NXP Semiconductors BF992,215

Overview

BF992,215 from NXP Semiconductors is a silicon N-channel dual-gate MOSFET in SOT143B package, designed for VHF amplification with 25 mS forward transfer admittance at 1 kHz, 4 pF gate-1 input capacitance, and 1.2 dB noise figure at 200 MHz - deployed in 12 V FM/VHF TV tuners and professional communications receivers.

For engineers reviewing the BF992,215 datasheet, BF992,215 pinout, BF992,215 application, or BF992,215 equivalent, key selection criteria include dual-gate isolation for AGC control, low-noise VHF gain staging, gate protection diodes, and thermal derating above 60 °C ambient.

Technical Context

This depletion-mode MOSFET features independently biased gates: Gate 1 (g1) serves as signal input with high impedance and low C_ig1-s (4 pF), while Gate 2 (g2) acts as gain-control terminal with cut-off voltage −V_PG2-S = 0.2–1.1 V and lower input capacitance (1.7 pF).

Integrated back-to-back diodes between each gate and source protect against ESD and input overvoltage surges; operation requires V_DS ≤ 20 V, I_D ≤ 40 mA, and junction temperature limited to 150 °C with 460 K/W thermal resistance in free air.

Key Specifications

Pinout & Package

Package: SOT143B - plastic surface-mounted 4-lead micro-miniature package (3.0 × 1.4 × 1.1 mm), mounted on 8 mm × 10 mm × 0.7 mm ceramic substrate per thermal spec.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-gate MOSFET amplifier applications.

Compared with BF992,215, BF994,215 trades input capacitance for higher gain, while BF981,215 sacrifices transconductance to achieve lower noise - enabling designers to select based on whether gain-bandwidth, noise floor, or bias stability is the dominant system constraint.

Availability

BF992,215 is available at Aetrix Electronics and suitable for VHF television tuners, FM radio receivers, and professional communications equipment requiring stable component supply across extended production lifecycles.

Supply support for BF992,215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in high-performance analog, RF, and mixed-signal solutions for consumer, automotive, and industrial markets.

The BF992,215 belongs to NXP's legacy RF transistor product line, engineered specifically for low-noise, high-gain VHF amplification in broadcast and communications tuners with dual-gate architecture and integrated ESD protection.

FAQ

What is the maximum drain-source voltage rating for the BF992,215?

The BF992,215 has a maximum drain-source voltage (V_DS) rating of 20 V DC under all operating conditions. This limit must not be exceeded to prevent permanent device damage, and design margins should account for transient spikes and ripple in 12 V supply rails used in VHF tuner applications. The BF992,215 is rated per IEC 134 Absolute Maximum Ratings.

How is gate protection implemented in the BF992,215?

The BF992,215 integrates back-to-back diodes between each gate (g1 and g2) and the source terminal (s,b), providing inherent ±7 V input surge protection without external components. This design protects against ESD events during handling and voltage transients in tuner front-end circuits. The BF992,215 datasheet confirms this protection is built into the die structure.

Can the BF992,215 operate with Gate 2 grounded?

Yes, the BF992,215 can operate with Gate 2 (g2) grounded, resulting in a fixed-gain configuration optimized for stability and broadband use. With g2 at 0 V, the device maintains usable |y_fs| (~18 mS) and low noise, making it suitable for FM radio amplifiers where AGC is not required. The BF992,215 transfer curves confirm functional operation across VG2-S = 0–5 V.

What thermal derating applies to the BF992,215 above 60 °C ambient?

The BF992,215 has a total power dissipation limit of 200 mW at T_amb ≤ 60 °C, derating linearly to zero at 150 °C per the published curve. Its R_{th j-a} is 460 K/W on a specified 8 mm × 10 mm × 0.7 mm ceramic substrate. For reliable operation, the BF992,215 must be mounted per this thermal footprint or heat-sinked accordingly.

Is the BF992,215 pin-compatible with other SOT143B dual-gate MOSFETs?

Yes, the BF992,215 shares the SOT143B package and identical pinout (1=s,b, 2=d, 3=g2, 4=g1) with BF994,215 and BF981,215, enabling direct PCB substitution where thermal and electrical specs align. However, differences in y_fs, noise figure, and capacitance require circuit re-optimization. The BF992,215 pin mapping is confirmed in its official NXP datasheet Rev. 04.