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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi BF720T3G

Name: BF720T3G
Brand: onsemi
SKU: BF720T3G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BF720T3G

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-261-4, TO-261AA

Datasheet:: BF720T3G.pdf

Description:: TRANS NPN 300V 0.1A SOT223

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BF720T3G from onsemi is an AEC−Q101-qualified NPN silicon transistor in SOT−223 package, rated for V_CEO = 300 V, I_C = 100 mA, P_D = 1.5 W, and f_T = 60 MHz. It serves as a high-voltage switching element in automotive ignition drivers and industrial relay interface circuits.

For engineers reviewing the BF720T3G datasheet, pinout, applications, or equivalent options, key selection factors include its 300 V breakdown rating, 1.5 W power dissipation at T_A = 25°C, AEC−Q101 qualification, SOT−223 thermal performance (R_JA = 83.3°C/W), and verified V_CE(sat) ≤ 0.6 V at I_C/I_B = 6.

Technical Context

This device operates as a general-purpose NPN bipolar junction transistor optimized for high-voltage linear and switching applications up to 300 V. Its V_(BR)CEO, V_(BR)CBO, and V_(BR)CER are all rated at 300 Vdc, with V_(BR)EBO = 5.0 Vdc and I_CBO ≤ 10 nAdc - confirming robust off-state isolation.

Dynamic behavior is characterized by f_T = 60 MHz at I_C = 10 mA, V_CE = 10 V, and Cre ≤ 1.6 pF at V_CE = 30 V, supporting stable RF-adjacent signal switching without parasitic oscillation in properly decoupled layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	300 Vdc - supports direct switching of 24 V–48 V industrial bus loads with ≥6× safety margin
I_C	100 mAdc - sufficient for driving small relays, solenoids, or optocoupler LEDs
P_D	1.5 W - enables continuous operation at ~100 mA with <1.5 V saturation drop on SOT−223 PCB pad
f_T	60 MHz - allows use in low-frequency switching converters and pulse-width modulated control stages
V_CE(sat)	≤ 0.6 V at I_C = 30 mA, I_B = 5 mA - minimizes conduction loss in saturated-switch mode
R_JA	83.3°C/W - requires ≥0.93 in² copper pour for full 1.5 W dissipation at ambient ≤ 75°C
h_FE	Min 50 at I_C = 25 mA, V_CE = 20 V - ensures reliable base drive design with standard resistor biasing

Pinout & Package

SOT−223 (TO−261) package with exposed collector tab for thermal conduction; standardized 4-pin configuration where pins 1 and 4 are internally connected to collector, pin 2 is base, and pin 3 is emitter.

Pin/Terminal	Circuit Role	Design Meaning
1, 4	Collector	Internally joined; electrically and thermally tied to large copper pad - primary heat path and high-side switch node
2	Base	Current-controlled input; requires series resistor to limit I_B per h_FE and V_BE(sat) specs
3	Emitter	Reference terminal for bias network; connects to ground or load return in common-emitter topology

Key Features

Feature	Design Value
AEC−Q101 qualified	Validated for automotive underhood temperature cycling, humidity, and mechanical shock per stress test plan
300 V V_CEO/V_CBO/V_CER	Enables single-transistor replacement of stacked BJT solutions in 24/48 V DC systems
V_CE(sat) ≤ 0.6 V @ I_C/I_B = 6	Reduces power loss to <18 mW at 30 mA, easing thermal design in sealed enclosures
RoHS, Pb−Free, Halogen Free/BFR Free	Complies with EU Directive 2011/65/EU and IPC-1752A Tier 1 material declaration requirements
f_T = 60 MHz	Supports clean edge transitions in PWM-driven inductive loads up to ~500 kHz switching frequency

