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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs

NXP Semiconductors BF998,215

Name: BF998,215
Brand: NXP Semiconductors
SKU: BF998,215
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BF998,215

Manufacturer:: NXP Semiconductors

Category:: Single FETs, MOSFETs

Package:: TO-253-4, TO-253AA

Datasheet:: BF998,215.pdf

Description:: RF MOSFET 8V SOT143B

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BF998,215 from NXP Semiconductors is a silicon N-channel dual-gate MOSFET in SOT143B package, designed for low-noise RF amplification up to 1 GHz with 24 mS forward transfer admittance, 2.1 pF gate-1 input capacitance, and 1 dB noise figure at 800 MHz. It operates at 12 V supply voltage and is used in VHF/UHF television tuners and professional communications receivers.

For engineers reviewing the BF998,215 datasheet, BF998,215 pinout, BF998,215 application, or BF998,215 equivalent, this page delivers verified electrical parameters, validated SOT143B pin mapping, confirmed VHF/UHF tuner use cases, and two technically documented alternative dual-gate MOSFETs for gain-controlled amplifier designs.

Technical Context

The BF998,215 is a depletion-mode dual-gate MOSFET with source and substrate internally connected, enabling independent gate biasing for automatic gain control (AGC) functionality. Its integrated back-to-back gate-source diodes provide surge protection against input voltage transients.

It exhibits strong frequency-dependent transfer characteristics: |yfs| remains ≥21 mS up to 100 MHz, while Crs is tightly controlled at 25 fF and Cig1-s stays stable at 2.1 pF (typ) across VGS1 variation - critical for broadband impedance matching in 200–800 MHz front-end stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	12 V maximum - sets absolute upper limit for drain-source operating voltage in 12 V supply systems.
I_D	30 mA maximum - defines peak continuous drain current capability under thermal derating constraints.
\|y_fs\|	24 mS typical - determines small-signal voltage gain potential in common-source configuration at RF frequencies.
C_ig1-s	2.1 pF typical - establishes input matching network component values and impacts input return loss below 1 GHz.
F	1 dB at 800 MHz - quantifies minimum added noise in high-frequency receiver LNA stages requiring high sensitivity.
P_tot	200 mW maximum - constrains PCB copper area and thermal pad design for ceramic or FR4 mounting per IEC 134 limits.
T_j	150 °C maximum - defines junction temperature ceiling for reliability assurance in sealed tuner modules.

Pinout & Package

BF998,215 is housed in the SOT143B plastic microminiature surface-mount package (3.0 × 1.4 × 1.1 mm), optimized for VHF/UHF RF layout with short internal lead lengths and grounded substrate connection.

Pin/Terminal	Circuit Role	Design Meaning
1	s, b (source & bulk)	Common reference node for both gates and drain; internally tied to substrate for fixed channel potential and ESD robustness.
2	d (drain)	RF output node; requires DC blocking and impedance-matching network before subsequent mixer or IF stage.
3	g2 (gate 2)	DC bias input for channel conduction control; typically held at fixed 4 V to set quiescent ID and optimize noise/gain trade-off.
4	g1 (gate 1)	RF signal input node; isolated from g2 to enable AGC via variable g1 bias without disturbing g2 operating point.

Key Features

Feature	Design Value
Integrated back-to-back gate-source diodes	Protects g1 and g2 inputs against ±10 mA surge currents during tuning or ESD events without external clamping.
Source-substrate interconnection	Eliminates need for separate bulk biasing; simplifies PCB layout and ensures consistent threshold behavior across temperature.
Low Crs (25 fF)	Minimizes Miller effect at UHF frequencies, preserving stability and enabling wideband amplifier designs without neutralization.
AGC-compatible dual-gate architecture	Allows independent g1 RF input and g2 DC bias control - essential for gain stabilization in TV tuner IF strips and comms receivers.
High yfs/Cig1-s ratio	Delivers superior gain-per-capacitance performance, reducing matching network complexity in compact 200–800 MHz front ends.

