
Please submit a Request for Quotation (RFQ) for BF556B,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BF556B,215 reliable?
The price and inventory of BF556B,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BF556B,215 is usually 5 days.
3.What payment methods are accepted for BF556B,215?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BF556B,215 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BF556B,215?
BF556B,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BF556B,215 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BF556B,215?
For technical support, including BF556B,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BF556B,215 requirements.
6.How does Aetrix verify that BF556B,215 is sourced from the original manufacturer or authorized distributors?
All BF556B,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BF556B,215 meets industry standards.
7.What is the process for return or replacement of BF556B,215?
All BF556B,215 units undergo pre-shipment inspection (PSI). If there is an issue with BF556B,215, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BF556B,215 part is unused and in its original packaging.
Return procedure for BF556B,215:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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