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NXP Semiconductors BF904AWR,115

Part No.:
BF904AWR,115
Manufacturer:
NXP Semiconductors
Category:
Single FETs, MOSFETs
Package:
SC-82A, SOT-343
Datasheet:
AetrixBF904AWR,115.pdf
Description:
RF MOSFET 5V CMPAK-4
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,107

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Product details

Overview

BF904AWR from NXP Semiconductors (formerly Philips) is an N-channel dual-gate MOSFET designed for low-noise, high-gain RF amplification in VHF/UHF tuner front-ends. It delivers 25 mS forward transfer admittance, 2.2 pF gate-1 input capacitance, and 2 dB noise figure at 800 MHz, operating at 5 V supply with 30 mA max drain current and 200 mW power dissipation.

For engineers reviewing the BF904AWR datasheet, BF904AWR pinout, BF904AWR application, or BF904AWR equivalent, this device is selected for AGC-stable RF gain control in broadcast tuners, professional comms receivers, and narrowband VHF/UHF signal chains where cross-modulation suppression and low-noise performance up to 1 GHz are critical.

Technical Context

The BF904AWR uses enhancement-mode dual-gate architecture with internally interconnected source and substrate, enabling independent biasing of gate 1 (AGC control) and gate 2 (RF input). Its short-channel design optimizes yfs/Cig1-s ratio for wideband gain stability under varying AGC voltage.

It features built-in bias circuitry ensuring consistent cross-modulation performance during automatic gain control, with gate-1 threshold voltage between 0.3 V and 1.0 V and gate-2 breakdown voltage rated at 6–15 V - supporting robust operation in 3–7 V supply systems typical of TV tuner modules.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 7 V maximum - defines safe drain-source voltage swing in 5 V supply designs, limiting headroom for RF envelope peaks.
|yfs| 25 mS typical - determines small-signal transconductance and achievable gain per stage in RF amplifier layouts.
Cig1-s 2.2 pF typical - sets input impedance and matching network complexity at gate 1, critical for AGC loop bandwidth.
F 2 dB at 800 MHz - quantifies minimum added noise in UHF receiver LNA stages, directly impacting system sensitivity.
Ptot 200 mW at Ts ≤ 110 °C - constrains thermal design in compact SMT tuner modules; requires controlled solder-point temperature.
VG1-S(th) 0.3–1.0 V - enables low-voltage AGC control down to near-zero volts, supporting analog gain reduction without cutoff.
Tj 150 °C maximum - defines junction temperature limit for reliability in sealed tuner enclosures with limited airflow.

Pinout & Package

SOT343R plastic surface-mount package (4-lead, reverse pinning), measuring 2.2 × 1.8 × 0.9 mm, optimized for high-frequency layout with minimized lead inductance and controlled parasitic capacitance.

Pin/Terminal Circuit Role Design Meaning
1 Drain Main RF output node; connects to tuned load or next-stage input; requires impedance-matched trace routing.
2 Source Common reference for both gates and drain; must be low-inductance RF ground for stable bias and noise performance.
4 Gate 2 RF input terminal; biased at ~4 V for optimal gain/noise trade-off; isolated from AGC path to prevent feedthrough.
3 Gate 1 AGC control terminal; voltage-variable gain adjustment port; sensitive to leakage (<50 nA cutoff current).

Key Features

Feature Design Value
Dual-gate AGC architecture Enables >40 dB gain reduction range (Fig.6) while maintaining <−110 dBV cross-modulation distortion (Fig.7) at 50 MHz.
Low-noise UHF operation 2 dB noise figure at 800 MHz supports high-sensitivity reception in digital terrestrial TV (DTT) and PMR receivers.
High yfs/Cig1-s ratio ~11.4 mS/pF typical - improves gain-bandwidth product and reduces matching component count in 50 Ω systems.
5 V supply optimization Specified performance (gain, noise, linearity) validated at VDS = 5 V, VG2-S = 4 V, ID = 10 mA - matches standard tuner rail voltages.
SOT343R RF-optimized package Reverse pinning (2-1-4-3 top view) minimizes bond wire asymmetry; 0.25 mm pitch aids dense tuner module layout.

Applications

Television Tuner Front-End Professional UHF Receiver

Use Scenario: First-stage RF amplifier in analog/digital terrestrial TV tuners (47–862 MHz), handling weak off-air signals with variable channel spacing.

IC Role / Device Role / Timing Role: Dual-gate MOSFET providing AGC-controlled low-noise amplification; gate 2 receives antenna signal, gate 1 accepts DC AGC voltage.

Use Value: Maintains constant output level across 60 dB input dynamic range while holding cross-modulation below −110 dBV (Fig.7), preventing adjacent-channel interference.

Use Scenario: IF or RF preamplifier in portable UHF land-mobile radios (400–520 MHz), operating from battery-powered 5 V rails with thermal constraints.

IC Role / Device Role / Timing Role: Low-noise gain block with integrated AGC interface; enables automatic signal-level adaptation without external attenuators or switches.

Use Value: Delivers 25 mS transconductance and 2 dB NF at 450 MHz, extending usable range by ≥3 dB over single-gate alternatives in field-deployed equipment.

VHF Broadcast Monitoring Lab-Grade Signal Generator Output Stage

Use Scenario: Wideband VHF amplifier (30–300 MHz) in spectrum monitoring receivers requiring flat gain and minimal intermodulation.

IC Role / Device Role / Timing Role: Fixed-gain RF amplifier with gate 2 biased for linearity; gate 1 grounded or decoupled for stable operation.

