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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs

NXP Semiconductors BF994S,215

Name: BF994S,215
Brand: NXP Semiconductors
SKU: BF994S,215
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BF994S,215

Manufacturer:: NXP Semiconductors

Category:: Single FETs, MOSFETs

Package:: TO-253-4, TO-253AA

Datasheet:: BF994S,215.pdf

Description:: RF MOSFET 15V SOT143B

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BF994S,215 from NXP Semiconductors is an N-channel depletion-mode dual-gate MOSFET in SOT143B package, rated for 20 V drain-source voltage, 30 mA DC drain current, and 200 mW power dissipation at ≤60 °C ambient. It delivers 18 mS typical transfer admittance, 2.5 pF gate-1 input capacitance, and 1 dB noise figure at 200 MHz-optimized for VHF amplifier stages in TV tuners and professional RF receivers.

For engineers reviewing the BF994S,215 datasheet, BF994S,215 pinout, BF994S,215 application, or BF994S,215 equivalent, key selection considerations include its dual-gate VHF gain control capability, integrated back-to-back gate protection diodes, low feedback capacitance (25 fF), and thermal resistance of 460 K/W in free air-critical for stable small-signal RF amplification under constrained board space.

Technical Context

The BF994S,215 operates as a common-source RF amplifier with independent gate biasing: Gate 1 controls transconductance and signal input, while Gate 2 sets DC operating point and provides isolation between input and output. Its depletion-mode structure enables zero-bias operation and high input impedance at gate 1.

Designed for VHF band operation up to 200 MHz, it achieves 25 dB typical power gain and 1 dB noise figure under matched conditions (GS = 2 mS, BS = BSopt). The integrated back-to-back diodes between each gate and source protect against ±10 mA surge currents without external clamping.

Key Specifications

Parameter	Value and Actual Design Meaning
Drain-source voltage (V_DS)	20 V max - defines maximum RF signal swing and DC bias headroom before breakdown.
Drain current (I_D)	30 mA max - sets upper limit for quiescent bias and RF output power capability.
Transfer admittance (Y_fs)	18 mS typ - directly determines small-signal voltage gain in common-source configuration.
Noise figure (F)	1 dB at 200 MHz - enables high-sensitivity front-end amplification in VHF receiver chains.
Input capacitance (C_ig1-s)	2.5 pF typ - minimizes Miller effect and maintains input impedance stability up to VHF.
Feedback capacitance (C_rs)	25 fF typ - ensures unconditional stability and reduces risk of oscillation in tuned amplifiers.
Thermal resistance (R_{th j-a})	460 K/W - requires careful thermal management on PCBs without heatsinking above 60 °C ambient.

Pinout & Package

Package: SOT143B - plastic surface-mounted 4-lead microminiature package with interconnected source and substrate; dimensions per IEC JEDEC outline (D = 2.8–3.0 mm, E = 1.2–1.4 mm, body height ≤1.1 mm).

Pin/Terminal	Circuit Role	Design Meaning
1 (s, b)	Source and substrate connection	Common reference node for both gates and drain; internally tied to substrate for RF grounding and bias stability.
2 (d)	Drain	RF output node; connected to collector load or tuned circuit; carries full RF current and DC bias.
3 (g2)	Gate 2	DC bias control terminal; sets operating point and channel conductivity without affecting RF input path.
4 (g1)	Gate 1	RF signal input terminal; high-impedance node with low C_ig1-s for minimal loading of preceding stage.

Key Features

Feature	Design Value
Dual-gate architecture with isolated control paths	Enables independent DC bias (G2) and RF signal injection (G1), eliminating need for external coupling capacitors or bias tees.
Integrated back-to-back gate-source diodes	Clamps transient overvoltage on either gate to ±0.7 V, protecting against ESD and tuning voltage surges without discrete components.
Low feedback capacitance (25 fF)	Reduces internal signal coupling from drain to gate 1, enabling stable >200 MHz operation without neutralization networks.
Depletion-mode operation	Permits zero-gate-voltage biasing for simple single-supply designs and fast turn-on response in RF switching applications.
Matched VHF noise and gain performance	1 dB NF and 25 dB G_p at 200 MHz allow direct use in first IF or tuner RF amplifier stages without cascading.