Applications

Cable Television Tuner Front End	Professional UHF Transceiver Receiver
Use Scenario: Amplifying weak off-air or cable signals in the 47–862 MHz band prior to mixing in analog/digital TV tuners. IC Role / Device Role / Timing Role: Low-noise RF amplifier (LNA) with AGC capability using g1 for signal-level dependent gain reduction. Use Value: Achieves 1 dB noise figure at 800 MHz and >20 dB gain control range (ΔG_tr = −50 dB at 8 V V_agc), maintaining SNR across varying input levels.	Use Scenario: First-stage amplification in portable or base-station UHF radios (300–900 MHz) where size and noise performance are critical. IC Role / Device Role / Timing Role: Dual-gate gain-controlled preamplifier with g2 biased at 4 V and g1 driven by AGC loop voltage. Use Value: Enables stable 24 mS transconductance and <2.5 pF input capacitance - allowing compact microstrip matching networks on 4-layer RF PCBs.
VHF Aircraft Communication Receiver	FM Radio Tuner IF Amplifier
Use Scenario: Signal conditioning in aviation VHF COM band (118–137 MHz) receivers subject to wide dynamic range and interference. IC Role / Device Role / Timing Role: High-linearity, low-noise amplifier with dual-gate isolation preventing oscillator pulling in superheterodyne architectures. Use Value: Delivers 0.6 dB noise figure at 200 MHz and withstands ±20 V gate breakdown - ensuring robust operation in electrically noisy cockpit environments.	Use Scenario: Intermediate-frequency amplification in FM broadcast tuners (10.7 MHz IF) requiring precise gain setting and minimal distortion. IC Role / Device Role / Timing Role: Gain-controlled IF amplifier leveraging g2 for coarse gain adjustment and g1 for fine-tuning via analog control voltage. Use Value: Provides 21–24 mS forward admittance with <50 nA gate leakage - enabling stable DC-coupled AGC loops without drift over temperature.

Cable Television Tuner Front End

Professional UHF Transceiver Receiver

Use Scenario: Amplifying weak off-air or cable signals in the 47–862 MHz band prior to mixing in analog/digital TV tuners.

IC Role / Device Role / Timing Role: Low-noise RF amplifier (LNA) with AGC capability using g1 for signal-level dependent gain reduction.

Use Value: Achieves 1 dB noise figure at 800 MHz and >20 dB gain control range (ΔG_tr = −50 dB at 8 V V_agc), maintaining SNR across varying input levels.

Use Scenario: First-stage amplification in portable or base-station UHF radios (300–900 MHz) where size and noise performance are critical.

IC Role / Device Role / Timing Role: Dual-gate gain-controlled preamplifier with g2 biased at 4 V and g1 driven by AGC loop voltage.

Use Value: Enables stable 24 mS transconductance and <2.5 pF input capacitance - allowing compact microstrip matching networks on 4-layer RF PCBs.

VHF Aircraft Communication Receiver

FM Radio Tuner IF Amplifier

Use Scenario: Signal conditioning in aviation VHF COM band (118–137 MHz) receivers subject to wide dynamic range and interference.

IC Role / Device Role / Timing Role: High-linearity, low-noise amplifier with dual-gate isolation preventing oscillator pulling in superheterodyne architectures.

Use Value: Delivers 0.6 dB noise figure at 200 MHz and withstands ±20 V gate breakdown - ensuring robust operation in electrically noisy cockpit environments.

Use Scenario: Intermediate-frequency amplification in FM broadcast tuners (10.7 MHz IF) requiring precise gain setting and minimal distortion.

IC Role / Device Role / Timing Role: Gain-controlled IF amplifier leveraging g2 for coarse gain adjustment and g1 for fine-tuning via analog control voltage.

Use Value: Provides 21–24 mS forward admittance with <50 nA gate leakage - enabling stable DC-coupled AGC loops without drift over temperature.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-gate MOSFET amplifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BF994,215	Lower \|yfs\| (15 mS typ), higher Cig1-s (3.5 pF), same SOT143B package and pinout.	Better suited for lower-frequency VHF amplifiers (<300 MHz) where noise is less critical than power handling.	Select when prioritizing cost and thermal margin over 800 MHz noise performance.
MRF901LT1	Single-gate LDMOS, 5 V operation, higher P1dB (+13 dBm), no AGC capability; SO-8 package.	Designed for fixed-gain driver stages, not gain-controlled front ends - requires redesign of bias and matching networks.	Choose only if migrating to 5 V systems and abandoning dual-gate AGC functionality.

Compared with BF998,215, BF994,215 offers reduced RF gain and higher input capacitance but maintains pin compatibility and thermal specs, whereas MRF901LT1 abandons dual-gate architecture entirely - necessitating full circuit rework for AGC implementation.

Availability

BF998,215 is available at Aetrix Electronics and suitable for VHF/UHF television tuners, professional communications receivers, and aircraft radio front ends requiring stable component supply, long-lifecycle support, and traceable sourcing for industrial and broadcast equipment manufacturing.

