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NXP Semiconductors BF556C,215
- Part No.:
- BF556C,215
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
BF556C,215.pdf
- Description:
- RF MOSFET JFET 30V SOT23
- Quantity:
- Payment:
- Shipping:
Inventory:4,712
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Product details
Overview
BF556C,215 from NXP Semiconductors is an N-channel symmetrical silicon junction field-effect transistor (JFET) in SOT23 package, designed for low-noise, high-impedance signal conditioning. It delivers IDSS = 11–18 mA, VGSoff = −0.5 to −7.5 V, and |yfs| = 4.5 mS at VDS = 15 V, enabling precise biasing in electret microphone preamplifiers and VHF oscillator stages.
For engineers reviewing the BF556C,215 datasheet, BF556C,215 pinout, BF556C,215 application, or BF556C,215 equivalent, key selection criteria include gate leakage (IGSS ≤ −5000 pA), cut-off voltage spread, SOT23 thermal resistance (Rth(j-a) = 500 K/W), and dynamic capacitance (Ciss = 3 pF at VGS = 0 V).
Technical Context
This JFET operates as a voltage-controlled current source with symmetrical source/drain terminals, supporting bidirectional signal paths in analog front-ends. Its low gate leakage (typ. −500 pA) and high forward transfer admittance ensure stable DC bias and minimal signal distortion in high-impedance nodes.
The device exhibits strong transconductance retention up to 450 MHz (gfs = 1.8 mS), with Crss = 0.9 pF and Ciss = 3 pF at VGS = 0 V, making it suitable for VHF amplification and mixer applications where input capacitance and reverse transfer effects must be minimized.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| IDSS | 11–18 mA at VGS = 0 V, VDS = 15 V - sets quiescent current range for amplifier biasing |
| VGSoff | −0.5 to −7.5 V at ID = 200 µA, VDS = 15 V - defines gate voltage required to pinch off conduction |
| |yfs| | 4.5 mS minimum at VGS = 0 V, VDS = 15 V - determines small-signal gain capability |
| IGSS | ≤ −5000 pA at VGS = −20 V, VDS = 0 V - ensures ultra-low gate leakage for high-Z sensor interfaces |
| Ciss | 3 pF at VGS = 0 V, VDS = 15 V, f = 1 MHz - limits high-frequency input loading in RF stages |
| Ptot | 250 mW at Tamb ≤ 25 °C - constrains power handling on FR4 PCBs without heatsinking |
| Rth(j-a) | 500 K/W - indicates thermal performance on standard SOT23 mounting (10 mm² drain pad) |
Pinout & Package
SOT23 plastic surface-mounted package (TO-236AB), 3-lead, dimensions per JEDEC outline: D = 2.8 mm, E = 1.4 mm, e = 1.9 mm, bp = 0.48 mm, c = 0.38 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Source (S) | Reference terminal for gate-source voltage; symmetrical with drain for bidirectional operation |
| 2 | Drain (D) | Current output node; requires 10 mm² copper pad for rated 250 mW dissipation |
| 3 | Gate (G) | High-impedance control terminal; ESD-sensitive-requires handling precautions per IEC 61340 |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low gate leakage | IGSS ≤ −5000 pA enables >100 MΩ input impedance in electret mic bias networks |
| High transconductance | |yfs| ≥ 4.5 mS supports >20 dB small-signal gain in single-stage VHF amplifiers |
| Low cut-off voltage spread | VGSoff range (−0.5 to −7.5 V) allows predictable bias point selection across production lots |
| Symmetrical construction | Source/drain interchangeability simplifies layout in feedback and cascode configurations |
| ESD-protected design | Qualified per IEC 61340-3-1 - but requires handling controls due to ±30 V absolute max ratings |
Applications
| Electret Microphone Biasing | Infrared Detector Interface |
|---|---|
|
Use Scenario: Provides constant-current bias to electret condenser microphones in portable audio devices. IC Role / Device Role / Timing Role: JFET acts as high-impedance current source in source-follower configuration. Use Value: Ultra-low IGSS (≤ −5000 pA) prevents bias drift and preserves SNR over temperature and time. |
Use Scenario: Amplifies weak photocurrent signals from pyroelectric or photodiode IR sensors. IC Role / Device Role / Timing Role: Functions as low-noise, high-Z preamplifier stage before op-amp conditioning. Use Value: Vn = 40 nV/√Hz at 100 Hz enables detection of sub-mV IR pulses without added noise floor. |
| VHF Oscillator Core | Mixer Active Element |
|
Use Scenario: Forms the active device in Colpitts or Clapp oscillators operating at 30–200 MHz. IC Role / Device Role / Timing Role: JFET provides gain and frequency-determining nonlinearity in resonant tank circuits. Use Value: Crss = 0.9 pF minimizes frequency pulling and improves phase noise stability in LC tanks. |
Use Scenario: Serves as switching/mixing element in passive or active RF mixers for receiver front-ends. IC Role / Device Role / Timing Role: Operates in square-law region to generate sum/difference frequencies from LO and RF inputs. Use Value: Symmetrical S/D terminals allow balanced LO injection and reduce even-order distortion products. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel JFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| J310 | IDSS = 24–60 mA, VGSoff = −0.5 to −3.5 V, higher gain but wider VGSoff tolerance | Better suited for wide-range biasing; less predictable cutoff in precision low-current designs | Select J310 when higher IDSS and broader gain range are needed; verify gate leakage (typ. −1 nA) for high-Z use |
| 2N4416A | IDSS = 5–15 mA, VGSoff = −1.5 to −5.0 V, TO-92 package, Rth(j-a) ≈ 200 K/W | Lower thermal resistance but larger footprint; not SOT23-compatible for space-constrained layouts | Choose 2N4416A for higher-power or through-hole prototyping; avoid if board area or reflow compatibility is critical |
Compared with BF556C,215, J310 offers higher IDSS and gain but looser VGSoff control, while 2N4416A trades SOT23 compactness for better thermal performance and legacy through-hole fit-neither is pin-compatible, requiring layout revision.
Availability
BF556C,215 is available at Aetrix Electronics and suitable for electret microphone biasing, infrared detector interfacing, and VHF oscillator design requiring stable component supply, consistent parametric binning, and long-term industrial availability.
Supply support for BF556C,215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer markets.
The BF556C,215 belongs to NXP's legacy silicon JFET product line, engineered for high-input-impedance analog signal conditioning in audio, sensing, and RF front-end applications where low noise and leakage are critical.
FAQ
What is the maximum drain-source voltage rating for BF556C,215?
The BF556C,215 has a maximum drain-source voltage (VDS) rating of ±30 V under DC conditions, as specified in the Absolute Maximum Ratings table. This rating applies regardless of gate bias and must not be exceeded to prevent permanent device damage. Operation above this limit risks junction breakdown and irreversible failure of the BF556C,215.
Does BF556C,215 support bidirectional current flow between source and drain?
Yes, the BF556C,215 is a symmetrical N-channel JFET with interchangeable source and drain terminals, confirmed by its "symmetrical silicon junction field-effect transistor" designation and identical limiting values for VDS and VGDO. This symmetry allows flexible use in source-follower, common-gate, or cascode configurations without polarity constraints in the BF556C,215.
What is the typical gate-source leakage current of BF556C,215 at −20 V?
The BF556C,215 exhibits a typical gate-source leakage current (IGSS) of −500 pA at VGS = −20 V and VDS = 0 V, with a maximum of −5000 pA. This ultra-low leakage enables stable DC biasing in high-impedance sensor interfaces and ensures minimal error in precision current-source applications using the BF556C,215.
How does the BF556C,215 differ from BF556A and BF556B in terms of IDSS?
The BF556C,215 is binned for higher IDSS (11–18 mA) compared to BF556A (3–7 mA) and BF556B (6–13 mA), all measured at VGS = 0 V and VDS = 15 V. This higher saturation current makes the BF556C,215 optimal for applications requiring greater transconductance and output drive, such as VHF amplifiers where gain margin is critical.
Is BF556C,215 suitable for surface-mount reflow assembly?
Yes, the BF556C,215 uses the standard SOT23 (TO-236AB) package and is qualified for lead-free reflow soldering per JEDEC J-STD-020. Its thermal characteristics assume mounting on FR4 with a 10 mm² drain pad, and the device must be handled per ESD precautions during placement-confirm profile compatibility with your BF556C,215 assembly process.
BF556C,215 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- JFET
- Configuration:
- N-Channel
- Frequency:
- -
- Gain:
- -
- Voltage - Test:
- -
- Current Rating (Amps):
- 18mA
- Noise Figure:
- -
- Current - Test:
- -
- Power - Output:
- -
- Voltage - Rated:
- 30 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23 (TO-236AB)
BF556C,215 FAQ
1.How can I place an order for BF556C,215 through Aetrix?
Please submit a Request for Quotation (RFQ) for BF556C,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BF556C,215 reliable?
The price and inventory of BF556C,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BF556C,215 is usually 5 days.
3.What payment methods are accepted for BF556C,215?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BF556C,215 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BF556C,215?
BF556C,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BF556C,215 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BF556C,215?
For technical support, including BF556C,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BF556C,215 requirements.
6.How does Aetrix verify that BF556C,215 is sourced from the original manufacturer or authorized distributors?
All BF556C,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BF556C,215 meets industry standards.
7.What is the process for return or replacement of BF556C,215?
All BF556C,215 units undergo pre-shipment inspection (PSI). If there is an issue with BF556C,215, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BF556C,215 part is unused and in its original packaging.
Return procedure for BF556C,215:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BF556C,215 Tags
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