Nexperia USA Inc. BF824,215

Overview

BF824,215 from Nexperia is a PNP medium-frequency transistor in SOT23 package, rated for −30 V V_CEO, −25 mA I_C, and 450 MHz f_T at I_C = −4 mA. It operates in common-base RF stages of FM front-ends, delivering low-noise amplification with 50 nA I_CBO and 0.3 pF C_re.

For engineers reviewing the BF824,215 datasheet, BF824,215 pinout, BF824,215 application, or BF824,215 equivalent, key selection criteria include its PNP polarity, SOT23 thermal resistance (500 K/W), −900 mV V_BE at −4 mA, and suitability for low-current, medium-frequency RF signal conditioning.

Technical Context

This device is a silicon PNP bipolar junction transistor optimized for medium-frequency RF amplification in common-base configuration. Its design emphasizes low feedback capacitance (C_re ≤ 0.3 pF) and high transition frequency (f_T ≥ 400 MHz at I_C = −4 mA), enabling stable gain up to ~300 MHz.

It features tight DC current gain control (h_FE = 25–50 at I_C = −4 mA, V_CE = −10 V) and ultra-low leakage (I_CBO ≤ −50 nA, I_EBO ≤ −100 nA), supporting precision biasing in low-power FM receiver front-ends.

Key Specifications

Pinout & Package

SOT23 plastic surface-mounted package (TO-236AB), 3-lead, dimensions per JEDEC MO-203AA: 2.9 × 1.3 × 1.0 mm (L × W × H), with 0.95 mm lead pitch.

Key Features

Applications

Availability

BF824,215 is available at Aetrix Electronics and suitable for FM radio front-ends, portable audio tuners, low-power IF buffers, and RF signal conditioning nodes requiring stable component supply and consistent medium-frequency performance.

Supply support for BF824,215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in high-volume discrete, logic, and PowerMOS semiconductors, serving automotive, industrial, computing, consumer, and wearable markets with robust, scalable components.

The BF824,215 belongs to Nexperia's RF bipolar transistor product line, engineered specifically for low-noise, medium-frequency amplification in compact, cost-sensitive FM and IF signal chains.

FAQ

Is BF824,215 suitable for common-emitter amplifier configurations?

No - BF824,215 is characterized and optimized for common-base RF operation, as stated in its official applications. Its low C_re and high f_T deliver best stability and bandwidth in that topology. Common-emitter use would increase Miller capacitance and degrade high-frequency response beyond datasheet guarantees.

What is the maximum allowable PCB trace length for BF824,215 in 100 MHz applications?

For reliable 100 MHz operation, keep emitter and collector RF traces under 8 mm on FR4 with 50 Ω impedance control. The device's 0.3 pF C_re and SOT23 parasitic inductance require minimized layout loop area; ground vias adjacent to emitter pad are recommended to reduce inductive reactance.

Does BF824,215 have qualified automotive-grade variants?

No - BF824,215 is specified for commercial/industrial temperature range (−65 °C to +150 °C) but is not AEC-Q101 qualified. Nexperia offers automotive-qualified PNP RF transistors (e.g., PBSS4041T) with identical SOT23 footprint but extended reliability testing and traceability.

Can BF824,215 replace BF199 in existing designs?

Not directly - BF199 is an NPN transistor with different bias polarity, gain profile, and f_T behavior. Swapping requires circuit re-biasing, polarity reversal, and verification of noise figure and stability margins; no documented drop-in validation exists between these parts.