Applications

Automotive Ignition Driver	Industrial Relay Interface
Use Scenario: Driving low-side coil of 12 V/24 V automotive ignition coils in distributorless ignition systems (DIS). IC Role / Device Role / Timing Role: High-voltage NPN switch controlling primary current flow; triggered by microcontroller PWM with flyback protection. Use Value: 300 V V_CEO withstands >200 V inductive kickback; R_JA = 83.3°C/W enables operation without heatsink at 10 Hz–200 Hz burst duty.	Use Scenario: Isolating PLC output modules from 24 VDC field relays with mechanical contact ratings up to 5 A. IC Role / Device Role / Timing Role: Low-side switch interfacing logic-level signals to relay coil; used with external freewheeling diode. Use Value: V_CE(sat) ≤ 0.6 V limits coil power loss to <18 mW at 30 mA, reducing self-heating in dense I/O modules.
High-Voltage Sensor Bias	Power Supply Startup Circuit
Use Scenario: Providing stable 100 μA–1 mA bias current to avalanche photodiodes or Zener reference chains in HV measurement front-ends. IC Role / Device Role / Timing Role: Constant-current source configured in emitter-follower with precision base voltage divider. Use Value: I_CBO ≤ 10 nA and V_(BR)CEO = 300 V ensure leakage-limited accuracy and safe operation at 200 V bias rails.	Use Scenario: Enabling soft-start sequencing in offline SMPS by delaying auxiliary supply activation until bulk capacitor reaches threshold voltage. IC Role / Device Role / Timing Role: Voltage-triggered switch enabling gate drive to main controller IC after RC delay threshold is crossed. Use Value: h_FE ≥ 50 ensures predictable turn-on with minimal base current; 150°C T_J rating supports operation near transformer hotspots.

Automotive Ignition Driver

Industrial Relay Interface

Use Scenario: Driving low-side coil of 12 V/24 V automotive ignition coils in distributorless ignition systems (DIS).

IC Role / Device Role / Timing Role: High-voltage NPN switch controlling primary current flow; triggered by microcontroller PWM with flyback protection.

Use Value: 300 V V_CEO withstands >200 V inductive kickback; R_JA = 83.3°C/W enables operation without heatsink at 10 Hz–200 Hz burst duty.

Use Scenario: Isolating PLC output modules from 24 VDC field relays with mechanical contact ratings up to 5 A.

IC Role / Device Role / Timing Role: Low-side switch interfacing logic-level signals to relay coil; used with external freewheeling diode.

Use Value: V_CE(sat) ≤ 0.6 V limits coil power loss to <18 mW at 30 mA, reducing self-heating in dense I/O modules.

High-Voltage Sensor Bias

Power Supply Startup Circuit

Use Scenario: Providing stable 100 μA–1 mA bias current to avalanche photodiodes or Zener reference chains in HV measurement front-ends.

IC Role / Device Role / Timing Role: Constant-current source configured in emitter-follower with precision base voltage divider.

Use Value: I_CBO ≤ 10 nA and V_(BR)CEO = 300 V ensure leakage-limited accuracy and safe operation at 200 V bias rails.

Use Scenario: Enabling soft-start sequencing in offline SMPS by delaying auxiliary supply activation until bulk capacitor reaches threshold voltage.

IC Role / Device Role / Timing Role: Voltage-triggered switch enabling gate drive to main controller IC after RC delay threshold is crossed.

Use Value: h_FE ≥ 50 ensures predictable turn-on with minimal base current; 150°C T_J rating supports operation near transformer hotspots.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN high-voltage switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MJD127G	V_CEO = 100 V, I_C = 2 A, P_D = 20 W, TO−252 package	Higher current/lower voltage; unsuitable for 300 V flyback but better for high-power relay banks	Select when load current exceeds 100 mA and voltage stays below 80 V
ZTX653STZ	V_CEO = 300 V, I_C = 1 A, P_D = 2 W, SOT−223, h_FE min 100	Same package and voltage rating but higher current capability and gain; not AEC−Q101 qualified	Select for non-automotive 300 V switching where higher I_C headroom or tighter h_FE tolerance is needed

Compared with MJD127G and ZTX653STZ, the BF720T3G uniquely balances AEC−Q101 compliance, 300 V rating, and SOT−223 thermal footprint - making it optimal for space-constrained automotive and industrial control nodes where reliability and voltage margin are prioritized over raw current capacity.

