NXP Semiconductors BF996S,215

Overview

BF996S,215 from NXP Semiconductors is an N-channel depletion-mode dual-gate MOSFET in SOT143B package, rated for 20 V drain-source voltage, 30 mA drain current, and 200 mW power dissipation at ≤60 °C ambient. It delivers 18 mS transfer admittance, 2.3 pF gate-1 input capacitance, and 1 dB noise figure at 200 MHz-optimized for UHF TV tuners and professional RF front-ends.

For engineers reviewing the BF996S,215 datasheet, BF996S,215 pinout, BF996S,215 application, or BF996S,215 equivalent, key selection criteria include dual-gate isolation, low-noise RF amplification capability, gate protection diodes, and SOT143B thermal performance under 200 MHz to 800 MHz operation.

Technical Context

The BF996S,215 operates as a common-source RF amplifier with independent gate control: Gate 1 (g1) serves as signal input, Gate 2 (g2) as bias/control terminal. Its depletion-mode structure enables zero-bias operation, while integrated back-to-back gate–source diodes protect against input voltage surges.

Dynamic performance is specified at ID = 10 mA, VDS = 15 V, VG2–S = 4 V: it achieves 25 dB power gain at 200 MHz and 18 dB at 800 MHz, with 25 fF feedback capacitance and 0.8 pF output capacitance-enabling stable high-frequency amplification with minimal Miller effect.

Key Specifications

Pinout & Package

Package: SOT143B - plastic surface-mounted 4-lead microminiature package with interconnected source and substrate; dimensions per IEC JEDEC outline (D = 2.8–3.0 mm, E = 1.2–1.4 mm, A = 0.9–1.1 mm).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-gate MOSFET RF amplifier applications.

Compared with BF996S,215, BF998,215 offers enhanced high-frequency gain and reduced input capacitance but shares identical footprint and bias architecture; MRF901 provides greater power handling in TO-92 but lacks gate protection and surface-mount compatibility.

Availability

BF996S,215 is available at Aetrix Electronics and suitable for UHF television tuners, professional two-way radios, and RF test equipment requiring stable component supply and long-lifecycle support.

Supply support for BF996S,215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader delivering high-performance mixed-signal and standard products, with deep expertise in RF, analog, and power management technologies.

The BF996S,215 belongs to NXP's legacy RF transistor product line, engineered specifically for low-noise, dual-gate amplification in UHF consumer and professional wireless equipment.

FAQ

What is the maximum drain-source voltage rating for BF996S,215?

The BF996S,215 has a maximum drain-source voltage (V_DS) rating of 20 V, as specified in its Absolute Maximum Ratings table. This value defines the upper limit for DC or peak RF voltage applied between drain and source terminals. Exceeding this rating risks permanent device failure. The BF996S,215 must be operated within this constraint in all applications, including UHF TV tuners and professional radio front-ends.

Does BF996S,215 include built-in protection against input voltage surges?

Yes, the BF996S,215 integrates back-to-back diodes between each gate and the source terminal, as confirmed in its Features section. This protection clamps transient overvoltages on Gate 1 or Gate 2 without requiring external components. The BF996S,215 thus enhances reliability in RF tuner inputs exposed to ESD or antenna coupling events, particularly in consumer-grade UHF television systems.

What is the typical noise figure of BF996S,215 and at what frequency is it measured?

The BF996S,215 exhibits a typical noise figure (F) of 1 dB at 200 MHz, measured under conditions of GS = 2 mS, BS = BSopt, ID = 10 mA, VDS = 15 V, and VG2–S = 4 V. At 800 MHz, the noise figure rises to 1.8 dB. This performance makes the BF996S,215 suitable for low-noise amplification in UHF receiver front-ends where sensitivity is critical.

Is BF996S,215 a depletion-mode or enhancement-mode MOSFET?

The BF996S,215 is a depletion-mode N-channel dual-gate MOSFET, as explicitly stated in its Description section. It conducts drain current (IDSS = 4–20 mA) with zero gate-source voltage applied, enabling self-biasing configurations. This characteristic simplifies bias network design in RF amplifiers and distinguishes the BF996S,215 from enhancement-mode alternatives requiring positive gate drive.

What package type does BF996S,215 use and what are its key mechanical features?

The BF996S,215 uses the SOT143B surface-mount package-a 4-lead plastic microminiature outline with dimensions D ≈ 2.9 mm, E ≈ 1.3 mm, and A ≈ 1.0 mm. Its leads are coplanar, and the source (pin 1) is internally bonded to the substrate. The BF996S,215's thermal resistance (R_{th j-a}) is 460 K/W in free air when mounted on an 8 × 10 × 0.7 mm ceramic substrate, per datasheet note.