Supply support for BF998,215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company specializing in high-performance RF, analog, and mixed-signal solutions for automotive, industrial, and consumer applications.

The BF998,215 belongs to NXP's legacy RF transistor product line, engineered specifically for low-noise, gain-controlled amplification in VHF and UHF broadcast and communications equipment.

FAQ

What is the maximum drain-source voltage rating for BF998,215?

The BF998,215 has a maximum drain-source voltage (V_DS) rating of 12 V, as specified in the Absolute Maximum Ratings table. This value is strictly enforced to prevent device breakdown; operation above 12 V risks permanent damage. The BF998,215 is intended for 12 V supply systems such as TV tuners and UHF receivers, and its internal structure is not rated for higher rail voltages. Always observe derating curves in Figure 3 when ambient temperature exceeds 60 °C.

Does BF998,215 support automatic gain control (AGC), and how is it implemented?

Yes, BF998,215 supports AGC through its dual-gate architecture: gate 1 (g1) serves as the RF input terminal, while gate 2 (g2) is biased at a fixed DC voltage (typically 4 V) to set quiescent operating point. Applying a variable control voltage to g1 modulates transconductance and thus gain - demonstrated in Figures 19 and 20 with ΔG_tr up to −50 dB. This enables closed-loop AGC in tuner IF strips without external gain-control ICs, a core function confirmed in the Applications section of the BF998,215 datasheet.

What package type is used for BF998,215, and is it compatible with automated SMT assembly?

The BF998,215 uses the SOT143B plastic microminiature surface-mount package (3.0 × 1.4 × 1.1 mm), fully compliant with JEDEC standards and qualified for reflow soldering per NXP's recommended profiles. Its 4-lead gull-wing footprint supports standard pick-and-place and AOI inspection. Pin 1 is marked with "MOp" laser code, and the device ships in antistatic tape-and-reel - making BF998,215 suitable for high-volume automated assembly in broadcast and communications equipment manufacturing.

How does the noise figure of BF998,215 vary with frequency, and what is its optimal operating condition?

The BF998,215 achieves a noise figure (F) of 0.6 dB at 200 MHz and 1.0 dB at 800 MHz, measured under specified conditions: V_DS = 8 V, I_D = 10 mA, V_G2-S = 4 V, and matched source impedance (B_S = B_Sopt). These values are confirmed in the Dynamic Characteristics table. Optimal noise performance requires careful input matching - the datasheet provides test circuits (Figures 17–18) and recommends source impedances near 50 Ω for 200/800 MHz operation. Deviation from these conditions increases F.

Are the gate terminals of BF998,215 protected against electrostatic discharge (ESD)?

Yes, BF998,215 integrates back-to-back diodes between each gate (g1 and g2) and the source (s,b), providing inherent protection against ESD and input voltage surges up to ±10 mA - explicitly stated in the DESCRIPTION section. However, the device remains sensitive during handling: the datasheet cautions that the gate-source input must be protected against static discharge, and it ships in antistatic packaging. Therefore, while BF998,215 has built-in diode clamping, proper ESD protocols (grounded workstations, ionizers, wrist straps) are still mandatory during PCB assembly and testing.

BF998,215 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: -

Package/Case:: TO-253-4, TO-253AA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Technology:: MOSFET (Metal Oxide)

Configuration:: N-Channel Dual Gate

Frequency:: 200MHz

Gain:: -

Voltage - Test:: 8 V

Current Rating (Amps):: 30mA

Noise Figure:: 0.6dB

Current - Test:: 10 mA

Power - Output:: -

Voltage - Rated:: 12 V

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-143B

BF998,215 FAQ

1.How can I place an order for BF998,215 through Aetrix?

Please submit a Request for Quotation (RFQ) for BF998,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BF998,215 reliable?

The price and inventory of BF998,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BF998,215 is usually 5 days.

3.What payment methods are accepted for BF998,215?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BF998,215 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BF998,215?

BF998,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BF998,215 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BF998,215?

For technical support, including BF998,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BF998,215 requirements.

6.How does Aetrix verify that BF998,215 is sourced from the original manufacturer or authorized distributors?

All BF998,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BF998,215 meets industry standards.

7.What is the process for return or replacement of BF998,215?

All BF998,215 units undergo pre-shipment inspection (PSI). If there is an issue with BF998,215, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BF998,215 part is unused and in its original packaging.

Return procedure for BF998,215:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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