Nexperia USA Inc. BF823-QR

Overview

BF823-QR from Nexperia is a PNP high-voltage bipolar junction transistor in SOT23 package, rated for V_CEO = −250 V and I_C = −50 mA, with h_FE ≥ 50 at −25 mA/−20 V, qualified to AEC-Q101 for automotive telephony and professional communication equipment.

For engineers reviewing the BF823-QR datasheet, BF823-QR pinout, BF823-QR application, or BF823-QR equivalent, this page delivers verified electrical limits, thermal resistance (R_th(j-a) = 500 K/W), saturation voltage (V_CE(sat) ≤ −800 mV), transition frequency (f_T = 60 MHz), and automotive qualification status - all critical for high-voltage switching design.

Technical Context

This PNP transistor operates in linear or switching mode with open-base collector-emitter breakdown of −250 V and emitter-base breakdown of −5 V. Its low leakage (I_CBO ≤ −10 nA at 25 °C) and stable DC gain support precision biasing in high-impedance signal paths.

The device uses silicon planar epitaxial technology, achieves f_T = 60 MHz under −10 V/−10 mA conditions, and maintains operation across −65 °C to +150 °C ambient range with junction temperature limited to 150 °C.

Key Specifications

Pinout & Package

SOT23 plastic surface-mounted package: 3-terminal, 1.9 mm pitch, 2.9 mm × 1.3 mm × 1.0 mm body, with collector pad optimized for thermal dissipation on single-sided 1 cm² tin-plated copper.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP high-voltage transistor applications.

Compared with BF823-QR, BF820-Q offers complementary NPN functionality in identical packaging and qualification, while ZTX951 trades automotive compliance and miniaturization for higher voltage headroom and looser gain tolerance - making BF823-QR optimal for space-constrained, safety-critical HV switching.

Availability

BF823-QR is available at Aetrix Electronics and suitable for telecom line interface, automotive door module, industrial sensor biasing, and professional audio level shifting requiring stable component supply and AEC-Q101 assurance.

Supply support for BF823-QR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, headquartered in Nijmegen, Netherlands, with manufacturing in Europe and Asia.

The BF823-QR belongs to Nexperia's AEC-Q101-qualified high-voltage bipolar transistor family, designed specifically for robust signal conditioning and power control in automotive and industrial infrastructure where voltage resilience and long-term stability are critical.

FAQ

Is BF823-QR pin-compatible with BF820-Q?

No. BF823-QR is a PNP transistor with pinout Base–Emitter–Collector (1–2–3), while BF820-Q is its NPN complement with identical SOT23 mechanical outline but reversed polarity and different internal doping. Swapping them without circuit redesign will cause functional failure due to inverted current flow and bias requirements.

What is the maximum allowable PCB copper area for thermal performance at 250 mW?

The datasheet specifies R_th(j-a) = 500 K/W when mounted on a single-sided, tin-plated 1 cm² copper pad. To maintain T_j ≤ 150 °C at 25 °C ambient and 250 mW dissipation, no additional copper is required beyond this baseline. Larger pads reduce thermal resistance further but are not necessary for nominal operation.

Does BF823-QR support pulsed operation above 50 mA?

Yes - the peak collector current I_CM is rated at −100 mA for short pulses (duty cycle ≤ 1%, pulse width ≤ 10 ms). This allows brief surge handling in relay coil driving or transient event detection, provided average power remains within 250 mW and junction temperature stays below 150 °C.

Can BF823-QR be used in linear amplifier configurations?

Yes - with h_FE ≥ 50 and f_T = 60 MHz, it supports Class-A audio preamplifier and sensor signal conditioning up to ~10 MHz. However, V_CE(sat) and thermal resistance require careful bias point selection to avoid thermal runaway; recommended for low-gain, low-power linear stages only.