Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Nexperia USA Inc. BF824,235

Part No.:
BF824,235
Manufacturer:
Nexperia USA Inc.
Category:
Single Bipolar Transistors
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixBF824,235.pdf
Description:
TRANS PNP 30V 0.025A TO-236AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:27,666

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

BF824,235 from Nexperia is a PNP medium-frequency transistor in SOT23 package, rated for −30 V VCEO, −25 mA IC, and 250 mW Ptot, optimized for RF amplification in FM front-end common-base configurations.

For engineers reviewing the BF824,235 datasheet, BF824,235 pinout, BF824,235 application, or BF824,235 equivalent, key selection factors include its fT of 400–450 MHz at −4 mA, low Cre of 0.3 pF, and −900 mV VBE at operating bias - critical for high-linearity, low-noise RF gain stages.

Technical Context

The BF824,235 operates as a PNP bipolar junction transistor with fixed-emitter common-base topology, supporting RF signal amplification up to 450 MHz transition frequency. Its low base-emitter voltage (−900 mV) and minimal feedback capacitance (0.3 pF) reduce Miller effect and improve stability in tuned amplifier designs.

Designed for DC-coupled or AC-coupled RF stages, it delivers hFE = 25–50 across −1 to −8 mA collector current, with tight thermal resistance (Rth(j-a) = 500 K/W on FR4) enabling reliable operation in compact FM receiver modules.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO−30 V: Maximum safe collector-emitter voltage in open-base configuration, defining breakdown margin in FM front-end bias networks.
IC (DC)−25 mA: Absolute maximum continuous collector current, limiting usable dynamic range in small-signal RF amplifiers.
fT400–450 MHz at −4 mA: Transition frequency confirming suitability for VHF/UHF FM band amplification (87.5–108 MHz) with headroom.
Cre0.3 pF at −10 V VCE: Low feedback capacitance minimizing instability and improving input/output isolation in common-base RF stages.
VBE−900 mV at −4 mA IC: Confirmed forward-bias voltage enabling precise bias network design for stable quiescent point in low-power RF circuits.
Ptot250 mW at Tamb ≤ 25 °C: Total power dissipation limit dictating heatsinking requirements and ambient derating in sealed consumer modules.

Pinout & Package

SOT23 plastic surface-mounted package (TO-236AB), 3-lead, dimensions per JEDEC MO-215AA: 2.9 × 1.3 × 1.0 mm, with 0.95 mm lead pitch and 0.1 mm minimum standoff.

Pin/TerminalCircuit RoleDesign Meaning
1BaseControl electrode for current amplification; requires stable negative bias relative to emitter in common-base configuration.
2EmitterCurrent source terminal; connected to RF ground or bias supply in common-base topology to establish input reference.
3CollectorOutput current terminal; drives tuned LC tank or next-stage input with minimal phase shift due to low Cre.

Key Features

FeatureDesign Value
Medium-frequency optimizationfT ≥ 400 MHz ensures stable gain across full FM broadcast band without peaking or roll-off.
Low feedback capacitanceCre = 0.3 pF reduces internal coupling, eliminating need for neutralization in single-transistor RF amplifiers.
High hFE consistencyhFE = 25–50 over −1 to −8 mA enables predictable gain setting without trimming resistors.
Low-voltage PNP architecture−30 V rating supports dual-supply or single-negative rail designs in portable FM receivers with minimal headroom overhead.

Applications

FM Radio Front-End AmplifierPortable Audio Receiver IF Stage

Use Scenario: First active stage after antenna tuning circuit in battery-powered FM radio modules.

IC Role / Device Role / Timing Role: PNP common-base RF amplifier providing broadband gain with low noise figure and high reverse isolation.

Use Value: Enables >20 dB small-signal gain at 100 MHz with <1 dB gain variation across temperature, reducing need for AGC complexity.

Use Scenario: Intermediate frequency amplifier in compact DAB/FM hybrid receivers using 10.7 MHz IF.

IC Role / Device Role / Timing Role: Fixed-gain, DC-coupled PNP transistor amplifying IF signal before limiting/detection.

Use Value: Delivers flat frequency response ±0.5 dB from 8–12 MHz with <0.3 pF Cre preventing self-oscillation in narrowband filters.

Wireless Microphone Transmitter BufferLow-Power Sensor Signal Conditioning

Use Scenario: Final RF buffer stage in sub-100 mW UHF wireless microphone transmitters (174–216 MHz).

IC Role / Device Role / Timing Role: Class-A linear driver isolating oscillator from antenna load variations.

Use Value: Maintains oscillator stability via >30 dB reverse isolation (enabled by low Cre) while delivering 12 dBm output with <5% THD.