Use Value: Achieves <−35 dBc two-tone IMD3 at +10 dBm output (inferred from Crss = 35 fF and yfs linearity data), supporting accurate signal analysis.

Use Scenario: Final gain stage in benchtop RF signal generators (100–1000 MHz), driving 50 Ω loads with calibrated output power.

IC Role / Device Role / Timing Role: Buffered RF amplifier with precise gain control via gate 1; used in closed-loop amplitude regulation circuits.

Use Value: Enables 0.1 dB gain resolution over 30 dB range using analog AGC voltage (Fig.6), improving output level accuracy and repeatability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-gate MOSFET amplifier applications.

Alternative Part Technical Difference Application Difference Selection Advice
BF998,115 Higher |yfs| (35 mS typ), lower Cig1-s (1.7 pF), SOT343B package (standard pinning) Better gain-bandwidth in 700–1200 MHz bands; less suited for legacy tuner designs using reverse-pin SOT343R footprints Select BF998,115 when upgrading for higher UHF gain or redesigning PCB layout to accommodate standard pinout.
NE3210M04 Single-gate GaAs FET; 0.6 dB NF at 900 MHz; 5 V operation; SOT343 package Lacks dual-gate AGC capability; requires external VGA or PIN diode attenuator for gain control Choose NE3210M04 only when absolute lowest noise is prioritized over integrated AGC, and system-level gain control is already implemented externally.

Compared with BF904AWR, BF998,115 offers higher gain and wider bandwidth but requires PCB layout revision due to pinout change, while NE3210M04 achieves lower noise but eliminates on-chip AGC functionality - making BF904AWR uniquely balanced for cost-sensitive, AGC-integrated VHF/UHF tuner designs.

Availability

BF904AWR is available at Aetrix Electronics and suitable for television tuner modules, professional UHF communications equipment, and VHF broadcast monitoring systems requiring stable component supply and long-term obsolescence management.

Supply support for BF904AWR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors, headquartered in Eindhoven, Netherlands, develops high-performance analog and RF semiconductors for consumer, automotive, and industrial markets, with heritage from Philips Semiconductor.

The BF904AWR belongs to NXP's legacy RF transistor family targeting broadcast and communications front-ends, engineered specifically for AGC-stable, low-noise amplification in 3–7 V VHF/UHF tuner applications.

FAQ

What is the maximum operating frequency of the BF904AWR?

The BF904AWR maintains usable gain and low noise up to 1 GHz, with verified S-parameter data through 3 GHz and noise figure specified at 800 MHz. Its forward transfer admittance remains above 1.3 mS at 2 GHz (Fig.19), confirming RF capability beyond UHF band edges - though optimal amplifier design targets 50–900 MHz per datasheet characterization.

Can the BF904AWR operate from a 3.3 V supply?

The BF904AWR is characterized and optimized for 5 V operation (VDS = 5 V, VG2-S = 4 V), but functional operation is possible at 3.3 V with reduced gain and higher noise figure. Drain current drops to ~5 mA at VDS = 3.3 V (Fig.14), lowering |yfs| and degrading NF beyond datasheet specs - not recommended for production without re-characterization.

What is the pin configuration of the BF904AWR SOT343R package?

The BF904AWR uses SOT343R with reverse pinning: Pin 1 = Drain, Pin 2 = Source, Pin 4 = Gate 2, Pin 3 = Gate 1 (top view, reading left-to-right across the package body). This differs from standard SOT343 (SOT343B) and must be verified against MSB842 mechanical drawing to avoid PCB layout errors.

How does the BF904AWR achieve superior cross-modulation performance during AGC?

The BF904AWR integrates an internal bias circuit that stabilizes gate-2 operating point as gate-1 voltage varies, preventing gain-induced distortion. At 50 MHz, it achieves <−110 dBV unwanted voltage with 40 dB gain reduction (Fig.7), outperforming single-gate MOSFETs by >20 dB in multi-channel interference scenarios common in broadcast environments.

Is the BF904AWR RoHS compliant?

The BF904AWR was released in 1999, predating RoHS legislation (2006). While NXP confirms legacy compliance with lead-free soldering profiles for SOT343R packages, formal RoHS certification documentation is not available. For new designs, verify current status via NXP's product change notifications or contact Aetrix for traceable lot-level compliance data.

BF904AWR,115 Specifications

Product attributes
Attribute value
Manufacturer:
NXP Semiconductors
Series:
-
Package/Case:
SC-82A, SOT-343
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Technology:
MOSFET (Metal Oxide)
Configuration:
N-Channel Dual Gate
Frequency:
200MHz
Gain:
-
Voltage - Test:
5 V
Current Rating (Amps):
30mA
Noise Figure:
1dB
Current - Test:
10 mA
Power - Output:
-
Voltage - Rated:
7 V
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
CMPAK-4

BF904AWR,115 FAQ

1.How can I place an order for BF904AWR,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for BF904AWR,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BF904AWR,115 reliable?

The price and inventory of BF904AWR,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BF904AWR,115 is usually 5 days.

3.What payment methods are accepted for BF904AWR,115?

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BF904AWR,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BF904AWR,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BF904AWR,115?

For technical support, including BF904AWR,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BF904AWR,115 requirements.

6.How does Aetrix verify that BF904AWR,115 is sourced from the original manufacturer or authorized distributors?

All BF904AWR,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BF904AWR,115 meets industry standards.

7.What is the process for return or replacement of BF904AWR,115?

All BF904AWR,115 units undergo pre-shipment inspection (PSI). If there is an issue with BF904AWR,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BF904AWR,115 part is unused and in its original packaging.

Return procedure for BF904AWR,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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