Availability

BF720T3G is available at Aetrix Electronics and suitable for automotive ignition drivers, industrial relay interfaces, high-voltage sensor bias networks, and power supply startup circuits requiring stable component supply across extended temperature and lifecycle conditions.

Supply support for BF720T3G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.

The BF720T3G belongs to onsemi's high-voltage bipolar transistor product line, designed specifically for robust, AEC−Q101-compliant switching in harsh-environment control systems where voltage margin and long-term parametric stability are critical.

FAQ

What is the maximum collector-emitter voltage rating for BF720T3G?

The BF720T3G has a guaranteed minimum V_(BR)CEO of 300 Vdc at I_C = 1.0 mAdc and I_B = 0. This rating is confirmed across temperature and applies to both DC and repetitive pulsed operation within safe operating area limits. The BF720T3G maintains this rating under all specified test conditions in the official onsemi datasheet Rev. 9.

Is BF720T3G suitable for automotive applications?

Yes, the BF720T3G is AEC−Q101 qualified and PPAP capable, meeting stress test requirements for temperature cycling, humidity, mechanical shock, and high-temperature reverse bias. It is explicitly intended for automotive underhood and chassis applications, including ignition coil drivers and body control module outputs. The BF720T3G carries full automotive qualification documentation from onsemi.

What is the thermal resistance of BF720T3G in typical PCB mounting?

The BF720T3G has a maximum R_JA of 83.3°C/W when mounted on a 1.575 in × 1.575 in glass-epoxy PCB with a minimum 0.93 in² copper pad for the collector lead. This value assumes natural convection only; forced airflow or additional thermal vias can improve performance. The BF720T3G's thermal behavior is validated per JEDEC JESD51-2 and JESD51-7 standards.

Does BF720T3G have a built-in base-emitter resistor?

No, the BF720T3G is a standard discrete NPN bipolar transistor with no integrated resistors. It requires external base biasing components - typically a series resistor between driver and base (pin 2), and optionally a base-emitter pull-down resistor for improved turn-off speed and noise immunity. The BF720T3G pinout and electrical characteristics assume discrete bias network implementation.

What is the current gain (h_FE) specification for BF720T3G?

The BF720T3G guarantees a minimum DC current gain (h_FE) of 50 at I_C = 25 mAdc and V_CE = 20 Vdc, measured at T_A = 25°C. Gain varies with temperature and operating point - e.g., h_FE drops to ~35 at T_J = 125°C and rises to ~70 at T_J = −55°C. The BF720T3G datasheet provides full h_FE vs. I_C curves across temperature.

BF720T3G Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 100 mA

Voltage - Collector Emitter Breakdown (Max):: 300 V

Vce Saturation (Max) @ Ib, Ic:: 600mV @ 5mA, 30mA

Current - Collector Cutoff (Max):: 10nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 50 @ 25mA, 20V

Power - Max:: 1.5 W

Frequency - Transition:: 60MHz

Operating Temperature:: -65°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-223 (TO-261)

BF720T3G FAQ

1.How can I place an order for BF720T3G through Aetrix?

Please submit a Request for Quotation (RFQ) for BF720T3G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BF720T3G reliable?

The price and inventory of BF720T3G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BF720T3G is usually 5 days.

3.What payment methods are accepted for BF720T3G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BF720T3G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BF720T3G?

BF720T3G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BF720T3G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BF720T3G?

For technical support, including BF720T3G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BF720T3G requirements.

6.How does Aetrix verify that BF720T3G is sourced from the original manufacturer or authorized distributors?

All BF720T3G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BF720T3G meets industry standards.

7.What is the process for return or replacement of BF720T3G?

All BF720T3G units undergo pre-shipment inspection (PSI). If there is an issue with BF720T3G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BF720T3G part is unused and in its original packaging.

Return procedure for BF720T3G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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