Use Scenario: Low-noise preamplifier for piezoelectric vibration sensors in industrial predictive maintenance nodes.

IC Role / Device Role / Timing Role: High-input-impedance PNP emitter-follower buffering weak AC-coupled sensor signals.

Use Value: Provides unity-gain, low-output-impedance drive to ADC inputs with <10 nA ICB0 ensuring DC offset drift <1 µV/°C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP medium-frequency transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
BC856B,215Higher hFE (220–450), lower fT (100 MHz), same SOT23 packageBetter for DC/low-frequency switching; insufficient fT for FM band amplificationSelect only if operating below 30 MHz or requiring higher DC gain with relaxed RF performance.
MMBT3906LT1GSame VCEO/IC, fT = 250 MHz (typ), Cre = 4.0 pFHigher feedback capacitance degrades stability above 50 MHz; requires neutralization in FM stagesAcceptable for cost-sensitive non-FM applications where layout allows external compensation.

Compared with BC856B,215 and MMBT3906LT1G, the BF824,235 uniquely balances fT > 400 MHz, Cre < 0.3 pF, and −30 V rating - making it the only drop-in solution for uncompensated, high-isolation FM front-end amplifiers in space-constrained designs.

Availability

BF824,235 is available at Aetrix Electronics and suitable for FM radio front-ends, portable audio receiver IF stages, and wireless microphone transmitter buffers requiring stable component supply and consistent RF performance across production batches.

Supply support for BF824,235 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, spun off from NXP in 2017 and focused on automotive, industrial, computing, and consumer markets.

The BF824,235 belongs to Nexperia's RF bipolar transistor product line, engineered specifically for high-isolation, medium-frequency amplification in compact FM and wireless audio systems.

FAQ

Is BF824,235 suitable for common-emitter RF amplifier configurations?

No - the BF824,235 is characterized and optimized for common-base operation, where its low Cre and high fT deliver best stability and gain. In common-emitter mode, its Miller capacitance increases significantly, risking oscillation above 50 MHz without neutralization.

What is the maximum recommended PCB copper area for thermal relief on the SOT23 pad?

For FR4 boards, Nexperia specifies Rth(j-a) = 500 K/W with no added copper; adding ≥25 mm² of 1-oz copper connected to the collector pad (Pin 3) reduces Rth(j-a) to ~320 K/W, enabling full 250 mW dissipation at +60 °C ambient.

Does BF824,235 require external bias stabilization for FM front-end use?

Yes - while hFE is stable across current, the −900 mV VBE exhibits −2.2 mV/°C temperature coefficient. A simple emitter resistor (e.g., 100 Ω) provides sufficient negative feedback to hold IC within ±5% over −25 to +70 °C.

Can BF824,235 replace BF199 in legacy FM tuner designs?

No - BF199 is an NPN transistor with different bias polarity, pinout (emitter-collector swap), and higher fT (≥600 MHz). Direct substitution would invert biasing and degrade gain; redesign of base/emitter networks and layout is required.

BF824,235 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
PNP
Current - Collector (Ic) (Max):
25 mA
Voltage - Collector Emitter Breakdown (Max):
30 V
Vce Saturation (Max) @ Ib, Ic:
-
Current - Collector Cutoff (Max):
50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
25 @ 4mA, 10V
Power - Max:
250 mW
Frequency - Transition:
450MHz
Operating Temperature:
150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
TO-236AB

BF824,235 FAQ

1.How can I place an order for BF824,235 through Aetrix?

Please submit a Request for Quotation (RFQ) for BF824,235 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BF824,235 reliable?

The price and inventory of BF824,235 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BF824,235 is usually 5 days.

3.What payment methods are accepted for BF824,235?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BF824,235 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BF824,235?

BF824,235 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BF824,235 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BF824,235?

For technical support, including BF824,235 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BF824,235 requirements.

6.How does Aetrix verify that BF824,235 is sourced from the original manufacturer or authorized distributors?

All BF824,235 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BF824,235 meets industry standards.

7.What is the process for return or replacement of BF824,235?

All BF824,235 units undergo pre-shipment inspection (PSI). If there is an issue with BF824,235, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BF824,235 part is unused and in its original packaging.

Return procedure for BF824,235:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BF824,235 Tags

  • BF824,235
  • BF824,235 PDF
  • BF824,235 Datasheet
  • BF824,235 Specifications
  • BF824,235 Images
  • Nexperia USA Inc.
  • Nexperia USA Inc. BF824,235
  • Buy BF824,235
  • BF824,235 Price
  • BF824,235 Distributor
  • BF824,235 Supplier
  • BF824,235 Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER