My Inquiry
My Account
NXP Semiconductors BF991,215
- Part No.:
- BF991,215
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- TO-253-4, TO-253AA
- Datasheet:
-
BF991,215.pdf
- Description:
- RF MOSFET 10V SOT143B
- Quantity:
- Payment:
- Shipping:
Inventory:3,415
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
BF991,215 from NXP Semiconductors is an N-channel dual-gate MOSFET in SOT143 package, designed for VHF amplification with 14 mS transfer admittance at 1 kHz, 2.1 pF input capacitance at gate 1, and 1 dB noise figure at 200 MHz. It features integrated back-to-back diodes for gate surge protection and operates up to 20 V drain-source voltage.
For engineers reviewing the BF991,215 datasheet, BF991,215 pinout, BF991,215 application, or BF991,215 equivalent, key selection criteria include dual-gate isolation for tuned RF amplifier stages, low-noise VHF performance, thermal resistance of 460 K/W, and compatibility with ceramic substrate mounting per specification note 1.
Technical Context
The BF991,215 uses a depletion-mode N-channel structure with physically isolated gates (g1 and g2), enabling independent DC biasing and AC signal injection-critical for high-selectivity VHF tuners. Its low feedback capacitance (20 fF) and 1.1 pF output capacitance minimize Miller effect and support stable gain up to 200 MHz.
Gate 2 is typically used as a DC bias control terminal while gate 1 serves as the RF input, leveraging the device's 2.1 pF Cig1-s and 1 pF Cig2-s asymmetry. The interconnected source and substrate configuration simplifies grounding in high-frequency layouts without compromising noise performance.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Drain-source voltage (VDS) | 20 V maximum - defines safe DC operating range for VHF amplifier supply rails |
| Transfer admittance (Yfs) | 14 mS typical at 1 kHz - determines small-signal transconductance and gain capability |
| Noise figure (F) | 1 dB at 200 MHz - enables low-noise front-end amplification in FM/VHF tuner IF stages |
| Input capacitance (Cig1-s) | 2.1 pF at 1 MHz - sets input impedance and matching network design for 30–300 MHz bands |
| Feedback capacitance (Crs) | 20 fF at 1 MHz - ensures minimal reverse transmission and unconditional stability in common-source configurations |
| Thermal resistance (Rth j-a) | 460 K/W in free air - requires careful thermal management on ceramic substrates per spec note 1 |
| Junction temperature (Tj) | 150 °C maximum - constrains continuous power dissipation to 200 mW below 60 °C ambient |
Pinout & Package
BF991,215 is housed in a plastic SOT143 microminiature package with lead pitch of 0.75 mm and overall dimensions 2.8 × 1.4 × 0.9 mm (L × W × H). The source (s) and substrate (b) are internally connected.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Source/substrate (s,b) | Common reference node for both gates and drain; must be grounded at RF via low-inductance path |
| 2 | Drain (d) | RF output node; connects to tuned load or next stage; requires DC blocking and RF decoupling |
| 3 | Gate 2 (g2) | DC bias control terminal; sets operating point and influences transconductance and noise |
| 4 | Gate 1 (g1) | Primary RF input terminal; isolated from g2 to prevent signal coupling and enable cascode-like operation |
Key Features
| Feature | Design Value |
|---|---|
| Integrated back-to-back gate-source diodes | Protects g1 and g2 against ESD and input voltage surges without external clamping components |
| Dual-gate architecture with isolated terminals | Enables independent DC biasing of g2 and RF signal injection at g1 for optimized noise/gain trade-off |
| Low feedback capacitance (20 fF) | Reduces risk of oscillation in broadband VHF amplifiers and supports unconditional stability |
| 1 dB noise figure at 200 MHz | Meets stringent sensitivity requirements in professional VHF communication receivers and TV tuners |
| SOT143 package with source-substrate tie | Minimizes parasitic inductance for RF grounding and improves high-frequency layout reproducibility |
Applications
| VHF Television Tuner Front-End | FM Radio Receiver LNA |
|---|---|
Use Scenario: First-stage RF amplification in analog/digital terrestrial TV tuners operating at 47–862 MHz. IC Role / Device Role / Timing Role: Dual-gate MOSFET configured as common-source amplifier with g2 biased for optimal noise figure and g1 receiving antenna signal. Use Value: Achieves 1 dB NF and 26 dB transducer gain at 200 MHz, directly supporting channel selectivity and weak-signal reception. | Use Scenario: Low-noise amplification in portable and automotive FM radio receivers (87.5–108 MHz). IC Role / Device Role / Timing Role: RF front-end transistor with g2 used for AGC voltage control and g1 as signal input. Use Value: Enables stable 29 dB gain at 100 MHz and maintains sub-1 dB noise figure under varying supply conditions. |
| Professional VHF Communication Receiver | VHF/UHF Spectrum Analyzer Input Stage |
Use Scenario: High-dynamic-range amplification in land-mobile radio base stations and repeaters (136–174 MHz). IC Role / Device Role / Timing Role: Dual-gate device operated with g2 for precise gain control and g1 for low-distortion signal amplification. Use Value: Delivers 20 mA IDSS and 20 V VDS rating, supporting robust operation in wide-temperature industrial environments. | Use Scenario: Input buffer amplifier in handheld spectrum analyzers requiring flat frequency response and minimal added noise. IC Role / Device Role / Timing Role: Common-source amplifier with matched input/output capacitance (2.1 pF / 1.1 pF) for broadband impedance control. Use Value: Provides 20 fF Crs and 460 K/W Rth j-a, enabling accurate amplitude measurement across VHF band without thermal drift. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-gate MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BF992,215 | Higher IDSS (6–30 mA vs. 4–25 mA); identical pinout and package | Better suited for higher-gain VHF amplifier designs requiring increased bias current headroom | Select BF992,215 when transducer gain >29 dB at 100 MHz is required and thermal margin allows |
| MRF901 | Single-gate N-channel MOSFET; no g2 control; higher Ptot (300 mW); TO-92 package | Lacks dual-gate noise optimization; used in cost-sensitive consumer FM modules where AGC not needed | Choose MRF901 only for non-critical, single-stage amplifiers where layout simplicity outweighs noise performance |
Compared with BF991,215, BF992,215 offers higher gain potential but similar noise and thermal behavior, while MRF901 sacrifices dual-gate advantages for lower cost and higher power handling in less demanding applications.