Applications

VHF Television Tuner Front-End	Professional VHF Receiver Amplifier
Use Scenario: First-stage RF amplification in analog/digital terrestrial TV tuners operating 47–862 MHz. IC Role / Device Role / Timing Role: Dual-gate MOSFET configured as common-source amplifier with G2 biased for optimal noise figure and G1 receiving antenna signal. Use Value: 1 dB noise figure and 25 dB power gain enable high SNR reception with minimal added noise before mixer stage.	Use Scenario: Low-noise preamplifier in portable VHF communication receivers (e.g., land mobile radio, marine band). IC Role / Device Role / Timing Role: Signal-conditioning amplifier between antenna matching network and downconversion mixer. Use Value: Integrated gate protection diodes withstand antenna static discharge, reducing need for external TVS components.
VHF Signal Generator Output Stage	RF Test Equipment Buffer Amplifier
Use Scenario: Final gain stage in benchtop VHF signal generators delivering calibrated output up to +10 dBm. IC Role / Device Role / Timing Role: Linear Class-A amplifier with fixed G2 bias and AC-coupled G1 input for flat frequency response. Use Value: 200 mW power dissipation rating supports continuous operation at 15 V/10 mA bias without thermal derating below 60 °C.	Use Scenario: Isolation buffer between RF source and DUT in automated test systems requiring repeatable 50 Ω drive. IC Role / Device Role / Timing Role: Impedance-matching amplifier with G1 driven by signal source and G2 set for unity gain stability. Use Value: 25 fF feedback capacitance ensures unconditional stability across 100–300 MHz sweep range without external compensation.

VHF Television Tuner Front-End

Professional VHF Receiver Amplifier

Use Scenario: First-stage RF amplification in analog/digital terrestrial TV tuners operating 47–862 MHz.

IC Role / Device Role / Timing Role: Dual-gate MOSFET configured as common-source amplifier with G2 biased for optimal noise figure and G1 receiving antenna signal.

Use Value: 1 dB noise figure and 25 dB power gain enable high SNR reception with minimal added noise before mixer stage.

Use Scenario: Low-noise preamplifier in portable VHF communication receivers (e.g., land mobile radio, marine band).

IC Role / Device Role / Timing Role: Signal-conditioning amplifier between antenna matching network and downconversion mixer.

Use Value: Integrated gate protection diodes withstand antenna static discharge, reducing need for external TVS components.

VHF Signal Generator Output Stage

RF Test Equipment Buffer Amplifier

Use Scenario: Final gain stage in benchtop VHF signal generators delivering calibrated output up to +10 dBm.

IC Role / Device Role / Timing Role: Linear Class-A amplifier with fixed G2 bias and AC-coupled G1 input for flat frequency response.

Use Value: 200 mW power dissipation rating supports continuous operation at 15 V/10 mA bias without thermal derating below 60 °C.

Use Scenario: Isolation buffer between RF source and DUT in automated test systems requiring repeatable 50 Ω drive.

IC Role / Device Role / Timing Role: Impedance-matching amplifier with G1 driven by signal source and G2 set for unity gain stability.

Use Value: 25 fF feedback capacitance ensures unconditional stability across 100–300 MHz sweep range without external compensation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-gate VHF MOSFET amplifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BF998,215	Higher Y_fs (22 mS typ), lower C_ig1-s (1.8 pF), same SOT143B package and pinout.	Better gain and bandwidth margin for 300–500 MHz extensions; identical layout compatibility.	Select BF998,215 when higher transconductance and extended upper-frequency response are required without PCB redesign.
2SK170-Y	JFET (not MOSFET), single-gate, TO-92 package, 12 V V_DS, no integrated gate protection diodes.	Limited to lower-voltage, lower-frequency (<100 MHz) audio/RF preamp roles; requires external ESD protection.	Choose 2SK170-Y only for cost-sensitive, non-VHF, through-hole designs where gate protection and dual-gate control are not needed.

Compared with BF994S,215, BF998,215 offers higher gain and bandwidth in identical packaging, while 2SK170-Y provides a lower-cost JFET alternative for non-VHF, non-dual-gate applications-but neither is pin-compatible nor functionally interchangeable without circuit revalidation.

Availability

BF994S,215 is available at Aetrix Electronics and suitable for VHF television tuners, professional communication receivers, and RF test equipment requiring stable component supply and long-lifecycle support for legacy analog RF designs.

Supply support for BF994S,215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global leader in high-performance RF, analog, and mixed-signal semiconductors, with deep expertise in silicon-based RF transistor design and automotive-grade reliability.

The BF994S,215 belongs to NXP's legacy VHF discrete MOSFET product line, engineered specifically for low-noise, high-gain amplification in broadcast and professional radio frequency equipment operating up to 200 MHz.

FAQ

What is the maximum operating frequency supported by the BF994S,215?

The BF994S,215 is characterized for stable small-signal amplification up to 200 MHz, with verified 1 dB noise figure and 25 dB power gain at that frequency. While usable beyond 200 MHz, gain rolls off and noise figure increases; design validation is required above this point. The BF994S,215 datasheet specifies performance only up to 200 MHz under standard test conditions.

Does the BF994S,215 require external gate protection diodes?

No-the BF994S,215 integrates back-to-back diodes between each gate and source, providing inherent protection against ±10 mA surge currents and ±20 V gate-source breakdown. This eliminates the need for external clamping diodes in typical VHF tuner and receiver applications where antenna static or tuning voltage transients occur.

Can the BF994S,215 be used in a single-gate configuration?

Yes-the BF994S,215 can operate with Gate 2 shorted to Source (pin 1) to function as a single-gate MOSFET, though transconductance and noise performance degrade versus dual-gate biasing. In this mode, Gate 1 (pin 4) serves as the sole input, and the device retains its 18 mS Y_fs and 2.5 pF C_ig1-s specifications per the datasheet.

What is the thermal derating behavior of the BF994S,215 above 60 °C ambient?

The BF994S,215 has a total power dissipation limit of 200 mW up to 60 °C ambient; above that, power must be linearly derated at 4.35 mW/°C (based on R_{th j-a} = 460 K/W). At 100 °C ambient, maximum allowable P_tot drops to ~26 mW-requiring reduced bias current or active cooling in high-temperature environments.

Is the BF994S,215 suitable for automotive applications?

No-the BF994S,215 is not automotive-qualified. Per NXP's datasheet disclaimers, it lacks AEC-Q101 qualification, automotive temperature range (-40 to +125 °C), and automotive-specific reliability testing. Its specified operating ambient range is limited to -65 to +150 °C storage, but recommended use is within commercial/industrial conditions.

BF994S,215 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: -

Package/Case:: TO-253-4, TO-253AA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Technology:: MOSFET (Metal Oxide)

Configuration:: N-Channel Dual Gate

Frequency:: 200MHz

Gain:: 25dB

Voltage - Test:: 15 V

Current Rating (Amps):: 30mA

Noise Figure:: 1dB

Current - Test:: 10 mA

Power - Output:: -

Voltage - Rated:: 20 V

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-143B

BF994S,215 FAQ

1.How can I place an order for BF994S,215 through Aetrix?

Please submit a Request for Quotation (RFQ) for BF994S,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BF994S,215 reliable?

The price and inventory of BF994S,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BF994S,215 is usually 5 days.

3.What payment methods are accepted for BF994S,215?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BF994S,215 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BF994S,215?

BF994S,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BF994S,215 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BF994S,215?

For technical support, including BF994S,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BF994S,215 requirements.

6.How does Aetrix verify that BF994S,215 is sourced from the original manufacturer or authorized distributors?

All BF994S,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BF994S,215 meets industry standards.

7.What is the process for return or replacement of BF994S,215?

All BF994S,215 units undergo pre-shipment inspection (PSI). If there is an issue with BF994S,215, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BF994S,215 part is unused and in its original packaging.

Return procedure for BF994S,215:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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