Availability
BF991,215 is available at Aetrix Electronics and suitable for VHF television tuners, FM radio receivers, and professional communication equipment requiring stable component supply and long-term obsolescence management.
Supply support for BF991,215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in high-performance analog, RF, and mixed-signal solutions for automotive, industrial, and communications markets.
The BF991,215 belongs to NXP's legacy RF transistor product line, engineered specifically for low-noise, high-selectivity VHF amplification in broadcast and professional radio systems.
FAQ
What is the maximum drain-source voltage rating for BF991,215?
The BF991,215 has a maximum drain-source voltage (VDS) rating of 20 V, as specified in the Absolute Maximum Ratings table. This limit applies under all operating conditions and must not be exceeded to prevent permanent device damage. Operation near this limit requires verification of power dissipation and thermal derating per the 460 K/W junction-to-ambient thermal resistance curve.
How does the dual-gate structure of BF991,215 improve VHF amplifier performance?
The BF991,215 dual-gate structure isolates RF input (g1) from DC bias control (g2), reducing Miller feedback and enabling independent optimization of noise figure and gain. This architecture achieves 1 dB noise figure at 200 MHz and 26 dB transducer gain-key for high-sensitivity VHF tuners where single-gate devices exhibit higher instability and degraded NF.
Is BF991,215 compatible with standard SOT143 footprint layouts?
Yes, BF991,215 uses the standardized SOT143 package with 0.75 mm lead pitch and 2.8 mm × 1.4 mm body dimensions. Its pin 1 (source/substrate), pin 2 (drain), pin 3 (g2), and pin 4 (g1) assignment matches JEDEC MO-178, ensuring mechanical and soldering compatibility with existing SOT143 PCB footprints and reflow profiles.
What is the typical noise figure of BF991,215 at 100 MHz?
The BF991,215 delivers a typical noise figure of 0.7 dB at 100 MHz under specified test conditions (GS = 1 mS, BS = BSopt, ID = 10 mA, VDS = 10 V, VG2-S = 4 V). This value is confirmed in the Dynamic Characteristics table and reflects its suitability for high-fidelity FM receiver front-ends where sub-1 dB NF is critical.
Does BF991,215 require external ESD protection?
No, BF991,215 integrates back-to-back diodes between each gate and source, providing inherent protection against input voltage surges and electrostatic discharge. This eliminates the need for external gate protection diodes in most VHF tuner designs, simplifying circuit layout and reducing component count without compromising reliability.
BF991,215 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- TO-253-4, TO-253AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N-Channel Dual Gate
- Frequency:
- 100MHz
- Gain:
- 29dB
- Voltage - Test:
- 10 V
- Current Rating (Amps):
- 20mA
- Noise Figure:
- 0.7dB
- Current - Test:
- 10 mA
- Power - Output:
- -
- Voltage - Rated:
- 20 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-143B
BF991,215 FAQ
1.How can I place an order for BF991,215 through Aetrix?
Please submit a Request for Quotation (RFQ) for BF991,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BF991,215 reliable?
The price and inventory of BF991,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BF991,215 is usually 5 days.
3.What payment methods are accepted for BF991,215?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BF991,215 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BF991,215?
BF991,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BF991,215 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BF991,215?
For technical support, including BF991,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BF991,215 requirements.
6.How does Aetrix verify that BF991,215 is sourced from the original manufacturer or authorized distributors?
All BF991,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BF991,215 meets industry standards.
7.What is the process for return or replacement of BF991,215?
All BF991,215 units undergo pre-shipment inspection (PSI). If there is an issue with BF991,215, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BF991,215 part is unused and in its original packaging.
Return procedure for BF991,215:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BF991,215 Tags
-
3SK294(TE85L,F)
Toshiba Semiconductor and Storage
-
SAV-551+
Mini-Circuits
-
TAV2-501+
Mini-Circuits
-
CE3514M4-C2
CEL
-
AFT05MS004NT1
NXP USA Inc.
-
SAV-541+
Mini-Circuits
-
CE3512K2-C1
CEL
-
AFM907NT1
NXP Semiconductors
-
SKY65050-372LF
Skyworks Solutions Inc.
-
CE3520K3-C1
CEL
-
AFT09MS007NT1
NXP USA Inc.
-
AFT09MS015NT1
NXP USA Inc.
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
